PT86306A - Processo para fabrico de diodo com isolador de oxido misturado - Google Patents

Processo para fabrico de diodo com isolador de oxido misturado

Info

Publication number
PT86306A
PT86306A PT86306A PT8630687A PT86306A PT 86306 A PT86306 A PT 86306A PT 86306 A PT86306 A PT 86306A PT 8630687 A PT8630687 A PT 8630687A PT 86306 A PT86306 A PT 86306A
Authority
PT
Portugal
Prior art keywords
mixed oxide
diode manufacturing
oxide isolator
isolator
diode
Prior art date
Application number
PT86306A
Other languages
English (en)
Other versions
PT86306B (pt
Inventor
David Arthur Furst
Leon Joseph Vieland
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Publication of PT86306A publication Critical patent/PT86306A/pt
Publication of PT86306B publication Critical patent/PT86306B/pt

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Liquid Crystal (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Glass Compositions (AREA)
  • Control Of Motors That Do Not Use Commutators (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
PT86306A 1986-12-08 1987-12-04 Processo para fabrico de diodo com isolador de oxido misturado PT86306B (pt)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US93889086A 1986-12-08 1986-12-08

Publications (2)

Publication Number Publication Date
PT86306A true PT86306A (pt) 1989-01-17
PT86306B PT86306B (pt) 1993-08-31

Family

ID=25472146

Family Applications (1)

Application Number Title Priority Date Filing Date
PT86306A PT86306B (pt) 1986-12-08 1987-12-04 Processo para fabrico de diodo com isolador de oxido misturado

Country Status (7)

Country Link
EP (1) EP0271291B1 (pt)
JP (1) JPH0638526B2 (pt)
KR (1) KR930011475B1 (pt)
CN (1) CN1009602B (pt)
DE (1) DE3786001T2 (pt)
FI (1) FI91575C (pt)
PT (1) PT86306B (pt)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2231200A (en) * 1989-04-28 1990-11-07 Philips Electronic Associated Mim devices, their method of fabrication and display devices incorporating such devices
DE3929847A1 (de) * 1989-09-08 1991-05-08 Ernst Prof Dr Ing Lueder Verfahren zur herstellung eines elektronischen schaltelementes
KR950011960B1 (ko) * 1992-12-28 1995-10-12 오리온전기주식회사 엠아이엠(mim) 다이오드 구조 및 그 제조방법
SG86965A1 (en) * 1993-02-10 2002-03-19 Seiko Epson Corp Nonlinear resistance element, manufacturing fabrication method thereof, and liquid crystal display device
US5861672A (en) * 1993-02-10 1999-01-19 Seiko Epson Corporation Nonlinear resistance element, manufacturing fabrication method thereof, and liquid crystal display device
DE19538128C1 (de) * 1995-10-13 1997-02-27 Lueder Ernst Verfahren zur Herstellung eines elektronischen Schaltelementes
JP2006172159A (ja) * 2004-12-16 2006-06-29 Seiko Epson Corp 電子デバイス製造システム、電子デバイスの製造方法、電子デバイス、並びに電気光学装置
TWI422042B (zh) * 2010-11-26 2014-01-01 Univ Nat Chiao Tung 二極體元件及其製作方法
IT201900007572A1 (it) * 2019-05-30 2020-11-30 Green Arise Ltd Diodo quantistico per trasformare una corrente alternata, in particolare una corrente alternata ad alta frequenza, in una corrente continua.

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE633414A (pt) * 1962-06-18 1900-01-01
FR2505070B1 (fr) * 1981-01-16 1986-04-04 Suwa Seikosha Kk Dispositif non lineaire pour un panneau d'affichage a cristaux liquides et procede de fabrication d'un tel panneau d'affichage
JPS5833221A (ja) * 1981-08-21 1983-02-26 Seiko Epson Corp 液晶表示装置
JPS58176622A (ja) * 1982-04-09 1983-10-17 Seiko Epson Corp 電気光学装置
DE3570782D1 (en) * 1984-01-23 1989-07-06 Energy Conversion Devices Inc Liquid crystal displays operated by amorphous silicon alloy diodes
JPS60246686A (ja) * 1984-05-22 1985-12-06 Seiko Epson Corp 薄膜非線形抵抗素子
EP0214227A1 (en) * 1985-02-25 1987-03-18 AT&T Corp. Temperature compensation in active substrate electro-optic displays

Also Published As

Publication number Publication date
JPH0638526B2 (ja) 1994-05-18
DE3786001T2 (de) 1993-11-18
EP0271291B1 (en) 1993-05-26
JPS63160286A (ja) 1988-07-04
KR930011475B1 (ko) 1993-12-08
FI91575B (fi) 1994-03-31
DE3786001D1 (de) 1993-07-01
EP0271291A3 (en) 1989-05-10
CN87107422A (zh) 1988-07-20
FI875296A0 (fi) 1987-12-01
KR880008461A (ko) 1988-08-31
FI91575C (fi) 1994-07-11
EP0271291A2 (en) 1988-06-15
CN1009602B (zh) 1990-09-12
FI875296A (fi) 1988-06-09
PT86306B (pt) 1993-08-31

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Legal Events

Date Code Title Description
FG3A Patent granted, date of granting

Effective date: 19930222

MM3A Annulment or lapse

Free format text: LAPSE DUE TO NON-PAYMENT OF FEES

Effective date: 19950831