DE3786001D1 - Mim-diode mit gemischten oxiden als isolator. - Google Patents

Mim-diode mit gemischten oxiden als isolator.

Info

Publication number
DE3786001D1
DE3786001D1 DE8787310658T DE3786001T DE3786001D1 DE 3786001 D1 DE3786001 D1 DE 3786001D1 DE 8787310658 T DE8787310658 T DE 8787310658T DE 3786001 T DE3786001 T DE 3786001T DE 3786001 D1 DE3786001 D1 DE 3786001D1
Authority
DE
Germany
Prior art keywords
insulator
mixed oxides
mim diode
mim
diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8787310658T
Other languages
English (en)
Other versions
DE3786001T2 (de
Inventor
David Arthur Furst
Leon Joseph Vieland
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of DE3786001D1 publication Critical patent/DE3786001D1/de
Application granted granted Critical
Publication of DE3786001T2 publication Critical patent/DE3786001T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Liquid Crystal (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Glass Compositions (AREA)
  • Control Of Motors That Do Not Use Commutators (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
DE87310658T 1986-12-08 1987-12-03 MIM-Diode mit gemischten Oxiden als Isolator. Expired - Fee Related DE3786001T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US93889086A 1986-12-08 1986-12-08

Publications (2)

Publication Number Publication Date
DE3786001D1 true DE3786001D1 (de) 1993-07-01
DE3786001T2 DE3786001T2 (de) 1993-11-18

Family

ID=25472146

Family Applications (1)

Application Number Title Priority Date Filing Date
DE87310658T Expired - Fee Related DE3786001T2 (de) 1986-12-08 1987-12-03 MIM-Diode mit gemischten Oxiden als Isolator.

Country Status (7)

Country Link
EP (1) EP0271291B1 (de)
JP (1) JPH0638526B2 (de)
KR (1) KR930011475B1 (de)
CN (1) CN1009602B (de)
DE (1) DE3786001T2 (de)
FI (1) FI91575C (de)
PT (1) PT86306B (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2231200A (en) * 1989-04-28 1990-11-07 Philips Electronic Associated Mim devices, their method of fabrication and display devices incorporating such devices
DE3929847A1 (de) * 1989-09-08 1991-05-08 Ernst Prof Dr Ing Lueder Verfahren zur herstellung eines elektronischen schaltelementes
KR950011960B1 (ko) * 1992-12-28 1995-10-12 오리온전기주식회사 엠아이엠(mim) 다이오드 구조 및 그 제조방법
EP0636922B1 (de) * 1993-02-10 2001-11-14 Seiko Epson Corporation Nichtlineares wiederstandselement, verfahren zu seiner herstellung und fluessigkristall-anzeigevorrichtung
SG86965A1 (en) * 1993-02-10 2002-03-19 Seiko Epson Corp Nonlinear resistance element, manufacturing fabrication method thereof, and liquid crystal display device
DE19538128C1 (de) * 1995-10-13 1997-02-27 Lueder Ernst Verfahren zur Herstellung eines elektronischen Schaltelementes
JP2006172159A (ja) * 2004-12-16 2006-06-29 Seiko Epson Corp 電子デバイス製造システム、電子デバイスの製造方法、電子デバイス、並びに電気光学装置
TWI422042B (zh) * 2010-11-26 2014-01-01 Univ Nat Chiao Tung 二極體元件及其製作方法
IT201900007572A1 (it) * 2019-05-30 2020-11-30 Green Arise Ltd Diodo quantistico per trasformare una corrente alternata, in particolare una corrente alternata ad alta frequenza, in una corrente continua.

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE633414A (de) * 1962-06-18 1900-01-01
FR2505070B1 (fr) * 1981-01-16 1986-04-04 Suwa Seikosha Kk Dispositif non lineaire pour un panneau d'affichage a cristaux liquides et procede de fabrication d'un tel panneau d'affichage
JPS5833221A (ja) * 1981-08-21 1983-02-26 Seiko Epson Corp 液晶表示装置
JPS58176622A (ja) * 1982-04-09 1983-10-17 Seiko Epson Corp 電気光学装置
DE3570782D1 (en) * 1984-01-23 1989-07-06 Energy Conversion Devices Inc Liquid crystal displays operated by amorphous silicon alloy diodes
JPS60246686A (ja) * 1984-05-22 1985-12-06 Seiko Epson Corp 薄膜非線形抵抗素子
JPS62502069A (ja) * 1985-02-25 1987-08-13 アメリカン テレフオン アンド テレグラフ カムパニ− 能動基板電気光学ディスプレイの温度補正

Also Published As

Publication number Publication date
EP0271291B1 (de) 1993-05-26
CN87107422A (zh) 1988-07-20
FI875296A0 (fi) 1987-12-01
EP0271291A3 (en) 1989-05-10
EP0271291A2 (de) 1988-06-15
FI91575B (fi) 1994-03-31
KR880008461A (ko) 1988-08-31
JPH0638526B2 (ja) 1994-05-18
KR930011475B1 (ko) 1993-12-08
PT86306A (pt) 1989-01-17
CN1009602B (zh) 1990-09-12
PT86306B (pt) 1993-08-31
FI91575C (fi) 1994-07-11
JPS63160286A (ja) 1988-07-04
DE3786001T2 (de) 1993-11-18
FI875296A (fi) 1988-06-09

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee