PT2624292E - Método de transporte de substrato e aparelho de transporte de substrato - Google Patents

Método de transporte de substrato e aparelho de transporte de substrato Download PDF

Info

Publication number
PT2624292E
PT2624292E PT130003387T PT13000338T PT2624292E PT 2624292 E PT2624292 E PT 2624292E PT 130003387 T PT130003387 T PT 130003387T PT 13000338 T PT13000338 T PT 13000338T PT 2624292 E PT2624292 E PT 2624292E
Authority
PT
Portugal
Prior art keywords
substrate transport
transport apparatus
transport method
substrate
transport
Prior art date
Application number
PT130003387T
Other languages
English (en)
Portuguese (pt)
Inventor
Yukitoshi Hase
Masayuki Yamamoto
Original Assignee
Nitto Denko Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nitto Denko Corp filed Critical Nitto Denko Corp
Publication of PT2624292E publication Critical patent/PT2624292E/pt

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67745—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber characterized by movements or sequence of movements of transfer devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/96—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12042—LASER
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15788—Glasses, e.g. amorphous oxides, nitrides or fluorides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress
    • H01L2924/3511—Warping

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
PT130003387T 2012-02-06 2013-01-23 Método de transporte de substrato e aparelho de transporte de substrato PT2624292E (pt)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012023009A JP5959216B2 (ja) 2012-02-06 2012-02-06 基板搬送方法および基板搬送装置

Publications (1)

Publication Number Publication Date
PT2624292E true PT2624292E (pt) 2015-05-20

Family

ID=47721908

Family Applications (1)

Application Number Title Priority Date Filing Date
PT130003387T PT2624292E (pt) 2012-02-06 2013-01-23 Método de transporte de substrato e aparelho de transporte de substrato

Country Status (5)

Country Link
EP (1) EP2624292B1 (enExample)
JP (1) JP5959216B2 (enExample)
KR (1) KR20130090827A (enExample)
PT (1) PT2624292E (enExample)
TW (1) TWI584404B (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101940580B1 (ko) * 2012-05-24 2019-01-22 에이씨엠 리서치 (상하이) 인코포레이티드 로드록 챔버와, 그를 이용하여 기판을 처리하는 방법
KR101455205B1 (ko) * 2014-04-29 2014-10-27 주식회사 다이나테크 교정장치
JP6322083B2 (ja) * 2014-08-08 2018-05-09 日東電工株式会社 半導体ウエハの冷却方法および半導体ウエハの冷却装置
JP6811951B2 (ja) * 2017-02-03 2021-01-13 株式会社ディスコ 搬送機構
JP7112220B2 (ja) * 2017-05-12 2022-08-03 キヤノン株式会社 方法、装置、システム、および物品の製造方法
JP7061012B2 (ja) * 2018-05-01 2022-04-27 株式会社ディスコ 加工装置
JP7282467B2 (ja) * 2019-08-14 2023-05-29 株式会社ディスコ 加工装置
KR102235146B1 (ko) * 2019-10-08 2021-04-02 리얼룩앤컴퍼니 주식회사 냉각 성능이 개선된 3d 포밍필름 제조 장치

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6378546A (ja) * 1986-09-22 1988-04-08 Hitachi Ltd ウエハハンドリング装置
JP2941505B2 (ja) * 1991-08-08 1999-08-25 株式会社東芝 基板位置決め方法
JP3442253B2 (ja) * 1997-03-13 2003-09-02 東京エレクトロン株式会社 基板処理装置
JPH11168131A (ja) * 1997-12-04 1999-06-22 Nec Kyushu Ltd ウエハ搬送チャック
JP4403631B2 (ja) * 2000-04-24 2010-01-27 ソニー株式会社 チップ状電子部品の製造方法、並びにその製造に用いる擬似ウエーハの製造方法
JP4592270B2 (ja) 2003-10-06 2010-12-01 日東電工株式会社 半導体ウエハの支持材からの剥離方法およびこれを用いた装置
JP2007317822A (ja) * 2006-05-25 2007-12-06 Sony Corp 基板処理方法及び半導体装置の製造方法
JP2008053432A (ja) * 2006-08-24 2008-03-06 Disco Abrasive Syst Ltd ウエーハ加工装置
DE102008041250A1 (de) * 2008-08-13 2010-02-25 Ers Electronic Gmbh Verfahren und Vorrichtung zum thermischen Bearbeiten von Kunststoffscheiben, insbesondere Moldwafern
JP5090536B2 (ja) * 2008-11-21 2012-12-05 芝浦メカトロニクス株式会社 基板処理方法及び基板処理装置
JP5549185B2 (ja) * 2009-11-06 2014-07-16 株式会社ニコン 半導体デバイスの製造方法および基板貼り合せ装置
JP2011151149A (ja) 2010-01-20 2011-08-04 Tdk Corp 積層型電子部品の製造方法
JP5543813B2 (ja) * 2010-03-23 2014-07-09 日東電工株式会社 ワーク搬送方法およびワーク搬送装置
JP2012186245A (ja) * 2011-03-04 2012-09-27 Tokyo Electron Ltd 接合装置、接合システム、接合方法、プログラム及びコンピュータ記憶媒体
JP2011223014A (ja) * 2011-06-02 2011-11-04 Furukawa Electric Co Ltd:The チップ保護用フィルム

Also Published As

Publication number Publication date
JP5959216B2 (ja) 2016-08-02
EP2624292B1 (en) 2015-04-22
EP2624292A1 (en) 2013-08-07
TW201351558A (zh) 2013-12-16
JP2013161958A (ja) 2013-08-19
TWI584404B (zh) 2017-05-21
KR20130090827A (ko) 2013-08-14

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