PT115782A - Processo para a produção de materiais nanocompósitos em reator único utilizando tecnologia plasma - Google Patents

Processo para a produção de materiais nanocompósitos em reator único utilizando tecnologia plasma

Info

Publication number
PT115782A
PT115782A PT115782A PT11578219A PT115782A PT 115782 A PT115782 A PT 115782A PT 115782 A PT115782 A PT 115782A PT 11578219 A PT11578219 A PT 11578219A PT 115782 A PT115782 A PT 115782A
Authority
PT
Portugal
Prior art keywords
mixture
flow
volume
production
nanocomposite materials
Prior art date
Application number
PT115782A
Other languages
English (en)
Other versions
PT115782B (pt
Inventor
Stefanova Tatarova Elena
Paulo Mota Capitão Lemos Alves Luís
Paulo Dos Santos Duarte Vieira Henriques Júlio
Miguel Soares Gonçalves Bruno
Original Assignee
Inst Superior Tecnico
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Inst Superior Tecnico filed Critical Inst Superior Tecnico
Priority to PT115782A priority Critical patent/PT115782B/pt
Priority to PCT/PT2020/050033 priority patent/WO2021054849A1/pt
Publication of PT115782A publication Critical patent/PT115782A/pt
Publication of PT115782B publication Critical patent/PT115782B/pt

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • B01J19/12—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electromagnetic waves
    • B01J19/122—Incoherent waves
    • B01J19/126—Microwaves
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/182—Graphene
    • C01B32/184—Preparation
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H05H1/461—Microwave discharges
    • H05H1/4615—Microwave discharges using surface waves
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/50—Solid solutions
    • C01P2002/52—Solid solutions containing elements as dopants
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/50—Solid solutions
    • C01P2002/52—Solid solutions containing elements as dopants
    • C01P2002/54—Solid solutions containing elements as dopants one element only
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
    • C01P2002/72—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by d-values or two theta-values, e.g. as X-ray diagram
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/80—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
    • C01P2002/82—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by IR- or Raman-data
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/80—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
    • C01P2002/85—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by XPS, EDX or EDAX data
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/01—Particle morphology depicted by an image
    • C01P2004/03—Particle morphology depicted by an image obtained by SEM
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/01—Particle morphology depicted by an image
    • C01P2004/04—Particle morphology depicted by an image obtained by TEM, STEM, STM or AFM
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Electromagnetism (AREA)
  • Inorganic Chemistry (AREA)
  • Nanotechnology (AREA)
  • Materials Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Battery Electrode And Active Subsutance (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Manufacture Of Metal Powder And Suspensions Thereof (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Plasma Technology (AREA)

Abstract

A PRESENTE INVENÇÃO REFERE-SE A UM PROCESSO DE PRODUÇÃO DE MATERIAIS NANOCOMPÓSITOS COMPREENDENDO: PRODUZIR NUM REATOR (1) DE GEOMETRIA VARIÁVEL UM VOLUME (3) DE PLASMA DE MICRO-ONDAS DE DENSIDADE ENERGÉTICA DECRESCENTE, EM QUE O VOLUME DE PLASMA COMPREENDE DUAS PARTES (19, 20); INTRODUZIR NA REFERIDA PARTE (19) UM PRIMEIRO ESCOAMENTO FORMADO POR UMA MISTURA DE PELO MENOS UM GÁS INERTE E DE PELO MENOS UM PRECURSOR DE NANOESTRUTURA BIDIMENSIONAL E FAZER DESLOCAR O REFERIDO PRIMEIRO ESCOAMENTO AO LONGO DO VOLUME (3) DE PLASMA PARA DENTRO DA PARTE (20); O PROCESSO COMPREENDENDO AINDA INTRODUZIR NA PARTE (20) UM SEGUNDO ESCOAMENTO FORMADO POR UMA MISTURA DE PELO MENOS UM GÁS INERTE E PELO MENOS UM PRECURSOR DE COMPONENTE DOPANTE, E INTRODUZIR UM TERCEIRO ESCOAMENTO FORMADO POR UMA MISTURA DE PELO MENOS UM GÁS INERTE E PELO MENOS UM TIPO DE NANOPARTÍCULA; MISTURAR OS TRÊS ESCOAMENTOS NO INTERIOR DA PARTE (20) E FAZER DESLOCAR ESTA MISTURA PARA FORA DA PARTE (20) EM DIREÇÃO A UMA SAÍDA (2) DO REATOR (1) ONDE SÃO RECOLHIDOS OS NANOCOMPÓSITOS FORMADOS.
PT115782A 2019-09-17 2019-09-17 Processo para a produção de materiais nanocompósitos em reator único utilizando tecnologia plasma PT115782B (pt)

Priority Applications (2)

Application Number Priority Date Filing Date Title
PT115782A PT115782B (pt) 2019-09-17 2019-09-17 Processo para a produção de materiais nanocompósitos em reator único utilizando tecnologia plasma
PCT/PT2020/050033 WO2021054849A1 (pt) 2019-09-17 2020-09-17 Processo para a produção de materiais nanocompósitos em reator único utilizando tecnologia plasma

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PT115782A PT115782B (pt) 2019-09-17 2019-09-17 Processo para a produção de materiais nanocompósitos em reator único utilizando tecnologia plasma

Publications (2)

Publication Number Publication Date
PT115782A true PT115782A (pt) 2021-03-17
PT115782B PT115782B (pt) 2021-11-04

Family

ID=73139365

Family Applications (1)

Application Number Title Priority Date Filing Date
PT115782A PT115782B (pt) 2019-09-17 2019-09-17 Processo para a produção de materiais nanocompósitos em reator único utilizando tecnologia plasma

Country Status (2)

Country Link
PT (1) PT115782B (pt)
WO (1) WO2021054849A1 (pt)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8221853B2 (en) * 2008-09-03 2012-07-17 The Regents Of The University Of California Microwave plasma CVD of NANO structured tin/carbon composites
KR101745547B1 (ko) * 2015-05-29 2017-06-12 한국생산기술연구원 자체 가열식 탄소-금속 나노복합체의 제조방법 및 이에 의해 제조된 그래핀-금속 나노복합체
TWI648423B (zh) * 2016-03-08 2019-01-21 財團法人工業技術研究院 金屬摻雜石墨烯及其成長方法
PT109387B (pt) * 2016-05-13 2021-12-14 Inst Superior Tecnico Processo e sistema para a produção seletiva de nanoestruturas bidimensionais autónomas utilizando tecnologia plasma

Also Published As

Publication number Publication date
PT115782B (pt) 2021-11-04
WO2021054849A1 (pt) 2021-03-25

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Effective date: 20200309

FG3A Patent granted, date of granting

Effective date: 20211029