PL94622B1 - Sposob wytwarzania tranzystora unipolarnego oraz tranzystor unipolarny - Google Patents

Sposob wytwarzania tranzystora unipolarnego oraz tranzystor unipolarny Download PDF

Info

Publication number
PL94622B1
PL94622B1 PL16808774A PL16808774A PL94622B1 PL 94622 B1 PL94622 B1 PL 94622B1 PL 16808774 A PL16808774 A PL 16808774A PL 16808774 A PL16808774 A PL 16808774A PL 94622 B1 PL94622 B1 PL 94622B1
Authority
PL
Poland
Prior art keywords
layer
insulating layer
source
gate
oxide insulating
Prior art date
Application number
PL16808774A
Other languages
English (en)
Polish (pl)
Original Assignee
Fairchild Camera Instr Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fairchild Camera Instr Co filed Critical Fairchild Camera Instr Co
Publication of PL94622B1 publication Critical patent/PL94622B1/pl

Links

Landscapes

  • Element Separation (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
PL16808774A 1973-01-15 1974-01-14 Sposob wytwarzania tranzystora unipolarnego oraz tranzystor unipolarny PL94622B1 (pl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US32367273A 1973-01-15 1973-01-15

Publications (1)

Publication Number Publication Date
PL94622B1 true PL94622B1 (pl) 1977-08-31

Family

ID=23260226

Family Applications (1)

Application Number Title Priority Date Filing Date
PL16808774A PL94622B1 (pl) 1973-01-15 1974-01-14 Sposob wytwarzania tranzystora unipolarnego oraz tranzystor unipolarny

Country Status (6)

Country Link
JP (3) JPS49110280A (enrdf_load_stackoverflow)
DD (1) DD110386A5 (enrdf_load_stackoverflow)
HK (1) HK6580A (enrdf_load_stackoverflow)
HU (1) HU171264B (enrdf_load_stackoverflow)
IT (1) IT999786B (enrdf_load_stackoverflow)
PL (1) PL94622B1 (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5171677A (en) * 1974-12-18 1976-06-21 Mitsubishi Electric Corp Handotaisochino seizohoho
JPS51142982A (en) * 1975-05-05 1976-12-08 Intel Corp Method of producing single crystal silicon ic
JPS5353275A (en) * 1976-10-26 1978-05-15 Seiko Epson Corp Semiconductor device

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3475234A (en) * 1967-03-27 1969-10-28 Bell Telephone Labor Inc Method for making mis structures

Also Published As

Publication number Publication date
JPS5595368A (en) 1980-07-19
IT999786B (it) 1976-03-10
HU171264B (hu) 1977-12-28
DD110386A5 (enrdf_load_stackoverflow) 1974-12-12
JPS5595367A (en) 1980-07-19
HK6580A (en) 1980-03-07
JPS5549426B2 (enrdf_load_stackoverflow) 1980-12-11
JPS49110280A (enrdf_load_stackoverflow) 1974-10-21

Similar Documents

Publication Publication Date Title
US3913211A (en) Method of MOS transistor manufacture
US3382568A (en) Method for providing electrical connections to semiconductor devices
KR940008728B1 (ko) 반도체 장치 및 그 제조방법
EP0146895B1 (en) Method of manufacturing semiconductor device
US4407060A (en) Method of manufacturing a semiconductor device
GB1567808A (en) Semiconductor devices and method of manufacturing the same
WO1982002283A1 (en) Method for fabricating complementary semiconductor devices
US4113533A (en) Method of making a mos device
JPS5850015B2 (ja) 半導体装置の製造方法
US4221044A (en) Self-alignment of gate contacts at local or remote sites
EP0055521A1 (en) Method of filling a groove in a semiconductor substrate
US4816425A (en) Polycide process for integrated circuits
CA1045724A (en) Method for forming integrated circuit regions defined by recessed dielectric isolation
US4151631A (en) Method of manufacturing Si gate MOS integrated circuit
JPS5836499B2 (ja) ２層マスクを用いた半導体デバイスの製造方法
KR870006673A (ko) 자기정열된 쌍극성트랜지스터 구조의 제조공정
US4498224A (en) Method of manufacturing a MOSFET using accelerated ions to form an amorphous region
KR860000706A (ko) 반도체 장치 및 그 제조방법
JPS58116764A (ja) 半導体装置の製造方法
US4721687A (en) Method of increasing the thickness of a field oxide
US4085499A (en) Method of making a MOS-type semiconductor device
PL94622B1 (pl) Sposob wytwarzania tranzystora unipolarnego oraz tranzystor unipolarny
US5077229A (en) Monolithic chemical sensor of the chemfet type incorporating an ion-selective membrane and method of making the same
CA1139014A (en) Method of manufacturing a device in a silicon wafer
US5138425A (en) Semiconductor integrated circuit device with nitride barrier layer ion implanted with resistivity decreasing elements