PL94622B1 - Sposob wytwarzania tranzystora unipolarnego oraz tranzystor unipolarny - Google Patents

Sposob wytwarzania tranzystora unipolarnego oraz tranzystor unipolarny Download PDF

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Publication number
PL94622B1
PL94622B1 PL16808774A PL16808774A PL94622B1 PL 94622 B1 PL94622 B1 PL 94622B1 PL 16808774 A PL16808774 A PL 16808774A PL 16808774 A PL16808774 A PL 16808774A PL 94622 B1 PL94622 B1 PL 94622B1
Authority
PL
Poland
Prior art keywords
layer
insulating layer
source
gate
oxide insulating
Prior art date
Application number
PL16808774A
Other languages
English (en)
Polish (pl)
Original Assignee
Fairchild Camera Instr Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fairchild Camera Instr Co filed Critical Fairchild Camera Instr Co
Publication of PL94622B1 publication Critical patent/PL94622B1/pl

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  • Element Separation (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
PL16808774A 1973-01-15 1974-01-14 Sposob wytwarzania tranzystora unipolarnego oraz tranzystor unipolarny PL94622B1 (pl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US32367273A 1973-01-15 1973-01-15

Publications (1)

Publication Number Publication Date
PL94622B1 true PL94622B1 (pl) 1977-08-31

Family

ID=23260226

Family Applications (1)

Application Number Title Priority Date Filing Date
PL16808774A PL94622B1 (pl) 1973-01-15 1974-01-14 Sposob wytwarzania tranzystora unipolarnego oraz tranzystor unipolarny

Country Status (6)

Country Link
JP (3) JPS49110280A (cs)
DD (1) DD110386A5 (cs)
HK (1) HK6580A (cs)
HU (1) HU171264B (cs)
IT (1) IT999786B (cs)
PL (1) PL94622B1 (cs)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5171677A (en) * 1974-12-18 1976-06-21 Mitsubishi Electric Corp Handotaisochino seizohoho
JPS51142982A (en) * 1975-05-05 1976-12-08 Intel Corp Method of producing single crystal silicon ic
JPS5353275A (en) * 1976-10-26 1978-05-15 Seiko Epson Corp Semiconductor device

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3475234A (en) * 1967-03-27 1969-10-28 Bell Telephone Labor Inc Method for making mis structures

Also Published As

Publication number Publication date
HK6580A (en) 1980-03-07
IT999786B (it) 1976-03-10
DD110386A5 (cs) 1974-12-12
JPS5595367A (en) 1980-07-19
JPS5595368A (en) 1980-07-19
HU171264B (hu) 1977-12-28
JPS49110280A (cs) 1974-10-21
JPS5549426B2 (cs) 1980-12-11

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