PL449367A1 - Method of passivation of semiconductor compounds using hydrophobic ionic liquids in atmospheric air conditions - Google Patents

Method of passivation of semiconductor compounds using hydrophobic ionic liquids in atmospheric air conditions

Info

Publication number
PL449367A1
PL449367A1 PL449367A PL44936724A PL449367A1 PL 449367 A1 PL449367 A1 PL 449367A1 PL 449367 A PL449367 A PL 449367A PL 44936724 A PL44936724 A PL 44936724A PL 449367 A1 PL449367 A1 PL 449367A1
Authority
PL
Poland
Prior art keywords
passivation
hydrophobic ionic
atmospheric air
ionic liquids
air conditions
Prior art date
Application number
PL449367A
Other languages
Polish (pl)
Inventor
Małgorzata Nyga
Małgorzata Kopytko
Jacek Boguski
Waldemar Gawron
Original Assignee
Wojskowa Akademia Techniczna Im. Jarosława Dąbrowskiego
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wojskowa Akademia Techniczna Im. Jarosława Dąbrowskiego filed Critical Wojskowa Akademia Techniczna Im. Jarosława Dąbrowskiego
Priority to PL449367A priority Critical patent/PL449367A1/en
Publication of PL449367A1 publication Critical patent/PL449367A1/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C22/00—Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

Przedmiotem zgłoszenia jest sposób pasywacji związków półprzewodnikowych za pomocą hydrofobowych cieczy jonowych w warunkach powietrza atmosferycznego, który polega tym, że hydrofobową ciecz jonową nanosi się bezpośrednio na struktury półprzewodnikowe związków AIIIBV i AIIBVI tworząc warstwę pasywującą. Pasywacja jest wykonywana na strukturach planarnych lub na strukturach typu „mesa”. Pasywator można nanieść metodą rozwirowania lub poprzez zakroplenie. Struktury półprzewodnikowe poddane pasywacji wygrzewa się w temperaturze nie mniejszej niż 70°C przez ok. 10 minut. Pasywacja jest etapem po uprzednim wytworzeniu kontaktów elektrycznych i montażu za pomocą połączeń drutowych i montażu typu Flip Chip.The subject of the application is a method of passivation of semiconductor compounds using hydrophobic ionic liquids in atmospheric air conditions, which consists in that the hydrophobic ionic liquid is applied directly to the semiconductor structures of AIIIBV and AIIBVI compounds to form a passivating layer. Passivation is performed on planar structures or on "mesa" type structures. The passivator can be applied by the spinning method or by dripping. The semiconductor structures subjected to passivation are heated at a temperature of not less than 70°C for approx. 10 minutes. Passivation is a stage after prior production of electrical contacts and assembly using wire connections and Flip Chip assembly.

PL449367A 2024-07-26 2024-07-26 Method of passivation of semiconductor compounds using hydrophobic ionic liquids in atmospheric air conditions PL449367A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PL449367A PL449367A1 (en) 2024-07-26 2024-07-26 Method of passivation of semiconductor compounds using hydrophobic ionic liquids in atmospheric air conditions

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PL449367A PL449367A1 (en) 2024-07-26 2024-07-26 Method of passivation of semiconductor compounds using hydrophobic ionic liquids in atmospheric air conditions

Publications (1)

Publication Number Publication Date
PL449367A1 true PL449367A1 (en) 2025-03-17

Family

ID=94970043

Family Applications (1)

Application Number Title Priority Date Filing Date
PL449367A PL449367A1 (en) 2024-07-26 2024-07-26 Method of passivation of semiconductor compounds using hydrophobic ionic liquids in atmospheric air conditions

Country Status (1)

Country Link
PL (1) PL449367A1 (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120313199A1 (en) * 2011-05-26 2012-12-13 Hitachi Chemical Company, Ltd. Material for forming passivation film for semiconductor substrate, passivation film for semiconductor substrate and method of producing the same, and photovoltaic cell element and method of producing the same
WO2013111463A1 (en) * 2012-01-23 2013-08-01 日立化成株式会社 Material for forming passivation film for semiconductor substrate, method of manufacturing semiconductor substrate comprising passivation film for semiconductor substrate, solar cell element, and method of manufacturing solar cell element
WO2020248864A1 (en) * 2019-06-12 2020-12-17 杭州纤纳光电科技有限公司 Passivator, passivation method therefor and method for preparing semiconductor film

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120313199A1 (en) * 2011-05-26 2012-12-13 Hitachi Chemical Company, Ltd. Material for forming passivation film for semiconductor substrate, passivation film for semiconductor substrate and method of producing the same, and photovoltaic cell element and method of producing the same
WO2013111463A1 (en) * 2012-01-23 2013-08-01 日立化成株式会社 Material for forming passivation film for semiconductor substrate, method of manufacturing semiconductor substrate comprising passivation film for semiconductor substrate, solar cell element, and method of manufacturing solar cell element
WO2020248864A1 (en) * 2019-06-12 2020-12-17 杭州纤纳光电科技有限公司 Passivator, passivation method therefor and method for preparing semiconductor film

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