PL4315429T3 - Urządzenie fotowoltaiczne ze złączem pasywowanym i odpowiadający mu sposób wytwarzania - Google Patents
Urządzenie fotowoltaiczne ze złączem pasywowanym i odpowiadający mu sposób wytwarzaniaInfo
- Publication number
- PL4315429T3 PL4315429T3 PL22718092.4T PL22718092T PL4315429T3 PL 4315429 T3 PL4315429 T3 PL 4315429T3 PL 22718092 T PL22718092 T PL 22718092T PL 4315429 T3 PL4315429 T3 PL 4315429T3
- Authority
- PL
- Poland
- Prior art keywords
- manufacture
- photovoltaic device
- corresponding method
- passivated contact
- passivated
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
- H10F10/164—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells
- H10F10/165—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells
- H10F10/166—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells the Group IV-IV heterojunctions being heterojunctions of crystalline and amorphous materials, e.g. silicon heterojunction [SHJ] photovoltaic cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/30—Coatings
- H10F77/306—Coatings for devices having potential barriers
- H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/121—The active layers comprising only Group IV materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/129—Passivating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
- H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
- H10F77/164—Polycrystalline semiconductors
- H10F77/1642—Polycrystalline semiconductors including only Group IV materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/206—Electrodes for devices having potential barriers
- H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP21166148.3A EP4068392A1 (en) | 2021-03-31 | 2021-03-31 | Photovoltaic device with passivated contact and corresponding method of manufacture |
| PCT/EP2022/057488 WO2022207408A1 (en) | 2021-03-31 | 2022-03-22 | Photovoltaic device with passivated contact and corresponding method of manufacture |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| PL4315429T3 true PL4315429T3 (pl) | 2025-05-12 |
Family
ID=75339451
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PL22718092.4T PL4315429T3 (pl) | 2021-03-31 | 2022-03-22 | Urządzenie fotowoltaiczne ze złączem pasywowanym i odpowiadający mu sposób wytwarzania |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US12433060B2 (pl) |
| EP (2) | EP4068392A1 (pl) |
| JP (1) | JP2024513183A (pl) |
| CN (1) | CN117561613A (pl) |
| ES (1) | ES3023336T3 (pl) |
| PL (1) | PL4315429T3 (pl) |
| WO (1) | WO2022207408A1 (pl) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN118016731A (zh) * | 2023-12-04 | 2024-05-10 | 天合光能股份有限公司 | 杂化异质结太阳能电池及电池组件和制备方法 |
| CN117995944A (zh) * | 2024-02-07 | 2024-05-07 | 天合光能股份有限公司 | 一种TOPCon电池及其制备方法 |
| CN118016732A (zh) * | 2024-02-21 | 2024-05-10 | 绵阳炘皓新能源科技有限公司 | 背面选择性双层钝化接触TOPCon电池及制作方法 |
| JP2025164765A (ja) * | 2024-04-19 | 2025-10-30 | 揚州阿特斯太陽能電池有限公司 | 太陽電池及びその製造方法 |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6333457B1 (en) | 2000-08-29 | 2001-12-25 | Sunpower Corporation | Edge passivated silicon solar/photo cell and method of manufacture |
| US7468485B1 (en) * | 2005-08-11 | 2008-12-23 | Sunpower Corporation | Back side contact solar cell with doped polysilicon regions |
| US9196758B2 (en) | 2013-12-20 | 2015-11-24 | Sunpower Corporation | Solar cell emitter region fabrication with differentiated p-type and n-type region architectures |
| US9337369B2 (en) | 2014-03-28 | 2016-05-10 | Sunpower Corporation | Solar cells with tunnel dielectrics |
| US9559245B2 (en) | 2015-03-23 | 2017-01-31 | Sunpower Corporation | Blister-free polycrystalline silicon for solar cells |
| NL2015533B1 (en) * | 2015-09-30 | 2017-04-20 | Tempress Ip B V | Method of manufacturing of a solar cell and solar cell thus obtained. |
| KR101740523B1 (ko) * | 2015-12-21 | 2017-05-26 | 엘지전자 주식회사 | 태양 전지 및 그 제조 방법 |
| JP6537722B2 (ja) * | 2016-06-01 | 2019-07-03 | 三菱電機株式会社 | 光起電力素子およびその製造方法 |
| CN108831953B (zh) * | 2017-05-04 | 2021-04-27 | 上海凯世通半导体股份有限公司 | 太阳能电池的制作方法 |
| CN108666393B (zh) * | 2018-07-16 | 2024-02-09 | 英利能源（中国）有限公司 | 太阳能电池的制备方法及太阳能电池 |
| CN109256440A (zh) * | 2018-09-17 | 2019-01-22 | 浙江爱旭太阳能科技有限公司 | 一种选择性钝化接触晶体硅太阳能电池及其制备方法 |
| WO2020060487A1 (en) * | 2018-09-17 | 2020-03-26 | National University Of Singapore | Solar cell and method for fabricating a solar cell |
| WO2020180244A1 (en) * | 2019-03-01 | 2020-09-10 | National University Of Singapore | Solar cell and method for fabricating a solar cell |
| CN113875025A (zh) * | 2019-03-29 | 2021-12-31 | 新加坡国立大学 | 太阳能电池和太阳能电池的制造方法 |
| CN112447867A (zh) * | 2019-09-02 | 2021-03-05 | 财团法人金属工业研究发展中心 | 太阳能电池结构及其制作方法 |
| CN110828583B (zh) * | 2019-09-24 | 2021-09-14 | 苏州腾晖光伏技术有限公司 | 正面局域钝化接触的晶硅太阳电池及其制备方法 |
| CN110752261A (zh) * | 2019-11-20 | 2020-02-04 | 浙江晶科能源有限公司 | 一种光伏电池局部遂穿氧化层钝化接触结构及光伏组件 |
-
2021
- 2021-03-31 EP EP21166148.3A patent/EP4068392A1/en not_active Withdrawn
-
2022
- 2022-03-22 CN CN202280024350.4A patent/CN117561613A/zh active Pending
- 2022-03-22 JP JP2023558910A patent/JP2024513183A/ja active Pending
- 2022-03-22 WO PCT/EP2022/057488 patent/WO2022207408A1/en not_active Ceased
- 2022-03-22 EP EP22718092.4A patent/EP4315429B1/en active Active
- 2022-03-22 PL PL22718092.4T patent/PL4315429T3/pl unknown
- 2022-03-22 ES ES22718092T patent/ES3023336T3/es active Active
- 2022-03-22 US US18/550,240 patent/US12433060B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN117561613A (zh) | 2024-02-13 |
| US12433060B2 (en) | 2025-09-30 |
| JP2024513183A (ja) | 2024-03-22 |
| EP4315429C0 (en) | 2025-02-26 |
| ES3023336T3 (en) | 2025-05-30 |
| US20240162354A1 (en) | 2024-05-16 |
| WO2022207408A1 (en) | 2022-10-06 |
| EP4068392A1 (en) | 2022-10-05 |
| EP4315429A1 (en) | 2024-02-07 |
| EP4315429B1 (en) | 2025-02-26 |
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