PL424418A1 - Dye solar cell - Google Patents

Dye solar cell

Info

Publication number
PL424418A1
PL424418A1 PL424418A PL42441818A PL424418A1 PL 424418 A1 PL424418 A1 PL 424418A1 PL 424418 A PL424418 A PL 424418A PL 42441818 A PL42441818 A PL 42441818A PL 424418 A1 PL424418 A1 PL 424418A1
Authority
PL
Poland
Prior art keywords
solar cell
layer
dye solar
dye
photoelectrode
Prior art date
Application number
PL424418A
Other languages
Polish (pl)
Other versions
PL239551B1 (en
Inventor
Krzysztof Lukaszkowicz
Marek Szindler
Magdalena Szindler
Original Assignee
Politechnika Śląska
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Politechnika Śląska filed Critical Politechnika Śląska
Priority to PL424418A priority Critical patent/PL239551B1/en
Publication of PL424418A1 publication Critical patent/PL424418A1/en
Publication of PL239551B1 publication Critical patent/PL239551B1/en

Links

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Abstract

Barwnikowe ogniwo słoneczne charakteryzuje się tym, że fotoelektroda składa się ze szklanej płytki (2) z warstwą transparentnego tlenku przewodzącego TCO (3) oraz półprzewodnika typu n w postaci nanokrystalicznego tlenku niklu z zaadsorbowanym barwnikiem (4), do którego przylega cienka warstwa materiału transportującego dziury (5), którą stanowi warstwa tytanianu litu z domieszkami metali przejściowych, na której umieszczona jest metalowa elektroda (6), przy użyciu której elektrony oddawane są do zewnętrznego obwodu.The dye solar cell is characterized in that the photoelectrode consists of a glass plate (2) with a layer of transparent conductive TCO (3) and a n-type semiconductor in the form of nanocrystalline nickel oxide with adsorbed dye (4), to which a thin layer of hole transporting material adheres ( 5), which is a layer of lithium titanate with admixtures of transition metals, on which a metal electrode (6) is placed, by means of which electrons are transferred to the external circuit.

PL424418A 2018-01-30 2018-01-30 Dye solar cell PL239551B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PL424418A PL239551B1 (en) 2018-01-30 2018-01-30 Dye solar cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PL424418A PL239551B1 (en) 2018-01-30 2018-01-30 Dye solar cell

Publications (2)

Publication Number Publication Date
PL424418A1 true PL424418A1 (en) 2019-08-12
PL239551B1 PL239551B1 (en) 2021-12-13

Family

ID=67549952

Family Applications (1)

Application Number Title Priority Date Filing Date
PL424418A PL239551B1 (en) 2018-01-30 2018-01-30 Dye solar cell

Country Status (1)

Country Link
PL (1) PL239551B1 (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060008580A1 (en) * 2000-11-24 2006-01-12 Gabrielle Nelles Hybrid solar cells with thermal deposited semiconductive oxide layer
US20090229667A1 (en) * 2008-03-14 2009-09-17 Solarmer Energy, Inc. Translucent solar cell
PL410404A1 (en) * 2014-12-05 2016-06-06 Politechnika Śląska Silicon photovoltaic cell and method for producing it

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060008580A1 (en) * 2000-11-24 2006-01-12 Gabrielle Nelles Hybrid solar cells with thermal deposited semiconductive oxide layer
US20090229667A1 (en) * 2008-03-14 2009-09-17 Solarmer Energy, Inc. Translucent solar cell
PL410404A1 (en) * 2014-12-05 2016-06-06 Politechnika Śląska Silicon photovoltaic cell and method for producing it

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
KATARZYNA ZNAJDEK, STRESZCZENIE ROZPRAWY DOKTORSKIEJ: ELASTYCZNE OGNIWA FOTOWOLTAICZNE, 2014 *

Also Published As

Publication number Publication date
PL239551B1 (en) 2021-12-13

Similar Documents

Publication Publication Date Title
Kumar et al. Flexible, low-temperature, solution processed ZnO-based perovskite solid state solar cells
GB2497909A (en) Diffusion barrier layer for thin film solar cell
CN103915567A (en) Perovskite solar cell with inorganic compound as hole transfer layer
CN104269452A (en) Perovskite solar battery made of silicon-based thin-film materials and manufacturing method thereof
CN204315621U (en) A kind of LED flip chip
CN105280817A (en) Solar cell and forming method thereof
CN102543461A (en) Flexible quantum dot sensitized solar cells
CN104218105A (en) Flexible CIGS (copper indium gallium selenide) solar cell and interconnection method for same
PL424418A1 (en) Dye solar cell
Rajalakshmi et al. Improved photoelectrochemical performance of (Bi1− xSbx) 2S3 photoanodes
CN108039391A (en) A kind of gallium oxide X-ray detector and preparation method thereof
Baranov An anthology of the distinguished achievements in science and technique. Part 42: Electronics: retrospective view, successes and prospects of its development
Wang et al. High performance of inverted polymer solar cells with cobalt oxide as hole-transporting layer
CN103199131A (en) Electric field reinforced type Schottky junction solar cell structure
CN101958368A (en) Solar cell and manufacture method thereof
CN101515584B (en) Diode chip integrated through MOS technological structure
GB1026766A (en) Improvements in or relating to methods of manufacturing semiconductor devices
Liu et al. Fabrication of ETA cells based on ZnO/CuInS2 core/shell heterostructure
CN205810834U (en) A kind of translucent film solar battery structure
MY190562A (en) Interdigitated back contact metal-insulator-semiconductor solar cell with printed oxide tunnel junctions
US20180331231A1 (en) A field-effect transistor and the manufacturing method
CN203850322U (en) A photoresistor
CN204424296U (en) The upper plated film support plate of solar energy back of the body passivation cell
TW201613121A (en) Zinc oxide buffer layer structure and process of thin film solar cell
Hou et al. Optical switch of a-IGZO TFT and triple junction photovoltaic cell