PL410404A1 - Silicon photovoltaic cell and method for producing it - Google Patents

Silicon photovoltaic cell and method for producing it

Info

Publication number
PL410404A1
PL410404A1 PL410404A PL41040414A PL410404A1 PL 410404 A1 PL410404 A1 PL 410404A1 PL 410404 A PL410404 A PL 410404A PL 41040414 A PL41040414 A PL 41040414A PL 410404 A1 PL410404 A1 PL 410404A1
Authority
PL
Poland
Prior art keywords
laser beam
photovoltaic cell
reflective
al2o3
wavelength
Prior art date
Application number
PL410404A
Other languages
Polish (pl)
Other versions
PL225486B1 (en
Inventor
Leszek A. Dobrzański
Aleksandra Drygała
Marek Szindler
Magdalena Szindler
Janusz Wyrwał
Ewa Jonnda
Original Assignee
Politechnika Śląska
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Politechnika Śląska filed Critical Politechnika Śląska
Priority to PL410404A priority Critical patent/PL225486B1/en
Publication of PL410404A1 publication Critical patent/PL410404A1/en
Publication of PL225486B1 publication Critical patent/PL225486B1/en

Links

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)

Abstract

Ogniwo fotowoltaiczne charakteryzuje się tym, że ma teksturę powierzchni wykonaną wiązką lasera o długości fali promieniowania 1064 nm lub 355 nm, natomiast warstwę antyrefleksyjną stanowi wielowarstwowe pokrycie antyrefleksyjne Al2O3/ZnO naniesione metodą ALD. Sposób wytworzenia wynalazku, polega na tym, że teksturę powierzchni polikrystalicznej płytki krzemowej wykonuje się wiązką lasera o długości fali promieniowania 1064 nm lub 355 nm o mocy 2 ÷ 50 W w trybie pulsacyjnym z częstotliwością wyzwalania impulsów 3 ÷ 1000 kHz przy prędkości skanowania wiązki laserowej 10 ÷ 400 mm/s, następnie formuje się złącze p-n w wysokotemperaturowym piecu w wyniku dyfuzji, po czym wielowarstwowe pokrycie antyrefleksyjne Al2O3/ZnO o grubości 60 ÷ 100 nm nanosi się metodą ALD używając trimetyloaluminium oraz dietylocynku jako prekursora odpowiednio tlenku aluminium i cynku oraz wody jako reagenta w temperaturze 200 ÷ 400°C, a na tak przygotowana płytkę nanosi się metoda sitodruku kontakt metaliczny przedni i tylni.The photovoltaic cell is characterized in that it has a surface texture made with a laser beam with a wavelength of 1064 nm or 355 nm, while the anti-reflective layer is a multilayer anti-reflective Al2O3 / ZnO coating applied by the ALD method. The method of making the invention is based on the fact that the texture of the surface of the polycrystalline silicon wafer is made with a laser beam with a wavelength of 1064 nm or 355 nm with a power of 2 ÷ 50 W in pulse mode with a pulse frequency of 3 ÷ 1000 kHz at a laser beam scanning speed of 10 ÷ 400 mm / s, then a pn junction is formed in a high-temperature furnace as a result of diffusion, after which the Al2O3 / ZnO multilayer anti-reflective coating with a thickness of 60 ÷ 100 nm is applied by the ALD method using trimethylaluminium and diethylzinc as a precursor to aluminum and zinc oxide and water respectively reagent at a temperature of 200 ÷ 400 ° C, and the plate prepared in this way is applied by screen printing with metallic front and rear contact.

PL410404A 2014-12-05 2014-12-05 Silicon photovoltaic cell and method for producing it PL225486B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PL410404A PL225486B1 (en) 2014-12-05 2014-12-05 Silicon photovoltaic cell and method for producing it

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PL410404A PL225486B1 (en) 2014-12-05 2014-12-05 Silicon photovoltaic cell and method for producing it

Publications (2)

Publication Number Publication Date
PL410404A1 true PL410404A1 (en) 2016-06-06
PL225486B1 PL225486B1 (en) 2017-04-28

Family

ID=56086980

Family Applications (1)

Application Number Title Priority Date Filing Date
PL410404A PL225486B1 (en) 2014-12-05 2014-12-05 Silicon photovoltaic cell and method for producing it

Country Status (1)

Country Link
PL (1) PL225486B1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
PL424418A1 (en) * 2018-01-30 2019-08-12 Politechnika Śląska Dye solar cell

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
PL424418A1 (en) * 2018-01-30 2019-08-12 Politechnika Śląska Dye solar cell

Also Published As

Publication number Publication date
PL225486B1 (en) 2017-04-28

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