PL4124180T3 - Urządzenie zasilające o wysokiej częstotliwości i sposób sterowania sygnałem wyjściowym tego urządzenia - Google Patents

Urządzenie zasilające o wysokiej częstotliwości i sposób sterowania sygnałem wyjściowym tego urządzenia

Info

Publication number
PL4124180T3
PL4124180T3 PL21770777.7T PL21770777T PL4124180T3 PL 4124180 T3 PL4124180 T3 PL 4124180T3 PL 21770777 T PL21770777 T PL 21770777T PL 4124180 T3 PL4124180 T3 PL 4124180T3
Authority
PL
Poland
Prior art keywords
power supply
control method
supply device
output control
frequency power
Prior art date
Application number
PL21770777.7T
Other languages
English (en)
Inventor
Takeshi Fujiwara
Hiroyuki Kojima
Satoshi Kawai
Original Assignee
Kyosan Electric Mfg. Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyosan Electric Mfg. Co., Ltd. filed Critical Kyosan Electric Mfg. Co., Ltd.
Publication of PL4124180T3 publication Critical patent/PL4124180T3/pl

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H2242/00—Auxiliary systems
    • H05H2242/20—Power circuits
    • H05H2242/22—DC, AC or pulsed generators

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
PL21770777.7T 2020-03-16 2021-03-04 Urządzenie zasilające o wysokiej częstotliwości i sposób sterowania sygnałem wyjściowym tego urządzenia PL4124180T3 (pl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020045559A JP7291091B2 (ja) 2020-03-16 2020-03-16 高周波電源装置及びその出力制御方法
PCT/JP2021/008460 WO2021187138A1 (ja) 2020-03-16 2021-03-04 高周波電源装置及びその出力制御方法

Publications (1)

Publication Number Publication Date
PL4124180T3 true PL4124180T3 (pl) 2025-08-04

Family

ID=77772047

Family Applications (1)

Application Number Title Priority Date Filing Date
PL21770777.7T PL4124180T3 (pl) 2020-03-16 2021-03-04 Urządzenie zasilające o wysokiej częstotliwości i sposób sterowania sygnałem wyjściowym tego urządzenia

Country Status (8)

Country Link
US (1) US12040158B2 (pl)
EP (1) EP4124180B1 (pl)
JP (1) JP7291091B2 (pl)
KR (1) KR102753298B1 (pl)
CN (1) CN115280903B (pl)
PL (1) PL4124180T3 (pl)
TW (1) TWI869561B (pl)
WO (1) WO2021187138A1 (pl)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12131884B2 (en) * 2022-01-12 2024-10-29 Mks Instruments, Inc. Pulse and bias synchronization methods and systems
WO2025203671A1 (ja) * 2024-03-29 2025-10-02 株式会社ダイヘン 高周波電力供給システム
WO2025203670A1 (ja) * 2024-03-29 2025-10-02 株式会社ダイヘン 高周波電力供給システム

Family Cites Families (25)

* Cited by examiner, † Cited by third party
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JPS6045451B2 (ja) * 1978-03-17 1985-10-09 株式会社日立製作所 デイジタル制御回路試験装置
JPH11214363A (ja) 1998-01-23 1999-08-06 Hitachi Ltd 半導体製造方法とその装置、並びに半導体素子
JP2005130198A (ja) * 2003-10-23 2005-05-19 Ulvac Japan Ltd 高周波装置
US7190119B2 (en) 2003-11-07 2007-03-13 Lam Research Corporation Methods and apparatus for optimizing a substrate in a plasma processing system
US7602127B2 (en) * 2005-04-18 2009-10-13 Mks Instruments, Inc. Phase and frequency control of a radio frequency generator from an external source
WO2010140206A1 (ja) * 2009-06-01 2010-12-09 有限会社 アンナカ 鳥獣駆逐装置
US8404598B2 (en) * 2009-08-07 2013-03-26 Applied Materials, Inc. Synchronized radio frequency pulsing for plasma etching
US9590802B2 (en) * 2011-04-26 2017-03-07 Gnss Technologies Inc. Navigation signal transmitter and method for generating navigation signal
JP5977509B2 (ja) * 2011-12-09 2016-08-24 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
JP5808012B2 (ja) * 2011-12-27 2015-11-10 東京エレクトロン株式会社 プラズマ処理装置
US9462672B2 (en) * 2012-02-22 2016-10-04 Lam Research Corporation Adjustment of power and frequency based on three or more states
TWI599272B (zh) * 2012-09-14 2017-09-11 蘭姆研究公司 根據三個或更多狀態之功率及頻率調整
JP6035606B2 (ja) * 2013-04-09 2016-11-30 株式会社日立ハイテクノロジーズ プラズマ処理方法およびプラズマ処理装置
JP6374647B2 (ja) * 2013-11-05 2018-08-15 東京エレクトロン株式会社 プラズマ処理装置
JP6295119B2 (ja) * 2014-03-25 2018-03-14 株式会社日立ハイテクノロジーズ プラズマ処理装置
US10115567B2 (en) 2014-09-17 2018-10-30 Tokyo Electron Limited Plasma processing apparatus
JP6512962B2 (ja) * 2014-09-17 2019-05-15 東京エレクトロン株式会社 プラズマ処理装置
KR101757818B1 (ko) * 2015-10-12 2017-07-26 세메스 주식회사 펄스화된 고주파 전력 모니터링 장치 및 그를 포함하는 기판 처리 장치
JP6770868B2 (ja) * 2016-10-26 2020-10-21 東京エレクトロン株式会社 プラズマ処理装置のインピーダンス整合のための方法
JP6883488B2 (ja) * 2017-08-18 2021-06-09 東京エレクトロン株式会社 プラズマ処理装置
JP2019091526A (ja) * 2017-11-10 2019-06-13 東京エレクトロン株式会社 パルスモニタ装置及びプラズマ処理装置
JP7175239B2 (ja) 2018-06-22 2022-11-18 東京エレクトロン株式会社 制御方法、プラズマ処理装置、プログラム及び記憶媒体
US11398387B2 (en) * 2018-12-05 2022-07-26 Lam Research Corporation Etching isolation features and dense features within a substrate
JP7451540B2 (ja) * 2019-01-22 2024-03-18 アプライド マテリアルズ インコーポレイテッド パルス状電圧波形を制御するためのフィードバックループ
US12283463B2 (en) * 2019-04-29 2025-04-22 Lam Research Corporation Systems and methods for multi-level pulsing in RF plasma tools

Also Published As

Publication number Publication date
US20230134559A1 (en) 2023-05-04
US12040158B2 (en) 2024-07-16
JP2021150032A (ja) 2021-09-27
EP4124180A1 (en) 2023-01-25
KR102753298B1 (ko) 2025-01-14
JP7291091B2 (ja) 2023-06-14
TWI869561B (zh) 2025-01-11
EP4124180B1 (en) 2025-05-28
KR20220154148A (ko) 2022-11-21
CN115280903A (zh) 2022-11-01
WO2021187138A1 (ja) 2021-09-23
EP4124180A4 (en) 2024-04-03
TW202139789A (zh) 2021-10-16
CN115280903B (zh) 2025-08-19

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