PL3966843T3 - Fotokatoda o zwiększonej wydajności kwantowej - Google Patents

Fotokatoda o zwiększonej wydajności kwantowej

Info

Publication number
PL3966843T3
PL3966843T3 PL20737227.7T PL20737227T PL3966843T3 PL 3966843 T3 PL3966843 T3 PL 3966843T3 PL 20737227 T PL20737227 T PL 20737227T PL 3966843 T3 PL3966843 T3 PL 3966843T3
Authority
PL
Poland
Prior art keywords
photocathode
quantum efficiency
increased quantum
increased
efficiency
Prior art date
Application number
PL20737227.7T
Other languages
English (en)
Inventor
Pascal Lavoute
Gert NÜTZEL
Original Assignee
Photonis France
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Photonis France filed Critical Photonis France
Publication of PL3966843T3 publication Critical patent/PL3966843T3/pl

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R29/00—Arrangements for measuring or indicating electric quantities not covered by groups G01R19/00 - G01R27/00
    • G01R29/08—Measuring electromagnetic field characteristics
    • G01R29/0864—Measuring electromagnetic field characteristics characterised by constructional or functional features
    • G01R29/0878—Sensors; antennas; probes; detectors
    • G01R29/0885—Sensors; antennas; probes; detectors using optical probes, e.g. electro-optical, luminescent, glow discharge, or optical interferometers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/34—Photo-emissive cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
    • H01J29/08—Electrodes intimately associated with a screen on or from which an image or pattern is formed, picked-up, converted or stored, e.g. backing-plates for storage tubes or collecting secondary electrons
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J31/00—Cathode ray tubes; Electron beam tubes
    • H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
    • H01J31/26—Image pick-up tubes having an input of visible light and electric output
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J31/00—Cathode ray tubes; Electron beam tubes
    • H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
    • H01J31/50—Image-conversion or image-amplification tubes, i.e. having optical, X-ray, or analogous input, and optical output
    • H01J31/506—Image-conversion or image-amplification tubes, i.e. having optical, X-ray, or analogous input, and optical output tubes using secondary emission effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J31/00—Cathode ray tubes; Electron beam tubes
    • H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
    • H01J31/50—Image-conversion or image-amplification tubes, i.e. having optical, X-ray, or analogous input, and optical output
    • H01J31/506—Image-conversion or image-amplification tubes, i.e. having optical, X-ray, or analogous input, and optical output tubes using secondary emission effect
    • H01J31/507—Image-conversion or image-amplification tubes, i.e. having optical, X-ray, or analogous input, and optical output tubes using secondary emission effect using a large number of channels, e.g. microchannel plates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J43/00—Secondary-emission tubes; Electron-multiplier tubes
    • H01J43/04—Electron multipliers
    • H01J43/06—Electrode arrangements
    • H01J43/08—Cathode arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2231/00—Cathode ray tubes or electron beam tubes
    • H01J2231/50—Imaging and conversion tubes
    • H01J2231/50005—Imaging and conversion tubes characterised by form of illumination
    • H01J2231/5001—Photons

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Common Detailed Techniques For Electron Tubes Or Discharge Tubes (AREA)
  • Light Receiving Elements (AREA)
  • Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
PL20737227.7T 2019-05-23 2020-05-22 Fotokatoda o zwiększonej wydajności kwantowej PL3966843T3 (pl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1905412A FR3096506B1 (fr) 2019-05-23 2019-05-23 Photocathode à rendement quantique amélioré
PCT/FR2020/000176 WO2020234518A1 (fr) 2019-05-23 2020-05-22 Photocathode a rendement quantique ameliore

Publications (1)

Publication Number Publication Date
PL3966843T3 true PL3966843T3 (pl) 2025-03-24

Family

ID=68072656

Family Applications (1)

Application Number Title Priority Date Filing Date
PL20737227.7T PL3966843T3 (pl) 2019-05-23 2020-05-22 Fotokatoda o zwiększonej wydajności kwantowej

Country Status (15)

Country Link
US (1) US11676790B2 (pl)
EP (1) EP3966843B1 (pl)
JP (1) JP7506691B2 (pl)
KR (1) KR102826048B1 (pl)
CN (1) CN113994220B (pl)
AU (1) AU2020278915A1 (pl)
BR (1) BR112021023405A2 (pl)
CA (1) CA3139044A1 (pl)
FR (1) FR3096506B1 (pl)
IL (1) IL288262B2 (pl)
MY (1) MY206386A (pl)
PL (1) PL3966843T3 (pl)
RS (1) RS66402B1 (pl)
SG (1) SG11202112989YA (pl)
WO (1) WO2020234518A1 (pl)

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05110051A (ja) * 1991-10-21 1993-04-30 Hamamatsu Photonics Kk 電子放射デバイス
CN1119829C (zh) * 1996-09-17 2003-08-27 浜松光子学株式会社 光电阴极及装备有它的电子管
CN1123905C (zh) * 1998-10-22 2003-10-08 先锋电子株式会社 电子发射装置和使用该装置的显示装置
EP1365260A4 (en) * 2001-01-31 2013-01-23 Hamamatsu Photonics Kk ELECTRON BEAM DETECTOR, RASTER ELECTRONIC MICROSCOPE, MASS SPECTROMETER AND ION DETECTOR
EP1262797B1 (en) * 2001-05-11 2011-07-13 FUJIFILM Corporation Method and apparatus for image recording and image recording medium
JP4410027B2 (ja) * 2004-05-24 2010-02-03 浜松ホトニクス株式会社 光電陰極及び電子管
JP4647955B2 (ja) * 2004-08-17 2011-03-09 浜松ホトニクス株式会社 光電陰極板及び電子管
JP2006302610A (ja) * 2005-04-19 2006-11-02 Hamamatsu Photonics Kk 半導体光電陰極
JP4939033B2 (ja) * 2005-10-31 2012-05-23 浜松ホトニクス株式会社 光電陰極
US20080070340A1 (en) * 2006-09-14 2008-03-20 Nicholas Francis Borrelli Image sensor using thin-film SOI
FR2925218B1 (fr) 2007-12-13 2010-03-12 Photonis France Tube intensificateur d'image a encombrement reduit et systeme de vision nocturne equipe d'un tel tube
CN101478645B (zh) * 2008-12-20 2010-12-15 中国科学院西安光学精密机械研究所 一种基于半导体层的电荷感应成像方法
NL1037989C2 (en) * 2010-05-28 2011-11-29 Photonis France Sas An electron multiplying structure for use in a vacuum tube using electron multiplying as well as a vacuum tube using electron multiplying provided with such an electron multiplying structure.
FR2961628B1 (fr) 2010-06-18 2012-08-31 Photonis France Détecteur a multiplicateur d'électrons forme d'une couche de nanodiamant hautement dope.
GB201116778D0 (en) * 2011-09-29 2011-11-09 Secr Defence Bright source protection for image intensification devices
US9601299B2 (en) * 2012-08-03 2017-03-21 Kla-Tencor Corporation Photocathode including silicon substrate with boron layer
CN103399338B (zh) * 2013-07-05 2015-11-18 中国科学院西安光学精密机械研究所 一种复合式光电阴极x射线探测装置
CN103887125B (zh) * 2014-02-28 2016-03-30 中国计量学院 一种基于梯度掺杂纳米ZnO薄膜场助发射的透射式GaAs光电阴极
JP6193171B2 (ja) * 2014-04-11 2017-09-06 株式会社東芝 光検出器
US9460886B2 (en) * 2014-07-22 2016-10-04 Kla-Tencor Corporation High resolution high quantum efficiency electron bombarded CCD or CMOS imaging sensor

Also Published As

Publication number Publication date
KR102826048B1 (ko) 2025-06-27
MY206386A (en) 2024-12-13
IL288262B2 (en) 2025-08-01
FR3096506B1 (fr) 2021-06-11
IL288262B1 (en) 2025-04-01
JP2022534059A (ja) 2022-07-27
BR112021023405A2 (pt) 2022-01-04
CN113994220B (zh) 2024-06-25
EP3966843A1 (fr) 2022-03-16
US20220223364A1 (en) 2022-07-14
CN113994220A (zh) 2022-01-28
IL288262A (en) 2022-01-01
CA3139044A1 (fr) 2020-11-26
JP7506691B2 (ja) 2024-06-26
WO2020234518A1 (fr) 2020-11-26
SG11202112989YA (en) 2021-12-30
KR20220011177A (ko) 2022-01-27
AU2020278915A1 (en) 2021-12-23
RS66402B1 (sr) 2025-02-28
FR3096506A1 (fr) 2020-11-27
US11676790B2 (en) 2023-06-13
EP3966843B1 (fr) 2025-01-08

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