DK3620829T3 - Lysgitter - Google Patents
Lysgitter Download PDFInfo
- Publication number
- DK3620829T3 DK3620829T3 DK18193290.6T DK18193290T DK3620829T3 DK 3620829 T3 DK3620829 T3 DK 3620829T3 DK 18193290 T DK18193290 T DK 18193290T DK 3620829 T3 DK3620829 T3 DK 3620829T3
- Authority
- DK
- Denmark
- Prior art keywords
- light grid
- grid
- light
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01V—GEOPHYSICS; GRAVITATIONAL MEASUREMENTS; DETECTING MASSES OR OBJECTS; TAGS
- G01V8/00—Prospecting or detecting by optical means
- G01V8/10—Detecting, e.g. by using light barriers
- G01V8/20—Detecting, e.g. by using light barriers using multiple transmitters or receivers
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
- H05B45/10—Controlling the intensity of the light
- H05B45/14—Controlling the intensity of the light using electrical feedback from LEDs or from LED modules
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/14—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices
- H01L31/141—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices the semiconductor device sensitive to radiation being without a potential-jump barrier or surface barrier
- H01L31/143—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices the semiconductor device sensitive to radiation being without a potential-jump barrier or surface barrier the light source being a semiconductor device with at least one potential-jump barrier or surface barrier, e.g. light emitting diode
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Life Sciences & Earth Sciences (AREA)
- Geophysics (AREA)
- Light Receiving Elements (AREA)
- Optical Communication System (AREA)
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP18193290.6A EP3620829B1 (de) | 2018-09-07 | 2018-09-07 | Lichtgitter |
Publications (1)
Publication Number | Publication Date |
---|---|
DK3620829T3 true DK3620829T3 (da) | 2022-02-14 |
Family
ID=63528655
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DK18193290.6T DK3620829T3 (da) | 2018-09-07 | 2018-09-07 | Lysgitter |
Country Status (3)
Country | Link |
---|---|
US (1) | US20200084850A1 (da) |
EP (1) | EP3620829B1 (da) |
DK (1) | DK3620829T3 (da) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR3102007B1 (fr) * | 2019-10-14 | 2021-10-29 | Commissariat Energie Atomique | Capteur d’images |
US12050099B2 (en) * | 2020-02-21 | 2024-07-30 | The Boeing Company | Systems and methods for determining space availability in an aircraft |
US10996051B1 (en) * | 2020-02-21 | 2021-05-04 | The Boeing Company | Systems and methods for determining space availability in an aircraft |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4015122A (en) * | 1974-07-12 | 1977-03-29 | Rubinstein Walter M | Photo-electric object detection system |
DE19712828A1 (de) * | 1997-03-26 | 1998-10-15 | Sick Ag | Lichtgitter und Verfahren zu seiner Herstellung |
JP3938099B2 (ja) * | 2002-06-12 | 2007-06-27 | セイコーエプソン株式会社 | マイクロレンズの製造方法、マイクロレンズ、マイクロレンズアレイ板、電気光学装置及び電子機器 |
DE10335263B4 (de) * | 2003-08-01 | 2005-08-11 | Leuze Electronic Gmbh & Co Kg | Optischer Sensor |
US7399421B2 (en) * | 2005-08-02 | 2008-07-15 | International Business Machines Corporation | Injection molded microoptics |
DE102006060062A1 (de) * | 2006-12-19 | 2008-07-03 | Sick Ag | Objektfeststellungssensor |
WO2014188018A1 (es) * | 2013-05-21 | 2014-11-27 | BLASCO WHYTE, Isabel Lena | Integración monolítica de lentes plenópticas sobre sustratos fotosensores |
US9515113B2 (en) * | 2013-08-27 | 2016-12-06 | Rambus Inc. | Optical sensing of nearby scenes with tessellated phase anti-symmetric gratings |
EP2869095B1 (de) * | 2013-10-29 | 2016-12-07 | Sick Ag | Optoelektronischer Sensor |
EP3084346A4 (en) * | 2013-12-19 | 2017-08-23 | 3M Innovative Properties Company | Object sensor |
DE102014115946B4 (de) * | 2014-11-03 | 2020-02-27 | Sick Ag | Kamera und Verfahren zum Lesen von Codes oder Bestimmen von Objekteigenschaften |
DE202016104285U1 (de) * | 2016-08-04 | 2017-11-08 | Sick Ag | Optoelektronischer Sensor zur Erfassung eines Objekts |
-
2018
- 2018-09-07 DK DK18193290.6T patent/DK3620829T3/da active
- 2018-09-07 EP EP18193290.6A patent/EP3620829B1/de active Active
-
2019
- 2019-08-13 US US16/538,971 patent/US20200084850A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
EP3620829B1 (de) | 2022-01-19 |
EP3620829A1 (de) | 2020-03-11 |
US20200084850A1 (en) | 2020-03-12 |
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