PL3748431T3 - Usuwanie zanieczyszczeń ze struktur konstrukcji o wysokim współczynniku - Google Patents

Usuwanie zanieczyszczeń ze struktur konstrukcji o wysokim współczynniku

Info

Publication number
PL3748431T3
PL3748431T3 PL20189018T PL20189018T PL3748431T3 PL 3748431 T3 PL3748431 T3 PL 3748431T3 PL 20189018 T PL20189018 T PL 20189018T PL 20189018 T PL20189018 T PL 20189018T PL 3748431 T3 PL3748431 T3 PL 3748431T3
Authority
PL
Poland
Prior art keywords
high aspect
debris removal
aspect structures
structures
debris
Prior art date
Application number
PL20189018T
Other languages
English (en)
Inventor
Tod Robinson
Original Assignee
Bruker Nano, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US15/011,411 external-priority patent/US10618080B2/en
Application filed by Bruker Nano, Inc. filed Critical Bruker Nano, Inc.
Publication of PL3748431T3 publication Critical patent/PL3748431T3/pl

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0028—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by adhesive surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0014—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by incorporation in a layer which is removed with the contaminants
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
    • G01Q60/00—Particular types of SPM [Scanning Probe Microscopy] or microscopes; Essential components thereof
    • G01Q60/24—AFM [Atomic Force Microscopy] or apparatus therefor, e.g. AFM probes
    • G01Q60/38—Probes, their manufacture, or their related instrumentation, e.g. holders
    • G01Q60/42—Functionalisation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
    • G01Q70/00—General aspects of SPM probes, their manufacture or their related instrumentation, insofar as they are not specially adapted to a single SPM technique covered by group G01Q60/00
    • G01Q70/08—Probe characteristics
    • G01Q70/10—Shape or taper
    • G01Q70/12—Nanotube tips
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
    • G01Q80/00—Applications, other than SPM, of scanning-probe techniques

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Radiology & Medical Imaging (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning In General (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
PL20189018T 2016-01-29 2017-01-26 Usuwanie zanieczyszczeń ze struktur konstrukcji o wysokim współczynniku PL3748431T3 (pl)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US15/011,411 US10618080B2 (en) 2007-09-17 2016-01-29 Debris removal from high aspect structures
PCT/US2017/015062 WO2017132331A1 (en) 2016-01-29 2017-01-26 Debris removal from high aspect structures
EP20189018.3A EP3748431B1 (en) 2016-01-29 2017-01-26 Debris removal from high aspect structures
EP17744875.0A EP3408707A4 (en) 2016-01-29 2017-01-26 RESIDUE REMOVAL FROM STRUCTURES WITH A HIGH ASPECT RATIO

Publications (1)

Publication Number Publication Date
PL3748431T3 true PL3748431T3 (pl) 2022-01-24

Family

ID=59398723

Family Applications (1)

Application Number Title Priority Date Filing Date
PL20189018T PL3748431T3 (pl) 2016-01-29 2017-01-26 Usuwanie zanieczyszczeń ze struktur konstrukcji o wysokim współczynniku

Country Status (6)

Country Link
EP (2) EP3748431B1 (pl)
JP (2) JP7498384B2 (pl)
KR (2) KR20180107184A (pl)
DK (1) DK3748431T3 (pl)
PL (1) PL3748431T3 (pl)
WO (1) WO2017132331A1 (pl)

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5824470A (en) * 1995-05-30 1998-10-20 California Institute Of Technology Method of preparing probes for sensing and manipulating microscopic environments and structures
JP2002329700A (ja) * 2001-04-27 2002-11-15 Sony Corp 表面処理方法
US6817052B2 (en) * 2001-11-09 2004-11-16 Formfactor, Inc. Apparatuses and methods for cleaning test probes
WO2004052489A2 (en) * 2002-12-09 2004-06-24 The University Of North Carolina At Chapel Hill Methods for assembly and sorting of nanostructure-containing materials and related articles
US20050208304A1 (en) * 2003-02-21 2005-09-22 California Institute Of Technology Coatings for carbon nanotubes
JP2005084582A (ja) 2003-09-11 2005-03-31 Sii Nanotechnology Inc フォトマスクのパーティクル除去方法
WO2005068137A1 (en) * 2004-01-05 2005-07-28 Lewis & Clark College Self-cleaning adhesive structure and methods
JP2006351595A (ja) * 2005-06-13 2006-12-28 Hitachi High-Technologies Corp 基板処理装置、基板処理方法、及び基板の製造方法
JP2007298858A (ja) * 2006-05-02 2007-11-15 Hoya Corp マスクブランク用基板の製造方法、マスクブランクの製造方法、及び露光用マスクの製造方法、並びに、マスクブランク、及び露光用マスク
WO2008123908A1 (en) * 2007-02-21 2008-10-16 The Board Of Trustees Of The University Of Illinois Stress micro mechanical test cell, device, system and methods
US8287653B2 (en) * 2007-09-17 2012-10-16 Rave, Llc Debris removal in high aspect structures
KR20090103200A (ko) * 2008-03-27 2009-10-01 주식회사 하이닉스반도체 포토마스크의 파티클 제거방법
JP2009265176A (ja) 2008-04-22 2009-11-12 Toshiba Corp 異物除去方法、異物除去装置および半導体装置の作製方法
US8003283B2 (en) 2008-06-18 2011-08-23 Rave Llc System and a method for improved crosshatch nanomachining of small high aspect three dimensional structures by creating alternating superficial surface channels
US8956463B2 (en) * 2008-10-08 2015-02-17 Shin-Etsu Chemical Co., Ltd. Method for cleaning photomask-related substrate, cleaning method, and cleaning fluid supplying apparatus
JP2010117412A (ja) * 2008-11-11 2010-05-27 Shin-Etsu Chemical Co Ltd フォトマスク関連基板の洗浄方法
JP5236418B2 (ja) * 2008-10-08 2013-07-17 信越化学工業株式会社 洗浄方法および洗浄液供給装置
JP2010117403A (ja) * 2008-11-11 2010-05-27 Shin-Etsu Chemical Co Ltd フォトマスク関連基板の洗浄方法
JP2010170019A (ja) * 2009-01-26 2010-08-05 Toshiba Corp リソグラフィ原版の異物除去方法及びリソグラフィ原版の製造方法
JP2013068786A (ja) * 2011-09-22 2013-04-18 Toppan Printing Co Ltd フォトマスクの洗浄方法
US8605281B2 (en) * 2011-10-13 2013-12-10 Hewlett-Packard Development Company, L.P. Probe having nano-fingers
WO2014125494A1 (en) 2013-02-17 2014-08-21 Carl Zeiss Sms Ltd Surface defect repair by irradiation
WO2015128804A1 (en) * 2014-02-27 2015-09-03 Indian Institute Of Technology Kanpur Nanobrushes and methods of manufacture and use
JP2015227800A (ja) * 2014-05-30 2015-12-17 大日本印刷株式会社 走査型プローブ顕微鏡を用いた異物除去方法および同方法で用いる微小異物除去用探針
JP6245080B2 (ja) * 2014-05-30 2017-12-13 大日本印刷株式会社 走査型プローブ顕微鏡を用いた異物除去方法
JP2016071092A (ja) 2014-09-29 2016-05-09 大日本印刷株式会社 異物除去方法および異物除去装置
JP2016080926A (ja) 2014-10-20 2016-05-16 大日本印刷株式会社 異物除去方法、異物除去装置、及び探針

Also Published As

Publication number Publication date
WO2017132331A1 (en) 2017-08-03
EP3408707A1 (en) 2018-12-05
EP3408707A4 (en) 2019-11-06
KR102306619B1 (ko) 2021-10-01
JP2019506637A (ja) 2019-03-07
EP3748431A1 (en) 2020-12-09
JP7498384B2 (ja) 2024-06-12
KR20200096673A (ko) 2020-08-12
DK3748431T3 (da) 2021-12-06
JP2023022833A (ja) 2023-02-15
KR20180107184A (ko) 2018-10-01
JP7495087B2 (ja) 2024-06-04
EP3748431B1 (en) 2021-09-08

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