PL365274A1 - Zespół zasilania diody laserowej - Google Patents

Zespół zasilania diody laserowej

Info

Publication number
PL365274A1
PL365274A1 PL01365274A PL36527401A PL365274A1 PL 365274 A1 PL365274 A1 PL 365274A1 PL 01365274 A PL01365274 A PL 01365274A PL 36527401 A PL36527401 A PL 36527401A PL 365274 A1 PL365274 A1 PL 365274A1
Authority
PL
Poland
Prior art keywords
power supply
supply unit
laser diode
diode power
laser
Prior art date
Application number
PL01365274A
Other languages
English (en)
Inventor
Wei Gao
Original Assignee
Axcel Photonics, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Axcel Photonics, Inc. filed Critical Axcel Photonics, Inc.
Publication of PL365274A1 publication Critical patent/PL365274A1/pl

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/02345—Wire-bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02375—Positioning of the laser chips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02407—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
    • H01S5/02415—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling by using a thermo-electric cooler [TEC], e.g. Peltier element
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02476—Heat spreaders, i.e. improving heat flow between laser chip and heat dissipating elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04254—Electrodes, e.g. characterised by the structure characterised by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
PL01365274A 2001-06-05 2001-06-08 Zespół zasilania diody laserowej PL365274A1 (pl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/874,501 US6870866B2 (en) 2001-06-05 2001-06-05 Powerpack laser diode assemblies

Publications (1)

Publication Number Publication Date
PL365274A1 true PL365274A1 (pl) 2004-12-27

Family

ID=25363931

Family Applications (1)

Application Number Title Priority Date Filing Date
PL01365274A PL365274A1 (pl) 2001-06-05 2001-06-08 Zespół zasilania diody laserowej

Country Status (7)

Country Link
US (1) US6870866B2 (pl)
EP (1) EP1396056A2 (pl)
JP (1) JP2005505914A (pl)
CA (1) CA2449884A1 (pl)
PL (1) PL365274A1 (pl)
TW (1) TW527759B (pl)
WO (1) WO2002099940A2 (pl)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6822879B2 (en) * 2002-08-06 2004-11-23 Emcore Corporation Embedded electromagnetic interference shield
WO2005011072A1 (en) * 2003-06-24 2005-02-03 Emcore Corporation Mechanical protection for semiconductor edge-emitting ridge waveguide lasers
JP4696522B2 (ja) * 2003-10-14 2011-06-08 日亜化学工業株式会社 半導体レーザ素子
DE102004038405A1 (de) * 2004-08-07 2006-03-16 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Quantenkaskadenlaser mit reduzierter Verlustleistung
GB2427752A (en) * 2005-06-28 2007-01-03 Bookham Technology Plc High power semiconductor laser diode
WO2007065455A1 (en) * 2005-12-06 2007-06-14 Pirelli & C. S.P.A. Passive phase control in an external cavity laser
US8259765B2 (en) * 2006-12-06 2012-09-04 Google Inc. Passive phase control in an external cavity laser
US9368935B2 (en) * 2008-04-28 2016-06-14 Northrop Grumman Systems Corporation Method for mode control in multimode semiconductor waveguide lasers
US10833474B2 (en) * 2017-08-02 2020-11-10 Nlight, Inc. CTE-matched silicon-carbide submount with high thermal conductivity contacts
CN110556705A (zh) * 2018-06-04 2019-12-10 李训福 激光二极体表面安装结构
JP7420625B2 (ja) * 2020-03-30 2024-01-23 古河電気工業株式会社 サブマウント、発光装置、および光学モジュール

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4714953A (en) * 1986-05-12 1987-12-22 International Business Machines Corporation Welded wire cooling
JPH02164089A (ja) * 1988-12-19 1990-06-25 Nec Corp 半導体レーザ素子
US5177500A (en) * 1991-09-11 1993-01-05 Eastman Kodak Company LED array printhead with thermally coupled arrays
US5608267A (en) * 1992-09-17 1997-03-04 Olin Corporation Molded plastic semiconductor package including heat spreader
JPH09138326A (ja) * 1995-11-14 1997-05-27 Furukawa Electric Co Ltd:The 光半導体モジュール
JP3339369B2 (ja) * 1997-05-30 2002-10-28 株式会社デンソー レーザダイオード
JPH11121871A (ja) * 1997-10-15 1999-04-30 Fujitsu Ltd ペルチェ素子を有するモジュール
US6072815A (en) * 1998-02-27 2000-06-06 Litton Systems, Inc. Microlaser submount assembly and associates packaging method
DE59901985D1 (de) 1998-05-26 2002-08-14 Infineon Technologies Ag Hochfrequenz-Lasermodul und Verfahren zur Herstellung desselben
US6335548B1 (en) * 1999-03-15 2002-01-01 Gentex Corporation Semiconductor radiation emitter package
US6368890B1 (en) * 1999-05-05 2002-04-09 Mitel Semiconductor Ab Top contact VCSEL with monitor
US6188130B1 (en) * 1999-06-14 2001-02-13 Advanced Technology Interconnect Incorporated Exposed heat spreader with seal ring
EP1079484A3 (en) 1999-08-24 2002-10-30 Mitsui Chemicals, Inc. Semiconductor laser device, semiconductor laser module, and fiber module
TW454314B (en) * 2000-05-30 2001-09-11 Gen Semiconductor Of Taiwan Lt Semiconductor device packaging assembly and method for manufacturing the same

Also Published As

Publication number Publication date
JP2005505914A (ja) 2005-02-24
US20020181526A1 (en) 2002-12-05
TW527759B (en) 2003-04-11
WO2002099940A2 (en) 2002-12-12
EP1396056A2 (en) 2004-03-10
US6870866B2 (en) 2005-03-22
WO2002099940A3 (en) 2003-09-12
CA2449884A1 (en) 2002-12-12

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