PL3460858T3 - Sposób wytwarzania kolumnowych struktur elektroluminescencyjnych UV i struktury wytworzone tym sposobem - Google Patents

Sposób wytwarzania kolumnowych struktur elektroluminescencyjnych UV i struktury wytworzone tym sposobem

Info

Publication number
PL3460858T3
PL3460858T3 PL17461607T PL17461607T PL3460858T3 PL 3460858 T3 PL3460858 T3 PL 3460858T3 PL 17461607 T PL17461607 T PL 17461607T PL 17461607 T PL17461607 T PL 17461607T PL 3460858 T3 PL3460858 T3 PL 3460858T3
Authority
PL
Poland
Prior art keywords
structures
emitting
producing light
column
produced
Prior art date
Application number
PL17461607T
Other languages
English (en)
Inventor
Mariusz Rudziński
Original Assignee
Instytut Technologii Materialów Elektronicznych
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Instytut Technologii Materialów Elektronicznych filed Critical Instytut Technologii Materialów Elektronicznych
Publication of PL3460858T3 publication Critical patent/PL3460858T3/pl

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0137—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/815—Bodies having stress relaxation structures, e.g. buffer layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/821—Bodies characterised by their shape, e.g. curved or truncated substrates of the light-emitting regions, e.g. non-planar junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
PL17461607T 2017-09-20 2017-09-20 Sposób wytwarzania kolumnowych struktur elektroluminescencyjnych UV i struktury wytworzone tym sposobem PL3460858T3 (pl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP17461607.8A EP3460858B1 (en) 2017-09-20 2017-09-20 A method for producing light-emitting uv column structures and the structures produced using this method

Publications (1)

Publication Number Publication Date
PL3460858T3 true PL3460858T3 (pl) 2020-11-16

Family

ID=60327264

Family Applications (1)

Application Number Title Priority Date Filing Date
PL17461607T PL3460858T3 (pl) 2017-09-20 2017-09-20 Sposób wytwarzania kolumnowych struktur elektroluminescencyjnych UV i struktury wytworzone tym sposobem

Country Status (4)

Country Link
US (1) US10749073B2 (pl)
EP (1) EP3460858B1 (pl)
ES (1) ES2808992T3 (pl)
PL (1) PL3460858T3 (pl)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ES2808992T3 (es) * 2017-09-20 2021-03-02 Instytut Tech Materialow Elektronicznych Un procedimiento para producir estructuras de columna UV que emiten luz y las estructuras producidas usando este procedimiento
EP3731260A4 (en) * 2017-12-19 2021-12-22 Sumco Corporation METHOD OF MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1501118B1 (en) * 1999-03-17 2009-10-07 Mitsubishi Chemical Corporation Semiconductor base and its manufacturing method, and semiconductor crystal manufacturing method
JP3556916B2 (ja) * 2000-09-18 2004-08-25 三菱電線工業株式会社 半導体基材の製造方法
SG170094A1 (en) 2006-03-10 2011-04-29 Stc Unm Pulsed growth of gan nanowires and applications in group iii nitride semiconductor substrate materials and devices
US8716049B2 (en) * 2010-02-23 2014-05-06 Applied Materials, Inc. Growth of group III-V material layers by spatially confined epitaxy
KR102141815B1 (ko) * 2012-11-02 2020-08-06 리켄 자외선 발광 다이오드 및 그 제조 방법
US9818826B2 (en) * 2013-10-21 2017-11-14 Sensor Electronic Technology, Inc. Heterostructure including a composite semiconductor layer
KR102188499B1 (ko) 2014-07-11 2020-12-09 삼성전자주식회사 나노구조 반도체 발광소자
JP6375890B2 (ja) * 2014-11-18 2018-08-22 日亜化学工業株式会社 窒化物半導体素子及びその製造方法
DE102014117892A1 (de) 2014-12-04 2016-06-09 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement sowie optoelektronisches Bauteil
KR102328457B1 (ko) * 2015-05-29 2021-11-18 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광소자, 발광소자 제조방법 및 이를 구비하는 조명시스템
JP6642805B2 (ja) * 2016-12-28 2020-02-12 豊田合成株式会社 半導体構造体の製造方法および半導体素子の製造方法
JP6686876B2 (ja) * 2016-12-28 2020-04-22 豊田合成株式会社 半導体構造体および半導体素子
ES2808992T3 (es) * 2017-09-20 2021-03-02 Instytut Tech Materialow Elektronicznych Un procedimiento para producir estructuras de columna UV que emiten luz y las estructuras producidas usando este procedimiento

Also Published As

Publication number Publication date
EP3460858A1 (en) 2019-03-27
US20190140135A1 (en) 2019-05-09
ES2808992T3 (es) 2021-03-02
US10749073B2 (en) 2020-08-18
EP3460858B1 (en) 2020-04-29

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