PL3236718T3 - Urządzenie będące źródłem energii o częstotliwości radiowej i źródło energii do podwójnych katod - Google Patents

Urządzenie będące źródłem energii o częstotliwości radiowej i źródło energii do podwójnych katod

Info

Publication number
PL3236718T3
PL3236718T3 PL15881133T PL15881133T PL3236718T3 PL 3236718 T3 PL3236718 T3 PL 3236718T3 PL 15881133 T PL15881133 T PL 15881133T PL 15881133 T PL15881133 T PL 15881133T PL 3236718 T3 PL3236718 T3 PL 3236718T3
Authority
PL
Poland
Prior art keywords
power source
radio frequency
source device
frequency power
dual cathodes
Prior art date
Application number
PL15881133T
Other languages
English (en)
Inventor
Itsuo Yuzurihara
Shinichi Kodama
Toshiyuki Adachi
Original Assignee
Kyosan Electric Mfg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyosan Electric Mfg filed Critical Kyosan Electric Mfg
Publication of PL3236718T3 publication Critical patent/PL3236718T3/pl

Links

Classifications

    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00Generating plasma; Handling plasma
    • H05H1/24Generating plasma
    • H05H1/46Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/32174Circuits specially adapted for controlling the RF discharge
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32532Electrodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411Constructional aspects of the reactor
    • H01J37/3438Electrodes other than cathode
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411Constructional aspects of the reactor
    • H01J37/3444Associated circuits
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M5/00Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases
    • H02M5/02Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases without intermediate conversion into dc
    • H02M5/04Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases without intermediate conversion into dc by static converters
    • H02M5/06Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases without intermediate conversion into dc by static converters using impedances
    • H02M5/08Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases without intermediate conversion into dc by static converters using impedances using capacitors only
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M5/00Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases
    • H02M5/40Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases with intermediate conversion into dc
    • H02M5/42Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases with intermediate conversion into dc by static converters
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/02Conversion of ac power input into dc power output without possibility of reversal
    • H02M7/04Conversion of ac power input into dc power output without possibility of reversal by static converters
    • H02M7/12Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H2242/00Auxiliary systems
    • H05H2242/20Power circuits
    • H05H2242/24Radiofrequency or microwave generators

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Plasma Technology (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
  • Rectifiers (AREA)
  • Inverter Devices (AREA)
  • Physical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
PL15881133T 2015-02-04 2015-02-20 Urządzenie będące źródłem energii o częstotliwości radiowej i źródło energii do podwójnych katod PL3236718T3 (pl)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2015020482A JP5788616B1 (ja) 2015-02-04 2015-02-04 高周波電源装置、及びデュアルカソード用電源
EP15881133.1A EP3236718B1 (en) 2015-02-04 2015-02-20 Radio frequency power source device, and power source for dual cathodes
PCT/JP2015/054727 WO2016125316A1 (ja) 2015-02-04 2015-02-20 高周波電源装置、及びデュアルカソード用電源

Publications (1)

Publication Number Publication Date
PL3236718T3 true PL3236718T3 (pl) 2019-10-31

Family

ID=54346079

Family Applications (1)

Application Number Title Priority Date Filing Date
PL15881133T PL3236718T3 (pl) 2015-02-04 2015-02-20 Urządzenie będące źródłem energii o częstotliwości radiowej i źródło energii do podwójnych katod

Country Status (7)

Country Link
US (1) US10244615B2 (pl)
EP (1) EP3236718B1 (pl)
JP (1) JP5788616B1 (pl)
KR (1) KR101841409B1 (pl)
CN (1) CN107211521B (pl)
PL (1) PL3236718T3 (pl)
WO (1) WO2016125316A1 (pl)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111725091A (zh) * 2019-03-22 2020-09-29 北京北方华创微电子装备有限公司 优化工艺流程的方法及装置、存储介质和半导体处理设备
KR102242234B1 (ko) * 2019-05-08 2021-04-20 주식회사 뉴파워 프라즈마 고주파 제너레이터 및 그의 동작 방법

Family Cites Families (18)

* Cited by examiner, † Cited by third party
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JP2847425B2 (ja) * 1990-06-25 1999-01-20 国華 王 キャパシタ交流降圧回路
JP3203464B2 (ja) * 1994-06-11 2001-08-27 サンケン電気株式会社 交流電力変換装置
US6395128B2 (en) * 1998-02-19 2002-05-28 Micron Technology, Inc. RF powered plasma enhanced chemical vapor deposition reactor and methods of effecting plasma enhanced chemical vapor deposition
US7180758B2 (en) * 1999-07-22 2007-02-20 Mks Instruments, Inc. Class E amplifier with inductive clamp
JP3678098B2 (ja) 2000-01-21 2005-08-03 松下電器産業株式会社 電源装置とそれを用いた電子機器
JP3641785B2 (ja) * 2002-08-09 2005-04-27 株式会社京三製作所 プラズマ発生用電源装置
US7502240B2 (en) * 2004-07-27 2009-03-10 Silicon Laboratories Inc. Distributed power supply system with separate SYNC control for controlling remote digital DC/DC converters
JP2006134603A (ja) 2004-11-02 2006-05-25 Bridgestone Corp 触媒構造体及びそれを用いた固体高分子型燃料電池用膜電極接合体
CN101127486A (zh) 2006-07-31 2008-02-20 富士电机控股株式会社 电源电路及其控制方法
US20080059321A1 (en) * 2006-08-31 2008-03-06 Zucker Brian T Online Sales Method for Information Handling Systems and Related Peripherals
JP4790826B2 (ja) * 2009-03-10 2011-10-12 株式会社日立製作所 電源装置およびハードディスク装置
JP5301340B2 (ja) 2009-04-16 2013-09-25 住友重機械工業株式会社 スパッタリング装置および成膜方法
US9111733B2 (en) * 2009-08-31 2015-08-18 Novellus Systems Inc. Plasma ignition performance for low pressure physical vapor deposition (PVD) processes
DE102010038605B4 (de) 2010-07-29 2012-06-14 Hüttinger Elektronik Gmbh + Co. Kg Zündschaltung zum Zünden eines mit Wechselleistung gespeisten Plasmas
JP5887081B2 (ja) * 2011-07-26 2016-03-16 ローム株式会社 Ac/dcコンバータおよびそれを用いたac電源アダプタおよび電子機器
WO2013096956A1 (en) * 2011-12-23 2013-06-27 University Of Florida Research Foundation, Inc. Method and apparatus for providing power
US9402128B2 (en) * 2012-04-11 2016-07-26 James K. Waller, Jr. Adaptive rail power amplifier technology
JP5578745B1 (ja) * 2013-08-22 2014-08-27 株式会社京三製作所 D級増幅器

Also Published As

Publication number Publication date
KR20170097217A (ko) 2017-08-25
EP3236718B1 (en) 2019-05-08
CN107211521B (zh) 2018-05-04
CN107211521A (zh) 2017-09-26
KR101841409B1 (ko) 2018-03-22
WO2016125316A1 (ja) 2016-08-11
JP5788616B1 (ja) 2015-10-07
EP3236718A4 (en) 2018-03-14
US10244615B2 (en) 2019-03-26
US20180249570A1 (en) 2018-08-30
EP3236718A1 (en) 2017-10-25
JP2016144371A (ja) 2016-08-08

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