PL2915902T3 - Źródło plazmy dla plazmowego urządzenia CVD i sposób wytwarzania przedmiotu przy użyciu źródła plazmy - Google Patents
Źródło plazmy dla plazmowego urządzenia CVD i sposób wytwarzania przedmiotu przy użyciu źródła plazmyInfo
- Publication number
- PL2915902T3 PL2915902T3 PL13850259T PL13850259T PL2915902T3 PL 2915902 T3 PL2915902 T3 PL 2915902T3 PL 13850259 T PL13850259 T PL 13850259T PL 13850259 T PL13850259 T PL 13850259T PL 2915902 T3 PL2915902 T3 PL 2915902T3
- Authority
- PL
- Poland
- Prior art keywords
- plasma
- plasma source
- article
- manufacturing
- cvd apparatus
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32568—Relative arrangement or disposition of electrodes; moving means
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
- C23C16/402—Silicon dioxide
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32577—Electrical connecting means
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
- H01J2237/3321—CVD [Chemical Vapor Deposition]
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
- H05H1/4645—Radiofrequency discharges
- H05H1/466—Radiofrequency discharges using capacitive coupling means, e.g. electrodes
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H2242/00—Auxiliary systems
- H05H2242/20—Power circuits
- H05H2242/22—DC, AC or pulsed generators
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Electromagnetism (AREA)
- Inorganic Chemistry (AREA)
- Plasma Technology (AREA)
- Chemical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012242663 | 2012-11-02 | ||
| PCT/JP2013/078735 WO2014069309A1 (ja) | 2012-11-02 | 2013-10-23 | プラズマｃｖｄ装置用のプラズマ源およびこのプラズマ源を用いた物品の製造方法 |
| EP13850259.6A EP2915902B1 (en) | 2012-11-02 | 2013-10-23 | Plasma source for a plasma cvd apparatus and a manufacturing method of an article using the plasma source |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| PL2915902T3 true PL2915902T3 (pl) | 2020-08-24 |
Family
ID=50627218
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PL13850259T PL2915902T3 (pl) | 2012-11-02 | 2013-10-23 | Źródło plazmy dla plazmowego urządzenia CVD i sposób wytwarzania przedmiotu przy użyciu źródła plazmy |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US9922805B2 (pl) |
| EP (1) | EP2915902B1 (pl) |
| JP (1) | JPWO2014069309A1 (pl) |
| ES (1) | ES2781775T3 (pl) |
| HU (1) | HUE049078T2 (pl) |
| PL (1) | PL2915902T3 (pl) |
| WO (1) | WO2014069309A1 (pl) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EA020763B9 (ru) | 2008-08-04 | 2015-05-29 | Эй-Джи-Си Флет Гласс Норт Эмерике, Инк. | Источник плазмы и способы нанесения тонкопленочных покрытий с использованием плазменно-химического осаждения из газовой фазы |
| KR102365939B1 (ko) | 2014-12-05 | 2022-02-22 | 에이지씨 플랫 글래스 노스 아메리카, 인코퍼레이티드 | 거대-입자 감소 코팅을 활용하는 플라즈마 소스 및 박막 코팅의 증착과 표면의 개질을 위해 거대-입자 감소 코팅을 활용하는 플라즈마 소스의 사용 방법 |
| CN107852805B (zh) | 2014-12-05 | 2020-10-16 | Agc玻璃欧洲公司 | 空心阴极等离子体源 |
| JP2018028109A (ja) * | 2014-12-22 | 2018-02-22 | 旭硝子株式会社 | プラズマｃｖｄ装置 |
| KR20180095530A (ko) * | 2015-11-16 | 2018-08-27 | 에이지씨 플랫 글래스 노스 아메리카, 인코퍼레이티드 | 다중 위상 교류 또는 펄스 전류에 의해 구동되는 플라즈마 장치 및 플라즈마 생성 방법 |
| US9721764B2 (en) | 2015-11-16 | 2017-08-01 | Agc Flat Glass North America, Inc. | Method of producing plasma by multiple-phase alternating or pulsed electrical current |
| US9721765B2 (en) | 2015-11-16 | 2017-08-01 | Agc Flat Glass North America, Inc. | Plasma device driven by multiple-phase alternating or pulsed electrical current |
| US10573499B2 (en) | 2015-12-18 | 2020-02-25 | Agc Flat Glass North America, Inc. | Method of extracting and accelerating ions |
| US10242846B2 (en) | 2015-12-18 | 2019-03-26 | Agc Flat Glass North America, Inc. | Hollow cathode ion source |
| CN113727483B (zh) * | 2021-09-02 | 2022-12-20 | 合肥爱普利等离子体有限责任公司 | 一种多电极交流电弧放电装置、设备及交流电源 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5057185A (en) * | 1990-09-27 | 1991-10-15 | Consortium For Surface Processing, Inc. | Triode plasma reactor with phase modulated plasma control |
| JP3586197B2 (ja) | 2000-03-23 | 2004-11-10 | シャープ株式会社 | 薄膜形成用プラズマ成膜装置 |
| US7411352B2 (en) | 2002-09-19 | 2008-08-12 | Applied Process Technologies, Inc. | Dual plasma beam sources and method |
| JP4875528B2 (ja) * | 2007-03-29 | 2012-02-15 | 三菱重工業株式会社 | 薄膜形成装置およびプラズマ発生方法 |
| EA020763B9 (ru) | 2008-08-04 | 2015-05-29 | Эй-Джи-Си Флет Гласс Норт Эмерике, Инк. | Источник плазмы и способы нанесения тонкопленочных покрытий с использованием плазменно-химического осаждения из газовой фазы |
| GB2466836A (en) | 2009-01-12 | 2010-07-14 | Phive Plasma Technologies Ltd | Plasma source tile electrode |
| EP2256782B1 (en) | 2009-05-25 | 2018-08-29 | Applied Materials, Inc. | Plasma deposition source and method for depositing thin films |
| WO2012000852A1 (de) | 2010-06-28 | 2012-01-05 | Emitec Gesellschaft Für Emissionstechnologie Mbh | Vorrichtung zur partikelabscheidung im abgasrückführsystem |
| JP5631088B2 (ja) * | 2010-07-15 | 2014-11-26 | 国立大学法人東北大学 | プラズマ処理装置及びプラズマ処理方法 |
| US20140042123A1 (en) | 2012-02-23 | 2014-02-13 | Tohoku University | Plasma processing apparatus and plasma processing method |
-
2013
- 2013-10-23 WO PCT/JP2013/078735 patent/WO2014069309A1/ja active Application Filing
- 2013-10-23 EP EP13850259.6A patent/EP2915902B1/en active Active
- 2013-10-23 ES ES13850259T patent/ES2781775T3/es active Active
- 2013-10-23 HU HUE13850259A patent/HUE049078T2/hu unknown
- 2013-10-23 PL PL13850259T patent/PL2915902T3/pl unknown
- 2013-10-23 JP JP2014544453A patent/JPWO2014069309A1/ja not_active Withdrawn
-
2015
- 2015-04-29 US US14/699,249 patent/US9922805B2/en active Active
-
2018
- 2018-02-01 US US15/886,486 patent/US10204767B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| ES2781775T3 (es) | 2020-09-07 |
| US20180158655A1 (en) | 2018-06-07 |
| JPWO2014069309A1 (ja) | 2016-09-08 |
| HUE049078T2 (hu) | 2020-09-28 |
| EP2915902A1 (en) | 2015-09-09 |
| US20150235814A1 (en) | 2015-08-20 |
| EP2915902B1 (en) | 2020-02-19 |
| US9922805B2 (en) | 2018-03-20 |
| EP2915902A4 (en) | 2016-08-03 |
| US10204767B2 (en) | 2019-02-12 |
| WO2014069309A1 (ja) | 2014-05-08 |
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