PL200139A1 - Homogeneous cell matrix structure - Google Patents

Homogeneous cell matrix structure

Info

Publication number
PL200139A1
PL200139A1 PL20013977A PL20013977A PL200139A1 PL 200139 A1 PL200139 A1 PL 200139A1 PL 20013977 A PL20013977 A PL 20013977A PL 20013977 A PL20013977 A PL 20013977A PL 200139 A1 PL200139 A1 PL 200139A1
Authority
PL
Poland
Prior art keywords
cell matrix
homogeneous cell
homogeneous
matrix
Prior art date
Application number
PL20013977A
Other languages
Polish (pl)
Other versions
PL109105B1 (en
Inventor
Valerij F Gusev
Gennadij N Ivanov
Genrich I Krengel
Vjaceslav J Kremlev
Mansur Z Sagivaleev
Jurij I Scetianin
Azat U Jarmuchametov
Original Assignee
Valerij F Gusev
Gennadij N Ivanov
Genrich I Krengel
Kremlev V J
Mansur Z Sagivaleev
Jurij I Scetianin
Azat U Jarmuchametov
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to SU762398612A priority Critical patent/SU624295A1/en
Application filed by Valerij F Gusev, Gennadij N Ivanov, Genrich I Krengel, Kremlev V J, Mansur Z Sagivaleev, Jurij I Scetianin, Azat U Jarmuchametov filed Critical Valerij F Gusev
Publication of PL200139A1 publication Critical patent/PL200139A1/en
Publication of PL109105B1 publication Critical patent/PL109105B1/en

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing, power reduction
    • G11C11/414Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing, power reduction for memory cells of the bipolar type
PL20013977A 1976-08-17 1977-08-09 Homogenous matrix structure cell PL109105B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
SU762398612A SU624295A1 (en) 1976-08-17 1976-08-17 Storage cell for homogeneous matrix structure

Publications (2)

Publication Number Publication Date
PL200139A1 true PL200139A1 (en) 1978-04-24
PL109105B1 PL109105B1 (en) 1980-05-31

Family

ID=20674913

Family Applications (1)

Application Number Title Priority Date Filing Date
PL20013977A PL109105B1 (en) 1976-08-17 1977-08-09 Homogenous matrix structure cell

Country Status (10)

Country Link
JP (1) JPS5341139A (en)
BG (1) BG30596A1 (en)
DD (1) DD132688A1 (en)
DE (1) DE2736061C2 (en)
FR (1) FR2362471B1 (en)
GB (1) GB1545338A (en)
IN (1) IN147561B (en)
PL (1) PL109105B1 (en)
RO (1) RO73483A (en)
SU (1) SU624295A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60226090A (en) * 1984-04-25 1985-11-11 Nec Corp Static random access memory circuit

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3638204A (en) * 1969-12-19 1972-01-25 Ibm Semiconductive cell for a storage having a plurality of simultaneously accessible locations
US3675218A (en) * 1970-01-15 1972-07-04 Ibm Independent read-write monolithic memory array

Also Published As

Publication number Publication date
DE2736061A1 (en) 1978-02-23
FR2362471B1 (en) 1980-07-11
SU624295A1 (en) 1978-09-15
IN147561B (en) 1980-04-12
GB1545338A (en) 1979-05-10
BG30596A1 (en) 1981-07-15
JPS5341139A (en) 1978-04-14
PL109105B1 (en) 1980-05-31
RO73483A (en) 1981-11-04
DD132688A1 (en) 1978-10-18
FR2362471A1 (en) 1978-03-17
DE2736061C2 (en) 1982-05-06

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