DD132688A1 - CELL OF HOMOGENEOUS MATRIX STRUCTURE - Google Patents

CELL OF HOMOGENEOUS MATRIX STRUCTURE

Info

Publication number
DD132688A1
DD132688A1 DD20053677A DD20053677A DD132688A1 DD 132688 A1 DD132688 A1 DD 132688A1 DD 20053677 A DD20053677 A DD 20053677A DD 20053677 A DD20053677 A DD 20053677A DD 132688 A1 DD132688 A1 DD 132688A1
Authority
DD
German Democratic Republic
Prior art keywords
cell
matrix structure
homogeneous matrix
homogeneous
matrix
Prior art date
Application number
DD20053677A
Other languages
German (de)
Inventor
Valery F Gusev
Gennady N Ivanov
Vladimir Y Kontarev
Genrikh I Krengel
Vyacheslav Y Kremlev
Masur Z Shagivaleev
Jury I Schetini
Azat U Yarmukhametov
Original Assignee
Gusev Valery
Ivanov Gennadij N
Kontarev Vladimir Ya
Krengel Genrikh
Vyacheslav Y Kremlev
Masur Z Shagivaleev
Jury I Schetini
Jarmuchametov Azat U
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gusev Valery, Ivanov Gennadij N, Kontarev Vladimir Ya, Krengel Genrikh, Vyacheslav Y Kremlev, Masur Z Shagivaleev, Jury I Schetini, Jarmuchametov Azat U filed Critical Gusev Valery
Publication of DD132688A1 publication Critical patent/DD132688A1/en

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/414Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the bipolar type
DD20053677A 1976-08-17 1977-08-11 CELL OF HOMOGENEOUS MATRIX STRUCTURE DD132688A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SU762398612A SU624295A1 (en) 1976-08-17 1976-08-17 Storage cell for homogeneous matrix structure

Publications (1)

Publication Number Publication Date
DD132688A1 true DD132688A1 (en) 1978-10-18

Family

ID=20674913

Family Applications (1)

Application Number Title Priority Date Filing Date
DD20053677A DD132688A1 (en) 1976-08-17 1977-08-11 CELL OF HOMOGENEOUS MATRIX STRUCTURE

Country Status (10)

Country Link
JP (1) JPS5341139A (en)
BG (1) BG30596A1 (en)
DD (1) DD132688A1 (en)
DE (1) DE2736061C2 (en)
FR (1) FR2362471A1 (en)
GB (1) GB1545338A (en)
IN (1) IN147561B (en)
PL (1) PL109105B1 (en)
RO (1) RO73483A (en)
SU (1) SU624295A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60226090A (en) * 1984-04-25 1985-11-11 Nec Corp Static random access memory circuit

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3643236A (en) * 1969-12-19 1972-02-15 Ibm Storage having a plurality of simultaneously accessible locations
US3675218A (en) * 1970-01-15 1972-07-04 Ibm Independent read-write monolithic memory array

Also Published As

Publication number Publication date
IN147561B (en) 1980-04-12
PL200139A1 (en) 1978-04-24
JPS5341139A (en) 1978-04-14
SU624295A1 (en) 1978-09-15
FR2362471B1 (en) 1980-07-11
BG30596A1 (en) 1981-07-15
DE2736061C2 (en) 1982-05-06
RO73483A (en) 1981-11-04
GB1545338A (en) 1979-05-10
PL109105B1 (en) 1980-05-31
DE2736061A1 (en) 1978-02-23
FR2362471A1 (en) 1978-03-17

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DD132688A1 (en) CELL OF HOMOGENEOUS MATRIX STRUCTURE