NO971201L - Deformasjonssensor som benytter den piezoresistive effekt, og fremgangsmåte til dens fremstilling - Google Patents

Deformasjonssensor som benytter den piezoresistive effekt, og fremgangsmåte til dens fremstilling

Info

Publication number
NO971201L
NO971201L NO971201A NO971201A NO971201L NO 971201 L NO971201 L NO 971201L NO 971201 A NO971201 A NO 971201A NO 971201 A NO971201 A NO 971201A NO 971201 L NO971201 L NO 971201L
Authority
NO
Norway
Prior art keywords
deformation sensor
preparation
piezoresistive effect
sensor utilizing
sensor
Prior art date
Application number
NO971201A
Other languages
English (en)
Norwegian (no)
Other versions
NO971201D0 (no
Inventor
Bernard Diem
Sylvie Voillet-Bosson
Patricia Touret
Original Assignee
Commissariat Energie Atomique
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat Energie Atomique filed Critical Commissariat Energie Atomique
Publication of NO971201D0 publication Critical patent/NO971201D0/no
Publication of NO971201L publication Critical patent/NO971201L/no

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
    • G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
    • G01L9/0055—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements bonded on a diaphragm
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/159—Strain gauges
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/973—Substrate orientation

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Pressure Sensors (AREA)
  • Measuring Fluid Pressure (AREA)
  • Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
NO971201A 1996-03-28 1997-03-14 Deformasjonssensor som benytter den piezoresistive effekt, og fremgangsmåte til dens fremstilling NO971201L (no)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9603885A FR2746919B1 (fr) 1996-03-28 1996-03-28 Capteur a jauge de contrainte utilisant l'effet piezoresistif et son procede de fabrication

Publications (2)

Publication Number Publication Date
NO971201D0 NO971201D0 (no) 1997-03-14
NO971201L true NO971201L (no) 1997-09-29

Family

ID=9490655

Family Applications (1)

Application Number Title Priority Date Filing Date
NO971201A NO971201L (no) 1996-03-28 1997-03-14 Deformasjonssensor som benytter den piezoresistive effekt, og fremgangsmåte til dens fremstilling

Country Status (6)

Country Link
US (1) US6001666A (de)
EP (1) EP0798548B1 (de)
JP (1) JPH1022510A (de)
DE (1) DE69713433T2 (de)
FR (1) FR2746919B1 (de)
NO (1) NO971201L (de)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998009145A1 (de) * 1996-08-27 1998-03-05 Robert Bosch Gmbh Verfahren zur herstellung von drucksensoren
FR2773261B1 (fr) 1997-12-30 2000-01-28 Commissariat Energie Atomique Procede pour le transfert d'un film mince comportant une etape de creation d'inclusions
EP1130631A1 (de) * 2000-02-29 2001-09-05 STMicroelectronics S.r.l. Herstellungsverfahren eines vergrabenen Hohlraumes in einer Halbleiterscheibe
FR2827041B1 (fr) * 2001-07-03 2003-12-12 Commissariat Energie Atomique Dispositif piezoresistif et procedes de fabrication de ce dispositif
US6912759B2 (en) * 2001-07-20 2005-07-05 Rosemount Aerospace Inc. Method of manufacturing a thin piezo resistive pressure sensor
DE10135806A1 (de) 2001-07-23 2003-02-13 Zeiss Carl Spiegel zur Reflexion elektromagnetischer Strahlung und Beleuchtungs- bzw. Abbildungsverfahren unter Einsatz desselben
US6793830B2 (en) * 2002-09-27 2004-09-21 Medtronic, Inc. Method for forming a microstructure from a monocrystalline substrate
US6739199B1 (en) 2003-03-10 2004-05-25 Hewlett-Packard Development Company, L.P. Substrate and method of forming substrate for MEMS device with strain gage
FR2857953B1 (fr) * 2003-07-21 2006-01-13 Commissariat Energie Atomique Structure empilee, et procede pour la fabriquer
US7160791B2 (en) * 2004-08-30 2007-01-09 Miradia Inc. Batch process and device for forming spacer structures for packaging optical reflection devices
US7317234B2 (en) * 2005-07-20 2008-01-08 Douglas G Marsh Means of integrating a microphone in a standard integrated circuit process
TWI289879B (en) * 2005-09-30 2007-11-11 Touch Micro System Tech Method of fabricating pressure sensor
DE102007010913A1 (de) * 2007-03-05 2008-09-11 Endress + Hauser Gmbh + Co. Kg Drucksensor
US7412892B1 (en) 2007-06-06 2008-08-19 Measurement Specialties, Inc. Method of making pressure transducer and apparatus
US7647837B2 (en) * 2007-08-29 2010-01-19 Honeywell International Inc. Active temperature differential compensation for strain gage based sensors
JP2010156610A (ja) * 2008-12-26 2010-07-15 Kyocera Corp 加速度センサ素子及び加速度センサ
US8569851B2 (en) * 2010-06-18 2013-10-29 General Electric Company Sensor and method for fabricating the same
DE102012208492A1 (de) * 2012-05-22 2013-11-28 Continental Teves Ag & Co. Ohg Dehnmessstreifenanordnung
CN103926028B (zh) * 2014-03-25 2016-05-18 慧石（上海）测控科技有限公司 一种应变片的结构设计及制作工艺
DE102015118346A1 (de) 2015-10-27 2017-04-27 Endress+Hauser Flowtec Ag MEMS Sensor zu Messung mindestens einer Messgröße
CN113075726B (zh) * 2021-05-10 2022-10-11 联合微电子中心有限责任公司 水听器及其制造方法
CN113790834B (zh) * 2021-09-23 2023-07-25 华东光电集成器件研究所 一种梁膜结构的硅压力传感器芯片制作方法

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Publication number Priority date Publication date Assignee Title
US31459A (en) * 1861-02-19 Stave-machine
US3620084A (en) * 1970-06-03 1971-11-16 Dow Chemical Co Miniature pressure transducer
GB1399988A (en) * 1972-10-02 1975-07-02 Motorola Inc Silicon pressure sensor
US3893228A (en) * 1972-10-02 1975-07-08 Motorola Inc Silicon pressure sensor
US4071838A (en) 1976-02-09 1978-01-31 Diax Corporation Solid state force transducer and method of making same
US4332000A (en) * 1980-10-03 1982-05-25 International Business Machines Corporation Capacitive pressure transducer
US4456901A (en) * 1981-08-31 1984-06-26 Kulite Semiconductor Products, Inc. Dielectrically isolated transducer employing single crystal strain gages
US4510671A (en) * 1981-08-31 1985-04-16 Kulite Semiconductor Products, Inc. Dielectrically isolated transducer employing single crystal strain gages
US4739298A (en) * 1985-02-28 1988-04-19 Kulite Semiconductor Products, Inc. High temperature transducers and methods of manufacturing
JPH07107938B2 (ja) * 1986-12-19 1995-11-15 日本電装株式会社 半導体圧力センサの製造方法
JPS63311774A (ja) * 1987-06-12 1988-12-20 Nippon Denso Co Ltd 半導体圧力センサ及びその製造方法
US4975390A (en) * 1986-12-18 1990-12-04 Nippondenso Co. Ltd. Method of fabricating a semiconductor pressure sensor
JPH0831608B2 (ja) * 1987-03-25 1996-03-27 日本電装株式会社 半導体圧力センサの製造方法
FR2681472B1 (fr) * 1991-09-18 1993-10-29 Commissariat Energie Atomique Procede de fabrication de films minces de materiau semiconducteur.
US5381386A (en) * 1993-05-19 1995-01-10 Hewlett-Packard Company Membrane hydrophone
SE9304145D0 (sv) * 1993-12-10 1993-12-10 Pharmacia Lkb Biotech Sätt att tillverka hålrumsstrukturer
US5632854A (en) * 1995-08-21 1997-05-27 Motorola, Inc. Pressure sensor method of fabrication

Also Published As

Publication number Publication date
EP0798548B1 (de) 2002-06-19
FR2746919B1 (fr) 1998-04-24
DE69713433D1 (de) 2002-07-25
US6001666A (en) 1999-12-14
DE69713433T2 (de) 2003-02-13
JPH1022510A (ja) 1998-01-23
NO971201D0 (no) 1997-03-14
EP0798548A1 (de) 1997-10-01
FR2746919A1 (fr) 1997-10-03

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