NO884603L - Fremgangsmaate til paafoering av metallsilisider for fremstilling av integrerte kretser. - Google Patents

Fremgangsmaate til paafoering av metallsilisider for fremstilling av integrerte kretser.

Info

Publication number
NO884603L
NO884603L NO88884603A NO884603A NO884603L NO 884603 L NO884603 L NO 884603L NO 88884603 A NO88884603 A NO 88884603A NO 884603 A NO884603 A NO 884603A NO 884603 L NO884603 L NO 884603L
Authority
NO
Norway
Prior art keywords
integrated circuits
procedure
preparation
metal silicides
applying metal
Prior art date
Application number
NO88884603A
Other languages
English (en)
Norwegian (no)
Other versions
NO884603D0 (no
Inventor
Ikuo Hirase
Denis Rufin
Michael Shack
Tooru Sumiya
Masamichi Matsuura
Sadayuki Urishima
Original Assignee
Air Liquide
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Air Liquide filed Critical Air Liquide
Publication of NO884603D0 publication Critical patent/NO884603D0/no
Publication of NO884603L publication Critical patent/NO884603L/no

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/42—Silicides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H10D64/0111—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors
    • H10D64/0112—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors using conductive layers comprising silicides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/412—Deposition of metallic or metal-silicide materials
    • H10P14/414—Deposition of metallic or metal-silicide materials of metal-silicide materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Silicon Compounds (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Catalysts (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
NO88884603A 1987-10-19 1988-10-17 Fremgangsmaate til paafoering av metallsilisider for fremstilling av integrerte kretser. NO884603L (no)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8714383A FR2622052B1 (fr) 1987-10-19 1987-10-19 Procede de depot de siliciure de metal refractaire pour la fabrication de circuits integres

Publications (2)

Publication Number Publication Date
NO884603D0 NO884603D0 (no) 1988-10-17
NO884603L true NO884603L (no) 1989-04-20

Family

ID=9355934

Family Applications (1)

Application Number Title Priority Date Filing Date
NO88884603A NO884603L (no) 1987-10-19 1988-10-17 Fremgangsmaate til paafoering av metallsilisider for fremstilling av integrerte kretser.

Country Status (11)

Country Link
US (1) US4981723A (de)
EP (1) EP0313452B1 (de)
JP (1) JPH027423A (de)
KR (1) KR890007388A (de)
AT (1) ATE67629T1 (de)
CA (1) CA1337547C (de)
DE (1) DE3864971D1 (de)
ES (1) ES2024672B3 (de)
FI (1) FI884788A7 (de)
FR (1) FR2622052B1 (de)
NO (1) NO884603L (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR930002673B1 (ko) * 1990-07-05 1993-04-07 삼성전자 주식회사 고융점금속 성장방법
TW396646B (en) 1997-09-11 2000-07-01 Lg Semicon Co Ltd Manufacturing method of semiconductor devices
KR100425147B1 (ko) * 1997-09-29 2004-05-17 주식회사 하이닉스반도체 반도체소자의제조방법

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5860640A (ja) * 1981-10-01 1983-04-11 Hoya Corp 光学ガラス
DE3141567C2 (de) * 1981-10-20 1986-02-06 Siemens AG, 1000 Berlin und 8000 München Verfahren zum Herstellen von aus Tantal, Wolfram oder Molybdän bestehenden Schichten bei niedrigen Temperaturen und Verwendung dieser Schichten
US4557943A (en) * 1983-10-31 1985-12-10 Advanced Semiconductor Materials America, Inc. Metal-silicide deposition using plasma-enhanced chemical vapor deposition
JPS60170234A (ja) * 1984-02-15 1985-09-03 Semiconductor Energy Lab Co Ltd 気相反応装置および気相反応被膜作製方法
US4629635A (en) * 1984-03-16 1986-12-16 Genus, Inc. Process for depositing a low resistivity tungsten silicon composite film on a substrate
JPS61276976A (ja) * 1985-05-31 1986-12-06 Res Dev Corp Of Japan 中間状態種を用いた熱ｃｖｄ法によるシリコン含有高品質薄膜の製造方法及び装置
US4684542A (en) * 1986-08-11 1987-08-04 International Business Machines Corporation Low pressure chemical vapor deposition of tungsten silicide

Also Published As

Publication number Publication date
FI884788A0 (fi) 1988-10-17
US4981723A (en) 1991-01-01
DE3864971D1 (de) 1991-10-24
ATE67629T1 (de) 1991-10-15
ES2024672B3 (es) 1992-03-01
FI884788L (fi) 1989-04-20
KR890007388A (ko) 1989-06-19
FI884788A7 (fi) 1989-04-20
EP0313452A1 (de) 1989-04-26
CA1337547C (fr) 1995-11-14
FR2622052B1 (fr) 1990-02-16
FR2622052A1 (fr) 1989-04-21
EP0313452B1 (de) 1991-09-18
JPH027423A (ja) 1990-01-11
NO884603D0 (no) 1988-10-17

Similar Documents

Publication Publication Date Title
Schmitz Chemical vapor deposition of tungsten and tungsten silicides for VLSI/ULSI applications
MY107107A (en) Method for preparing vaporized reactants for chemical vapor deposition.
GB2141444A (en) Chemical vapor deposition of titanium nitride and like films
KR890011070A (ko) 세라믹 피복물을 지지체위에 형성하는 방법
EP0526468A4 (de)
WO2001098556A3 (en) Temperature controlled gas feedthrough
KR910019113A (ko) 집적 공정 시스템에서 티타늄과 질소함유 가스의 반응에 의해 반도체 웨이퍼상에 질화티타늄을 형성시키는 방법
WO1994000870A3 (en) Chemical vapor deposition from single organometallic precursors
SE8801103L (sv) Kropp med ett oeverdrag av kubisk bornitrid samt saett att framstaella en saadan kropp
EP0328333A3 (de) Verfahren zur Herstellung von supraleitenden Keramiken
NO884603D0 (no) Fremgangsmaate til paafoering av metallsilisider for fremstilling av integrerte kretser.
JPS57158370A (en) Formation of metallic thin film
MY110288A (en) Process for forming deposited film and process for preparing semiconductor device.
US3279946A (en) Hydrogen chloride treatment of semiconductor coating chamber
EP0798769A3 (de) Dielektrische Schichten für Halbleiter
GB942201A (en) Process for producing a silicon film
GB1518564A (en) Method for the low pressure pyrolytic deposition of silicon nitride
JPS553863A (en) Treating method of prime coat by gas softening nitriding
EP0412644A3 (de) Niedertemperatur-Niederdruck-CVD-Herstellungsverfahren mit Gruppe III und/oder Gruppe V dotierter, konformer Silikatglasschicht mit konstanter Dicke auf einer integrierten Struktur
JPH01195277A (ja) 薄膜の形成方法
GB8825948D0 (en) Method for production of thin film perovskite phase lead scandium tantalate
JPS5234668A (en) Gaseous phase growing process of semiconductor
JPS57134940A (en) Forming of semiconductor nitride layer
Alexieva et al. N--H and Si--H Groups in Silicon Nitride Films Studied by Multiple Internal Reflection Spectroscopy
JPS57157530A (en) Forming method for insulator thin-film