FI884788A0 - Foerfarande foer upplagring av silicider pao metalliska eldfasta material foer framstaellning av integrerade kretsar. - Google Patents
Foerfarande foer upplagring av silicider pao metalliska eldfasta material foer framstaellning av integrerade kretsar.Info
- Publication number
- FI884788A0 FI884788A0 FI884788A FI884788A FI884788A0 FI 884788 A0 FI884788 A0 FI 884788A0 FI 884788 A FI884788 A FI 884788A FI 884788 A FI884788 A FI 884788A FI 884788 A0 FI884788 A0 FI 884788A0
- Authority
- FI
- Finland
- Prior art keywords
- foer
- upplagring
- silicider
- metalliska
- kretsar
- Prior art date
Links
- 238000000151 deposition Methods 0.000 abstract 2
- 239000003870 refractory metal Substances 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 238000005234 chemical deposition Methods 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000002243 precursor Substances 0.000 abstract 1
- 229910021332 silicide Inorganic materials 0.000 abstract 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000012686 silicon precursor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/42—Silicides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28518—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising silicides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/32051—Deposition of metallic or metal-silicide layers
- H01L21/32053—Deposition of metallic or metal-silicide layers of metal-silicide layers
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
- Silicon Compounds (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Catalysts (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR8714383A FR2622052B1 (fr) | 1987-10-19 | 1987-10-19 | Procede de depot de siliciure de metal refractaire pour la fabrication de circuits integres |
Publications (2)
Publication Number | Publication Date |
---|---|
FI884788A0 true FI884788A0 (fi) | 1988-10-17 |
FI884788A FI884788A (fi) | 1989-04-20 |
Family
ID=9355934
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FI884788A FI884788A (fi) | 1987-10-19 | 1988-10-17 | Foerfarande foer upplagring av silicider pao metalliska eldfasta material foer framstaellning av integrerade kretsar. |
Country Status (11)
Country | Link |
---|---|
US (1) | US4981723A (fi) |
EP (1) | EP0313452B1 (fi) |
JP (1) | JPH027423A (fi) |
KR (1) | KR890007388A (fi) |
AT (1) | ATE67629T1 (fi) |
CA (1) | CA1337547C (fi) |
DE (1) | DE3864971D1 (fi) |
ES (1) | ES2024672B3 (fi) |
FI (1) | FI884788A (fi) |
FR (1) | FR2622052B1 (fi) |
NO (1) | NO884603L (fi) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR930002673B1 (ko) * | 1990-07-05 | 1993-04-07 | 삼성전자 주식회사 | 고융점금속 성장방법 |
TW396646B (en) | 1997-09-11 | 2000-07-01 | Lg Semicon Co Ltd | Manufacturing method of semiconductor devices |
KR100425147B1 (ko) * | 1997-09-29 | 2004-05-17 | 주식회사 하이닉스반도체 | 반도체소자의제조방법 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5860640A (ja) * | 1981-10-01 | 1983-04-11 | Hoya Corp | 光学ガラス |
DE3141567C2 (de) * | 1981-10-20 | 1986-02-06 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum Herstellen von aus Tantal, Wolfram oder Molybdän bestehenden Schichten bei niedrigen Temperaturen und Verwendung dieser Schichten |
US4557943A (en) * | 1983-10-31 | 1985-12-10 | Advanced Semiconductor Materials America, Inc. | Metal-silicide deposition using plasma-enhanced chemical vapor deposition |
JPS60170234A (ja) * | 1984-02-15 | 1985-09-03 | Semiconductor Energy Lab Co Ltd | 気相反応装置および気相反応被膜作製方法 |
US4629635A (en) * | 1984-03-16 | 1986-12-16 | Genus, Inc. | Process for depositing a low resistivity tungsten silicon composite film on a substrate |
JPS61276976A (ja) * | 1985-05-31 | 1986-12-06 | Res Dev Corp Of Japan | 中間状態種を用いた熱cvd法によるシリコン含有高品質薄膜の製造方法及び装置 |
US4684542A (en) * | 1986-08-11 | 1987-08-04 | International Business Machines Corporation | Low pressure chemical vapor deposition of tungsten silicide |
-
1987
- 1987-10-19 FR FR8714383A patent/FR2622052B1/fr not_active Expired - Fee Related
-
1988
- 1988-10-17 NO NO88884603A patent/NO884603L/no unknown
- 1988-10-17 US US07/258,764 patent/US4981723A/en not_active Expired - Fee Related
- 1988-10-17 FI FI884788A patent/FI884788A/fi not_active IP Right Cessation
- 1988-10-18 AT AT88402620T patent/ATE67629T1/de not_active IP Right Cessation
- 1988-10-18 DE DE8888402620T patent/DE3864971D1/de not_active Expired - Lifetime
- 1988-10-18 JP JP63260693A patent/JPH027423A/ja active Pending
- 1988-10-18 KR KR1019880013562A patent/KR890007388A/ko not_active Application Discontinuation
- 1988-10-18 ES ES88402620T patent/ES2024672B3/es not_active Expired - Lifetime
- 1988-10-18 EP EP88402620A patent/EP0313452B1/fr not_active Expired - Lifetime
- 1988-10-18 CA CA000580443A patent/CA1337547C/fr not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
CA1337547C (fr) | 1995-11-14 |
NO884603D0 (no) | 1988-10-17 |
JPH027423A (ja) | 1990-01-11 |
US4981723A (en) | 1991-01-01 |
ATE67629T1 (de) | 1991-10-15 |
EP0313452B1 (fr) | 1991-09-18 |
DE3864971D1 (de) | 1991-10-24 |
FR2622052A1 (fr) | 1989-04-21 |
EP0313452A1 (fr) | 1989-04-26 |
KR890007388A (ko) | 1989-06-19 |
NO884603L (no) | 1989-04-20 |
FR2622052B1 (fr) | 1990-02-16 |
FI884788A (fi) | 1989-04-20 |
ES2024672B3 (es) | 1992-03-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM | Patent lapsed |
Owner name: L´AIR LIQUIDE, SOCIETE ANONYME POUR |