NO20090454L - Silikonsolceller innbefattende lantanider for a modifisere spektret og fremgangsmate for fremstilling av denne - Google Patents

Silikonsolceller innbefattende lantanider for a modifisere spektret og fremgangsmate for fremstilling av denne

Info

Publication number
NO20090454L
NO20090454L NO20090454A NO20090454A NO20090454L NO 20090454 L NO20090454 L NO 20090454L NO 20090454 A NO20090454 A NO 20090454A NO 20090454 A NO20090454 A NO 20090454A NO 20090454 L NO20090454 L NO 20090454L
Authority
NO
Norway
Prior art keywords
solar cells
energy
modify
spectrum
preparing
Prior art date
Application number
NO20090454A
Other languages
English (en)
Inventor
Dirk Habermann
Original Assignee
Schmid Technology Systems Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Schmid Technology Systems Gmbh filed Critical Schmid Technology Systems Gmbh
Publication of NO20090454L publication Critical patent/NO20090454L/no

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/055—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means where light is absorbed and re-emitted at a different wavelength by the optical element directly associated or integrated with the PV cell, e.g. by using luminescent material, fluorescent concentrators or up-conversion arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
    • H01L31/0288—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table characterised by the doping material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Sustainable Development (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Energy (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Silicon Compounds (AREA)

Abstract

Formålet med foreliggende oppfinnelse er å forbedre energieffektiviteten til solceller. I henhold til foreliggende oppfinnelse vil silikonmaterialet bli dopet med en eller flere forskjellige lantanitter slik at materialet penetrerer inn i et lag tilnærmet 60 nm dypt. Fotoner, hvis energi er mindre enn det dobbelte av 1.2 eV-silikonmaterial-båndgap, blir så omdannet til i det minste to fotoner som har energi i området for sillkonbåndgapet, ved eksitasjon og rekombinasjon av de uparede 4f-elektronene i lantanitt. Som et resultat vil tilleggsfotoner som har fordelaktig energi nær til sillkonbåndgapet bli gitt for elektron-hullpardanning.
NO20090454A 2006-06-29 2009-01-29 Silikonsolceller innbefattende lantanider for a modifisere spektret og fremgangsmate for fremstilling av denne NO20090454L (no)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102006031300A DE102006031300A1 (de) 2006-06-29 2006-06-29 Verfahren zur Dotierung von Siliziummaterial für Solarzellen, entsprechend dotiertes Siliziummaterial und Solarzelle
PCT/EP2007/004807 WO2008000332A1 (de) 2006-06-29 2007-05-31 Silizium-solarzellen mit lanthaniden zur veränderung des spektrums und verfahren zu deren herstellung

Publications (1)

Publication Number Publication Date
NO20090454L true NO20090454L (no) 2009-03-11

Family

ID=38371030

Family Applications (1)

Application Number Title Priority Date Filing Date
NO20090454A NO20090454L (no) 2006-06-29 2009-01-29 Silikonsolceller innbefattende lantanider for a modifisere spektret og fremgangsmate for fremstilling av denne

Country Status (11)

Country Link
US (1) US20090199902A1 (no)
EP (1) EP2038935A1 (no)
JP (1) JP2009542018A (no)
KR (1) KR20090042905A (no)
CN (1) CN101501863A (no)
AU (1) AU2007264127A1 (no)
DE (1) DE102006031300A1 (no)
NO (1) NO20090454L (no)
SG (1) SG186507A1 (no)
TW (1) TW200805693A (no)
WO (1) WO2008000332A1 (no)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ES2311431B2 (es) * 2008-06-06 2009-07-21 Universidad Politecnica De Madrid Procedimiento de fabricacion de dispositivos optoelectronicos de banda intermedia basados en tecnologia de lamina delgada.
CN102828242B (zh) * 2012-09-06 2015-05-27 西安隆基硅材料股份有限公司 含有下转换发光量子点的晶体硅及其制备方法
WO2016055669A1 (es) * 2014-10-08 2016-04-14 Universidad De La Laguna Colector fotovoltaico
CN105552170A (zh) * 2016-01-29 2016-05-04 佛山市聚成生化技术研发有限公司 一种太阳能电池的制备方法及由该方法制备的太阳能电池
CN105839182A (zh) * 2016-04-11 2016-08-10 西安隆基硅材料股份有限公司 晶体硅及其制备方法
CN105762206A (zh) * 2016-04-11 2016-07-13 西安隆基硅材料股份有限公司 晶体硅及其制备方法
CN106169512A (zh) * 2016-08-24 2016-11-30 晶科能源有限公司 一种稀土掺杂的晶体硅、其制备方法及太阳能电池
KR102040516B1 (ko) * 2018-02-01 2019-12-05 성균관대학교산학협력단 단일 밴드 상향 변환 발광체 및 이의 제조 방법
CN110577209A (zh) * 2019-09-19 2019-12-17 天津大学 原位合成碳纳米管表面负载氧化铜纳米颗粒的制备方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3949463A (en) * 1973-02-13 1976-04-13 Communications Satellite Corporation (Comsat) Method of applying an anti-reflective coating to a solar cell
US5249195A (en) * 1992-06-30 1993-09-28 At&T Bell Laboratories Erbium doped optical devices
US5322813A (en) * 1992-08-31 1994-06-21 International Business Machines Corporation Method of making supersaturated rare earth doped semiconductor layers by chemical vapor deposition
JP3698215B2 (ja) * 1995-01-23 2005-09-21 勝泰 河野 受光素子
DE19522539C2 (de) * 1995-06-21 1997-06-12 Fraunhofer Ges Forschung Solarzelle mit einem, eine Oberflächentextur aufweisenden Emitter sowie Verfahren zur Herstellung derselben
JPH10125940A (ja) * 1996-10-16 1998-05-15 Toshiba Corp 光電変換素子
JPH10270807A (ja) * 1997-03-27 1998-10-09 Shinichiro Uekusa 発光素子用半導体及びその製造方法
JP2001077388A (ja) * 1999-09-07 2001-03-23 Sumitomo Osaka Cement Co Ltd 太陽電池およびその製造方法
JP2001320067A (ja) * 2000-03-02 2001-11-16 Nippon Sheet Glass Co Ltd 光電変換装置
US6734453B2 (en) * 2000-08-08 2004-05-11 Translucent Photonics, Inc. Devices with optical gain in silicon
JP4291973B2 (ja) * 2001-02-08 2009-07-08 大阪瓦斯株式会社 光電変換材料および光電池
JP2003243682A (ja) * 2002-02-19 2003-08-29 Sumitomo Bakelite Co Ltd 太陽電池
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CA2522405A1 (en) * 2003-04-16 2004-11-04 Apollon Solar Photovoltaic module and production method thereof
JP2005026534A (ja) * 2003-07-04 2005-01-27 Sharp Corp 半導体デバイスおよびその製造方法

Also Published As

Publication number Publication date
KR20090042905A (ko) 2009-05-04
SG186507A1 (en) 2013-01-30
DE102006031300A1 (de) 2008-01-03
JP2009542018A (ja) 2009-11-26
EP2038935A1 (de) 2009-03-25
US20090199902A1 (en) 2009-08-13
CN101501863A (zh) 2009-08-05
TW200805693A (en) 2008-01-16
WO2008000332A1 (de) 2008-01-03
AU2007264127A1 (en) 2008-01-03

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