NO131008B - - Google Patents
Download PDFInfo
- Publication number
- NO131008B NO131008B NO401770A NO401770A NO131008B NO 131008 B NO131008 B NO 131008B NO 401770 A NO401770 A NO 401770A NO 401770 A NO401770 A NO 401770A NO 131008 B NO131008 B NO 131008B
- Authority
- NO
- Norway
- Prior art keywords
- semiconductor device
- boron oxide
- transistors
- temperature
- boron
- Prior art date
Links
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical group O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 claims description 76
- 229910052810 boron oxide Inorganic materials 0.000 claims description 69
- 239000004065 semiconductor Substances 0.000 claims description 61
- 239000000463 material Substances 0.000 claims description 44
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 32
- 238000011282 treatment Methods 0.000 claims description 30
- 239000000203 mixture Substances 0.000 claims description 21
- 229920001296 polysiloxane Polymers 0.000 claims description 20
- 230000000087 stabilizing effect Effects 0.000 claims description 20
- 239000000945 filler Substances 0.000 claims description 18
- 229910052732 germanium Inorganic materials 0.000 claims description 18
- 150000001875 compounds Chemical class 0.000 claims description 17
- 239000011521 glass Substances 0.000 claims description 16
- 150000002894 organic compounds Chemical class 0.000 claims description 15
- 229920000620 organic polymer Polymers 0.000 claims description 13
- 238000011049 filling Methods 0.000 claims description 10
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 239000013078 crystal Substances 0.000 claims description 4
- 229920005573 silicon-containing polymer Polymers 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 3
- 125000005619 boric acid group Chemical group 0.000 claims description 2
- 229920001558 organosilicon polymer Polymers 0.000 claims description 2
- LBZRRXXISSKCHV-UHFFFAOYSA-N [B].[O] Chemical compound [B].[O] LBZRRXXISSKCHV-UHFFFAOYSA-N 0.000 claims 3
- 239000004519 grease Substances 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 description 41
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 15
- 229910052796 boron Inorganic materials 0.000 description 15
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 12
- 239000001301 oxygen Substances 0.000 description 12
- 229910052760 oxygen Inorganic materials 0.000 description 12
- 230000006641 stabilisation Effects 0.000 description 11
- 238000011105 stabilization Methods 0.000 description 11
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 10
- 239000004327 boric acid Substances 0.000 description 9
- 229920002545 silicone oil Polymers 0.000 description 9
- 229910011255 B2O3 Inorganic materials 0.000 description 7
- 238000005530 etching Methods 0.000 description 7
- 230000003321 amplification Effects 0.000 description 6
- 238000003199 nucleic acid amplification method Methods 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 238000003860 storage Methods 0.000 description 6
- 239000004020 conductor Substances 0.000 description 5
- 230000006872 improvement Effects 0.000 description 5
- 229910052799 carbon Inorganic materials 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- 229910001245 Sb alloy Inorganic materials 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 238000005275 alloying Methods 0.000 description 3
- 239000002140 antimony alloy Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000012766 organic filler Substances 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 239000004576 sand Substances 0.000 description 3
- QFLWZFQWSBQYPS-AWRAUJHKSA-N (3S)-3-[[(2S)-2-[[(2S)-2-[5-[(3aS,6aR)-2-oxo-1,3,3a,4,6,6a-hexahydrothieno[3,4-d]imidazol-4-yl]pentanoylamino]-3-methylbutanoyl]amino]-3-(4-hydroxyphenyl)propanoyl]amino]-4-[1-bis(4-chlorophenoxy)phosphorylbutylamino]-4-oxobutanoic acid Chemical compound CCCC(NC(=O)[C@H](CC(O)=O)NC(=O)[C@H](Cc1ccc(O)cc1)NC(=O)[C@@H](NC(=O)CCCCC1SC[C@@H]2NC(=O)N[C@H]12)C(C)C)P(=O)(Oc1ccc(Cl)cc1)Oc1ccc(Cl)cc1 QFLWZFQWSBQYPS-AWRAUJHKSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 description 2
- 238000007598 dipping method Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 239000011872 intimate mixture Substances 0.000 description 2
- VGTPKLINSHNZRD-UHFFFAOYSA-N oxoborinic acid Chemical compound OB=O VGTPKLINSHNZRD-UHFFFAOYSA-N 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- BTBUEUYNUDRHOZ-UHFFFAOYSA-N Borate Chemical compound [O-]B([O-])[O-] BTBUEUYNUDRHOZ-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 230000005355 Hall effect Effects 0.000 description 1
- 101100400378 Mus musculus Marveld2 gene Proteins 0.000 description 1
- 239000012494 Quartz wool Substances 0.000 description 1
- KAPYVWKEUSXLKC-UHFFFAOYSA-N [Sb].[Au] Chemical compound [Sb].[Au] KAPYVWKEUSXLKC-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- GVFOJDIFWSDNOY-UHFFFAOYSA-N antimony tin Chemical compound [Sn].[Sb] GVFOJDIFWSDNOY-UHFFFAOYSA-N 0.000 description 1
- 239000010425 asbestos Substances 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004320 controlled atmosphere Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 235000019441 ethanol Nutrition 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- CXQXSVUQTKDNFP-UHFFFAOYSA-N octamethyltrisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)O[Si](C)(C)C CXQXSVUQTKDNFP-UHFFFAOYSA-N 0.000 description 1
- 150000003961 organosilicon compounds Chemical class 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 229910052895 riebeckite Inorganic materials 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 230000000699 topical effect Effects 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- LGQXXHMEBUOXRP-UHFFFAOYSA-N tributyl borate Chemical compound CCCCOB(OCCCC)OCCCC LGQXXHMEBUOXRP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F24—HEATING; RANGES; VENTILATING
- F24C—DOMESTIC STOVES OR RANGES ; DETAILS OF DOMESTIC STOVES OR RANGES, OF GENERAL APPLICATION
- F24C15/00—Details
- F24C15/001—Details arrangements for discharging combustion gases
- F24C15/002—Details arrangements for discharging combustion gases for stoves of the closed type
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Combustion & Propulsion (AREA)
- Mechanical Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Ventilation (AREA)
- Formation Of Insulating Films (AREA)
- Housings, Intake/Discharge, And Installation Of Fluid Heaters (AREA)
- Incineration Of Waste (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19691953889 DE1953889C3 (de) | 1969-10-25 | 1969-10-25 | Windschutzhaube für einen Außenwandofen |
Publications (2)
Publication Number | Publication Date |
---|---|
NO131008B true NO131008B (fr) | 1974-12-09 |
NO131008C NO131008C (fr) | 1975-03-19 |
Family
ID=5749272
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NO401770A NO131008C (fr) | 1969-10-25 | 1970-10-23 |
Country Status (6)
Country | Link |
---|---|
BE (1) | BE757931A (fr) |
CH (1) | CH524103A (fr) |
DE (1) | DE1953889C3 (fr) |
FR (1) | FR2066449A5 (fr) |
GB (1) | GB1298850A (fr) |
NO (1) | NO131008C (fr) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3025441C2 (de) * | 1980-07-04 | 1983-05-11 | Philipp Kreis GmbH & Co Truma-Gerätebau, 8000 München | Außenwandkasten für den Verbrennungsluft- und Abgaskanal eines mit einem Brennersystem arbeitenden Gerätes |
GB2359352A (en) * | 2000-02-21 | 2001-08-22 | Docherty Ltd H | A balanced flue terminal |
CN102661611B (zh) * | 2012-04-14 | 2015-07-22 | 大连惠英机械有限公司 | 一种渐缩式进风风室 |
CN108442650B (zh) * | 2018-05-21 | 2024-01-16 | 平湖市凯宇鲜菜有限公司 | 导风片及具有该导风片的烟道 |
-
0
- BE BE757931D patent/BE757931A/fr unknown
-
1969
- 1969-10-25 DE DE19691953889 patent/DE1953889C3/de not_active Expired
-
1970
- 1970-10-23 FR FR7038341A patent/FR2066449A5/fr not_active Expired
- 1970-10-23 NO NO401770A patent/NO131008C/no unknown
- 1970-10-26 GB GB5076170A patent/GB1298850A/en not_active Expired
- 1970-10-26 CH CH1576870A patent/CH524103A/de not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
FR2066449A5 (fr) | 1971-08-06 |
DE1953889C3 (de) | 1980-11-20 |
BE757931A (fr) | 1971-04-01 |
DE1953889B2 (de) | 1975-03-13 |
GB1298850A (en) | 1972-12-06 |
CH524103A (de) | 1972-06-15 |
DE1953889A1 (de) | 1971-05-06 |
NO131008C (fr) | 1975-03-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS586300B2 (ja) | アニ−リング方法 | |
CA2287834A1 (fr) | Procede et appareil pour la fabrication d'electrodes negatives et positives autodopantes destinees a des photopiles au silicium et a d'autres dispositifs | |
US2998556A (en) | Semi-conductor device | |
US2957112A (en) | Treatment of tantalum semiconductor electrodes | |
US2974075A (en) | Treatment of semiconductive devices | |
NO131008B (fr) | ||
US3160520A (en) | Method for coating p-nu junction devices with an electropositive exhibiting materialand article | |
GB848619A (en) | Improvements in or relating to the fabrication of semiconductor rectifiers | |
Dou et al. | Vacancy healing for stable perovskite solar cells via bifunctional potassium tartrate | |
GB1014287A (en) | The production of an oxide coating on a substantially monocrystalline semi-conductorbody | |
US2989424A (en) | Method of providing an oxide protective coating for semiconductors | |
US3487275A (en) | Protective element for hermetically enclosed semiconductor devices | |
US2998557A (en) | Semi-conductor barrier layer systems | |
US2998554A (en) | Semi-conductor barrier layer system | |
GB818464A (en) | Improvements in or relating to semiconductor devices | |
US2887630A (en) | Transistor | |
US3585071A (en) | Method of manufacturing a semiconductor device including a semiconductor material of the aiibvi type,and semiconductor device manufactured by this method | |
US3036006A (en) | Method of doping a silicon monocrystal | |
US2882195A (en) | Semiconducting materials and devices made therefrom | |
Chantre et al. | On the hydrogen content of commercial silicon wafers | |
US2882469A (en) | Semiconducting materials and devices made therefrom | |
US2882471A (en) | Semiconducting material and devices made therefrom | |
GB902153A (en) | Improvements in or relating to semi-conductive devices | |
US2916407A (en) | Surface treatment of silicon | |
US2882192A (en) | Semiconducting materials and devices made therefrom |