NO116680B - - Google Patents

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Publication number
NO116680B
NO116680B NO164019A NO16401966A NO116680B NO 116680 B NO116680 B NO 116680B NO 164019 A NO164019 A NO 164019A NO 16401966 A NO16401966 A NO 16401966A NO 116680 B NO116680 B NO 116680B
Authority
NO
Norway
Prior art keywords
layer
rectifier element
inner layer
stated
doping concentration
Prior art date
Application number
NO164019A
Other languages
English (en)
Norwegian (no)
Inventor
A Herlet
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of NO116680B publication Critical patent/NO116680B/no

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1012Base regions of thyristors
    • H01L29/1016Anode base regions of thyristors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/74Thyristor-type devices, e.g. having four-zone regenerative action

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
NO164019A 1965-07-30 1966-07-21 NO116680B (da)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE1965S0098547 DE1514520B1 (de) 1965-07-30 1965-07-30 Steuerbares Halbleiterbauelement

Publications (1)

Publication Number Publication Date
NO116680B true NO116680B (da) 1969-05-05

Family

ID=7521553

Family Applications (1)

Application Number Title Priority Date Filing Date
NO164019A NO116680B (da) 1965-07-30 1966-07-21

Country Status (10)

Country Link
US (1) US3513363A (da)
AT (1) AT258417B (da)
BE (1) BE684737A (da)
CH (1) CH442533A (da)
DE (1) DE1514520B1 (da)
DK (1) DK119620B (da)
FR (1) FR1487814A (da)
GB (1) GB1107068A (da)
NL (1) NL6610582A (da)
NO (1) NO116680B (da)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3874956A (en) * 1972-05-15 1975-04-01 Mitsubishi Electric Corp Method for making a semiconductor switching device
CH580339A5 (da) * 1974-12-23 1976-09-30 Bbc Brown Boveri & Cie
US4112458A (en) * 1976-01-26 1978-09-05 Cutler-Hammer, Inc. Silicon thyristor sensitive to low temperature with thermal switching characteristics at temperatures less than 50° C
JPS5912026B2 (ja) * 1977-10-14 1984-03-19 株式会社日立製作所 サイリスタ
DE3573357D1 (en) * 1984-12-27 1989-11-02 Siemens Ag Semiconductor power switch

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2980832A (en) * 1959-06-10 1961-04-18 Westinghouse Electric Corp High current npnp switch
US3209428A (en) * 1961-07-20 1965-10-05 Westinghouse Electric Corp Process for treating semiconductor devices

Also Published As

Publication number Publication date
DK119620B (da) 1971-02-01
CH442533A (de) 1967-08-31
AT258417B (de) 1967-11-27
FR1487814A (fr) 1967-07-07
GB1107068A (en) 1968-03-20
DE1514520B1 (de) 1971-04-01
BE684737A (da) 1967-01-30
US3513363A (en) 1970-05-19
NL6610582A (da) 1967-01-31

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