NO116680B - - Google Patents
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- Publication number
- NO116680B NO116680B NO164019A NO16401966A NO116680B NO 116680 B NO116680 B NO 116680B NO 164019 A NO164019 A NO 164019A NO 16401966 A NO16401966 A NO 16401966A NO 116680 B NO116680 B NO 116680B
- Authority
- NO
- Norway
- Prior art keywords
- layer
- rectifier element
- inner layer
- stated
- doping concentration
- Prior art date
Links
- 238000009792 diffusion process Methods 0.000 claims description 22
- 239000002800 charge carrier Substances 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 12
- 238000005275 alloying Methods 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 230000008569 process Effects 0.000 claims description 5
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 claims description 4
- 239000007924 injection Substances 0.000 claims description 3
- 238000002347 injection Methods 0.000 claims description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 3
- 239000003708 ampul Substances 0.000 claims description 2
- 239000010453 quartz Substances 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 73
- 230000000903 blocking effect Effects 0.000 description 15
- 230000015556 catabolic process Effects 0.000 description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 239000000370 acceptor Substances 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 238000000407 epitaxy Methods 0.000 description 4
- 230000007704 transition Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000005496 eutectics Effects 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 238000001953 recrystallisation Methods 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910000789 Aluminium-silicon alloy Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- -1 SiHCl^or SiCl^ Chemical class 0.000 description 1
- OFLYIWITHZJFLS-UHFFFAOYSA-N [Si].[Au] Chemical compound [Si].[Au] OFLYIWITHZJFLS-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000012792 core layer Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000007142 ring opening reaction Methods 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1012—Base regions of thyristors
- H01L29/1016—Anode base regions of thyristors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE1965S0098547 DE1514520B1 (de) | 1965-07-30 | 1965-07-30 | Steuerbares Halbleiterbauelement |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NO116680B true NO116680B (da) | 1969-05-05 |
Family
ID=7521553
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NO164019A NO116680B (da) | 1965-07-30 | 1966-07-21 |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US3513363A (da) |
| AT (1) | AT258417B (da) |
| BE (1) | BE684737A (da) |
| CH (1) | CH442533A (da) |
| DE (1) | DE1514520B1 (da) |
| DK (1) | DK119620B (da) |
| FR (1) | FR1487814A (da) |
| GB (1) | GB1107068A (da) |
| NL (1) | NL6610582A (da) |
| NO (1) | NO116680B (da) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3874956A (en) * | 1972-05-15 | 1975-04-01 | Mitsubishi Electric Corp | Method for making a semiconductor switching device |
| CH580339A5 (da) * | 1974-12-23 | 1976-09-30 | Bbc Brown Boveri & Cie | |
| US4112458A (en) * | 1976-01-26 | 1978-09-05 | Cutler-Hammer, Inc. | Silicon thyristor sensitive to low temperature with thermal switching characteristics at temperatures less than 50° C |
| JPS5912026B2 (ja) * | 1977-10-14 | 1984-03-19 | 株式会社日立製作所 | サイリスタ |
| DE3573357D1 (en) * | 1984-12-27 | 1989-11-02 | Siemens Ag | Semiconductor power switch |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2980832A (en) * | 1959-06-10 | 1961-04-18 | Westinghouse Electric Corp | High current npnp switch |
| US3209428A (en) * | 1961-07-20 | 1965-10-05 | Westinghouse Electric Corp | Process for treating semiconductor devices |
-
1965
- 1965-07-30 DE DE1965S0098547 patent/DE1514520B1/de active Pending
-
1966
- 1966-03-30 AT AT300066A patent/AT258417B/de active
- 1966-04-12 DK DK185466AA patent/DK119620B/da unknown
- 1966-05-17 CH CH719366A patent/CH442533A/de unknown
- 1966-07-21 NO NO164019A patent/NO116680B/no unknown
- 1966-07-26 FR FR70958A patent/FR1487814A/fr not_active Expired
- 1966-07-27 NL NL6610582A patent/NL6610582A/xx unknown
- 1966-07-28 US US568640A patent/US3513363A/en not_active Expired - Lifetime
- 1966-07-28 BE BE684737D patent/BE684737A/xx unknown
- 1966-08-01 GB GB34498/66A patent/GB1107068A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DK119620B (da) | 1971-02-01 |
| NL6610582A (da) | 1967-01-31 |
| DE1514520B1 (de) | 1971-04-01 |
| US3513363A (en) | 1970-05-19 |
| FR1487814A (fr) | 1967-07-07 |
| AT258417B (de) | 1967-11-27 |
| BE684737A (da) | 1967-01-30 |
| GB1107068A (en) | 1968-03-20 |
| CH442533A (de) | 1967-08-31 |
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