CH580339A5 - - Google Patents

Info

Publication number
CH580339A5
CH580339A5 CH1724074A CH1724074A CH580339A5 CH 580339 A5 CH580339 A5 CH 580339A5 CH 1724074 A CH1724074 A CH 1724074A CH 1724074 A CH1724074 A CH 1724074A CH 580339 A5 CH580339 A5 CH 580339A5
Authority
CH
Switzerland
Application number
CH1724074A
Original Assignee
Bbc Brown Boveri & Cie
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bbc Brown Boveri & Cie filed Critical Bbc Brown Boveri & Cie
Priority to CH1724074A priority Critical patent/CH580339A5/xx
Priority to DE2507104A priority patent/DE2507104C2/de
Priority to JP50149411A priority patent/JPS6012789B2/ja
Priority to US05/642,551 priority patent/US4081821A/en
Publication of CH580339A5 publication Critical patent/CH580339A5/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7432—Asymmetrical thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
CH1724074A 1974-12-23 1974-12-23 CH580339A5 (da)

Priority Applications (4)

Application Number Priority Date Filing Date Title
CH1724074A CH580339A5 (da) 1974-12-23 1974-12-23
DE2507104A DE2507104C2 (de) 1974-12-23 1975-02-19 Thyristor für hohe Frequenzen
JP50149411A JPS6012789B2 (ja) 1974-12-23 1975-12-15 ２つの安定状態を有する高周波用の半導体素子
US05/642,551 US4081821A (en) 1974-12-23 1975-12-19 Bistable semiconductor component for high frequencies having four zones of alternating opposed types of conductivity

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH1724074A CH580339A5 (da) 1974-12-23 1974-12-23

Publications (1)

Publication Number Publication Date
CH580339A5 true CH580339A5 (da) 1976-09-30

Family

ID=4423856

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1724074A CH580339A5 (da) 1974-12-23 1974-12-23

Country Status (4)

Country Link
US (1) US4081821A (da)
JP (1) JPS6012789B2 (da)
CH (1) CH580339A5 (da)
DE (1) DE2507104C2 (da)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5942989B2 (ja) * 1977-01-24 1984-10-18 株式会社日立製作所 高耐圧半導体素子およびその製造方法
US4278476A (en) * 1979-12-05 1981-07-14 Westinghouse Electric Corp. Method of making ion implanted reverse-conducting thyristor
JPS57201076A (en) * 1981-06-03 1982-12-09 Fuji Electric Corp Res & Dev Ltd Photo-arc thyristor
JPS5896764A (ja) * 1981-12-03 1983-06-08 Toshiba Corp ゲ−トタ−ンオフサイリスタ
EP0283788A1 (de) * 1987-03-09 1988-09-28 Siemens Aktiengesellschaft Abschaltbares Leistungshalbleiterbauelement

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL272752A (da) * 1960-12-20
GB1052447A (da) * 1962-09-15
US3277352A (en) * 1963-03-14 1966-10-04 Itt Four layer semiconductor device
DE1514520B1 (de) * 1965-07-30 1971-04-01 Siemens Ag Steuerbares Halbleiterbauelement
DE1514655A1 (de) * 1965-12-30 1969-08-28 Siemens Ag Lawinendiode zur Schwingungserzeugung unter quasistationaeren Bedingungen unterhalb der Grenzfrequenz fuer den Laufzeitfall
DE1589453A1 (de) * 1966-06-28 1970-04-02 Asea Ab Halbleiteranordnung
US3900771A (en) * 1970-11-25 1975-08-19 Gerhard Krause Transistor with high current density
US3914781A (en) * 1971-04-13 1975-10-21 Sony Corp Gate controlled rectifier
US3943549A (en) * 1972-03-15 1976-03-09 Bbc Brown, Boveri & Company, Limited Thyristor

Also Published As

Publication number Publication date
DE2507104A1 (de) 1976-07-01
US4081821A (en) 1978-03-28
JPS5186983A (en) 1976-07-30
DE2507104C2 (de) 1984-08-09
JPS6012789B2 (ja) 1985-04-03

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Legal Events

Date Code Title Description
PL Patent ceased