NL91691C - - Google Patents

Info

Publication number
NL91691C
NL91691C NL91691DA NL91691C NL 91691 C NL91691 C NL 91691C NL 91691D A NL91691D A NL 91691DA NL 91691 C NL91691 C NL 91691C
Authority
NL
Netherlands
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of NL91691C publication Critical patent/NL91691C/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/834Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00Electrodes of devices having potential barriers
    • H10D64/60Electrodes characterised by their materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00Diodes
    • H10D8/20Breakdown diodes, e.g. avalanche diodes
    • H10D8/25Zener diodes 
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Resistance Heating (AREA)
NL91691D 1952-02-07 NL91691C (en:Method)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US270370A US2757324A (en) 1952-02-07 1952-02-07 Fabrication of silicon translating devices

Publications (1)

Publication Number Publication Date
NL91691C true NL91691C (en:Method)

Family

ID=23031071

Family Applications (2)

Application Number Title Priority Date Filing Date
NL91691D NL91691C (en:Method) 1952-02-07
NLAANVRAGE7714207,A NL175652B (nl) 1952-02-07 Glijschoen voor een spaninrichting van een greppelbouwinrichting.

Family Applications After (1)

Application Number Title Priority Date Filing Date
NLAANVRAGE7714207,A NL175652B (nl) 1952-02-07 Glijschoen voor een spaninrichting van een greppelbouwinrichting.

Country Status (7)

Country Link
US (1) US2757324A (en:Method)
AT (1) AT177475B (en:Method)
BE (1) BE517459A (en:Method)
DE (1) DE1027325B (en:Method)
FR (1) FR1070095A (en:Method)
GB (1) GB724930A (en:Method)
NL (2) NL175652B (en:Method)

Families Citing this family (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE532794A (en:Method) * 1953-10-26
BE544843A (en:Method) * 1955-02-25
NL110588C (en:Method) * 1955-03-10
US3065534A (en) * 1955-03-30 1962-11-27 Itt Method of joining a semiconductor to a conductor
DE1040697B (de) * 1955-03-30 1958-10-09 Siemens Ag Verfahren zur Dotierung von Halbleiterkoerpern
US2906932A (en) * 1955-06-13 1959-09-29 Sprague Electric Co Silicon junction diode
GB794128A (en) * 1955-08-04 1958-04-30 Gen Electric Co Ltd Improvements in or relating to methods of forming a junction in a semiconductor
US2919386A (en) * 1955-11-10 1959-12-29 Hoffman Electronics Corp Rectifier and method of making same
NL222571A (en:Method) * 1956-03-05 1900-01-01
NL107648C (en:Method) * 1956-05-15
DE1218066B (de) * 1956-09-25 1966-06-02 Siemens Ag Herstellung von Zonen unterschiedlichen Leitungstypus in Halbleiterkoerpern unter Anwendung des Legierungsverfahrens
US2878432A (en) * 1956-10-12 1959-03-17 Rca Corp Silicon junction devices
NL113327C (en:Method) * 1956-10-31 1900-01-01
US2985550A (en) * 1957-01-04 1961-05-23 Texas Instruments Inc Production of high temperature alloyed semiconductors
US2893901A (en) * 1957-01-28 1959-07-07 Sprague Electric Co Semiconductor junction
NL224227A (en:Method) * 1957-01-29
DE1282203B (de) * 1957-06-24 1968-11-07 Siemens Ag Verfahren zum Herstellen einer insbesondere auf Strahlung ansprechenden Halbleiterkristall-anordnung mit pn-UEbergang und den pn-UEbergang gegen Feuchtigkeit schuetzender Huelle und danach hergestellte Halbleiteranordnung
BE569023A (en:Method) * 1957-07-01
NL230537A (en:Method) * 1957-08-15 1900-01-01
DE1165755B (de) * 1957-09-26 1964-03-19 Philco Corp Eine Ges Nach Den Verfahren zur Befestigung von Zuleitungen an den Kontaktelektroden von Halbleiterkoerpern und Vorrichtung zur Durchfuehrung des Verfahrens
DE1067936B (en:Method) * 1958-02-04 1959-10-29
US2953673A (en) * 1958-04-18 1960-09-20 Bell Telephone Labor Inc Method of joining wires
US2989671A (en) * 1958-05-23 1961-06-20 Pacific Semiconductors Inc Voltage sensitive semiconductor capacitor
NL113840C (en:Method) * 1958-06-14
NL300609A (en:Method) * 1958-06-14 1967-06-26
US3012921A (en) * 1958-08-20 1961-12-12 Philco Corp Controlled jet etching of semiconductor units
NL121500C (en:Method) * 1958-09-02
US3073006A (en) * 1958-09-16 1963-01-15 Westinghouse Electric Corp Method and apparatus for the fabrication of alloyed transistors
US3091849A (en) * 1959-09-14 1963-06-04 Pacific Semiconductors Inc Method of bonding materials
US3127646A (en) * 1959-10-06 1964-04-07 Clevite Corp Alloying fixtures
NL261654A (en:Method) * 1960-02-24
NL261280A (en:Method) * 1960-02-25 1900-01-01
US3025439A (en) * 1960-09-22 1962-03-13 Texas Instruments Inc Mounting for silicon semiconductor device
NL280850A (en:Method) * 1961-07-12 1900-01-01
BE627126A (en:Method) * 1962-01-15 1900-01-01
NL288472A (en:Method) * 1962-02-02
US3235945A (en) * 1962-10-09 1966-02-22 Philco Corp Connection of semiconductor elements to thin film circuits using foil ribbon
US3434828A (en) * 1963-02-01 1969-03-25 Texas Instruments Inc Gold alloy for attaching a lead to a semiconductor body
US3223820A (en) * 1963-03-25 1965-12-14 Matsuura Etsuyuki Method of ohmically connecting filament to semiconducting material
US3617682A (en) * 1969-06-23 1971-11-02 Gen Electric Semiconductor chip bonder
US4485290A (en) * 1982-11-01 1984-11-27 At&T Technologies, Inc. Bonding a workpiece to a body
US4558200A (en) * 1983-08-12 1985-12-10 Eaton Corporation Electrical lead termination
WO2018078642A1 (en) 2016-10-24 2018-05-03 Indian Institute Of Technology, Guwahati A microfluidic electrical energy harvester

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB625195A (en:Method) *
US2329483A (en) * 1938-05-27 1943-09-14 Int Nickel Co Bearing
US2226944A (en) * 1938-10-27 1940-12-31 Bell Telephone Labor Inc Method of bonding dissimilar metals
US2402662A (en) * 1941-05-27 1946-06-25 Bell Telephone Labor Inc Light-sensitive electric device
US2398449A (en) * 1941-07-09 1946-04-16 Bell Telephone Labor Inc Method of making hermetic seals
US2406310A (en) * 1944-02-11 1946-08-27 Machlett Lab Inc Beryllium brazing
US2646536A (en) * 1946-11-14 1953-07-21 Purdue Research Foundation Rectifier
US2567970A (en) * 1947-12-24 1951-09-18 Bell Telephone Labor Inc Semiconductor comprising silicon and method of making it
US2627010A (en) * 1948-01-28 1953-01-27 Metals & Controls Corp Apparatus for soldering metal strips
US2534643A (en) * 1948-12-11 1950-12-19 Machlett Lab Inc Method for brazing beryllium
US2685728A (en) * 1949-02-21 1954-08-10 Bell Telephone Labor Inc Translating material and method of manufacture
US2627110A (en) * 1949-04-12 1953-02-03 Gen Electric Method of bonding nickel structures
US2609428A (en) * 1949-08-31 1952-09-02 Rca Corp Base electrodes for semiconductor devices
NL82014C (en:Method) * 1949-11-30
US2654059A (en) * 1951-05-26 1953-09-29 Bell Telephone Labor Inc Semiconductor signal translating device

Also Published As

Publication number Publication date
US2757324A (en) 1956-07-31
AT177475B (de) 1954-02-10
FR1070095A (fr) 1954-07-16
NL175652B (nl)
DE1027325B (de) 1958-04-03
GB724930A (en) 1955-02-23
BE517459A (en:Method)

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