NL8303976A - Werkwijze voor de vervaardiging van een halfgeleider-fotokathode. - Google Patents
Werkwijze voor de vervaardiging van een halfgeleider-fotokathode. Download PDFInfo
- Publication number
- NL8303976A NL8303976A NL8303976A NL8303976A NL8303976A NL 8303976 A NL8303976 A NL 8303976A NL 8303976 A NL8303976 A NL 8303976A NL 8303976 A NL8303976 A NL 8303976A NL 8303976 A NL8303976 A NL 8303976A
- Authority
- NL
- Netherlands
- Prior art keywords
- temperature
- semiconductor
- layer
- glass
- protective layer
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/12—Manufacture of electrodes or electrode systems of photo-emissive cathodes; of secondary-emission electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/34—Photo-emissive cathodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2201/00—Electrodes common to discharge tubes
- H01J2201/34—Photoemissive electrodes
- H01J2201/342—Cathodes
- H01J2201/3421—Composition of the emitting surface
- H01J2201/3423—Semiconductors, e.g. GaAs, NEA emitters
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Joining Of Glass To Other Materials (AREA)
- Electrodes Of Semiconductors (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE3242737 | 1982-11-19 | ||
DE19823242737 DE3242737A1 (de) | 1982-11-19 | 1982-11-19 | Verfahren zum herstellen einer halbleiter-photokathode |
Publications (1)
Publication Number | Publication Date |
---|---|
NL8303976A true NL8303976A (nl) | 1984-06-18 |
Family
ID=6178466
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL8303976A NL8303976A (nl) | 1982-11-19 | 1983-11-18 | Werkwijze voor de vervaardiging van een halfgeleider-fotokathode. |
Country Status (3)
Country | Link |
---|---|
DE (1) | DE3242737A1 (fr) |
GB (1) | GB2130434B (fr) |
NL (1) | NL8303976A (fr) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
RU2670498C1 (ru) * | 2017-10-16 | 2018-10-23 | Общество с ограниченной ответственностью "Катод" | Устройство для изготовления заготовки фотокатода фотоэлектронного прибора термокомпрессионным соединением полупроводниковой пластины со стеклянной заготовкой |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3769536A (en) * | 1972-01-28 | 1973-10-30 | Varian Associates | Iii-v photocathode bonded to a foreign transparent substrate |
FR2300413A1 (fr) * | 1975-02-04 | 1976-09-03 | Labo Electronique Physique | Fenetre |
FR2326031A1 (fr) * | 1975-09-26 | 1977-04-22 | Thomson Csf | Photocathode en couches minces, utilisee en transmission, et tube electronique comportant une telle photocathode |
DE2842492C2 (de) * | 1978-09-29 | 1986-04-17 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Verfahren zur Herstellung einer aus einem Halbleiter-Glas-Verbundwerkstoff bestehenden Photokathode |
DE2909956A1 (de) * | 1979-03-14 | 1980-09-18 | Licentia Gmbh | Halbleiter-glas-verbundwerkstoff |
DE2909985C3 (de) * | 1979-03-14 | 1981-10-22 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Verfahren zur Herstellung eines Halbleiter-Glas-Verbundwerkstoffs und Verwendung eines solchen Verbundwerkstoffes |
-
1982
- 1982-11-19 DE DE19823242737 patent/DE3242737A1/de active Granted
-
1983
- 1983-11-18 GB GB08330807A patent/GB2130434B/en not_active Expired
- 1983-11-18 NL NL8303976A patent/NL8303976A/nl not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
GB2130434B (en) | 1986-05-29 |
GB8330807D0 (en) | 1983-12-29 |
DE3242737C2 (fr) | 1990-12-13 |
GB2130434A (en) | 1984-05-31 |
DE3242737A1 (de) | 1984-05-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4343676A (en) | Etching a semiconductor material and automatically stopping same | |
NL8302541A (nl) | Werkwijze ter vervaardiging van een halfgeleiderinrichting, en halfgeleiderinrichting vervaardigd volgens de werkwijze. | |
US5250452A (en) | Deposition of germanium thin films on silicon dioxide employing interposed polysilicon layer | |
US2909453A (en) | Process for producing semiconductor devices | |
US4819039A (en) | Devices and device fabrication with borosilicate glass | |
US3298093A (en) | Bonding process | |
US4588455A (en) | Planar diffusion source | |
NL8303976A (nl) | Werkwijze voor de vervaardiging van een halfgeleider-fotokathode. | |
KR100257364B1 (ko) | 게터링 장치 및 방법 | |
NL8600983A (nl) | Werkwijze voor het vervaardigen van een substraat voor een halfgeleider. | |
EP1008567A1 (fr) | Procede permettant de coller des elements en verre | |
US3352725A (en) | Method of forming a gallium arsenide transistor by diffusion | |
US4332837A (en) | Passivation process and structure for self-alignment with the location of a mask | |
US4050967A (en) | Method of selective aluminum diffusion | |
US3998667A (en) | Barium aluminoborosilicate glass-ceramics for semiconductor doping | |
US5298831A (en) | Method of making photocathodes for image intensifier tubes | |
US4115223A (en) | Gallium arsenide photocathodes | |
US3577044A (en) | Integrated semiconductor devices and fabrication methods therefor | |
US5101247A (en) | Germanium silicon dioxide gate MOSFET | |
US3962000A (en) | Barium aluminoborosilicate glass-ceramics for semiconductor doping | |
US5637145A (en) | Method of vapor phase epitaxial growth | |
GB1150934A (en) | Improvements in and relating to semiconductor devices. | |
US3484854A (en) | Processing semiconductor materials | |
US4170491A (en) | Near-surface thermal gradient enhancement with opaque coatings | |
US3948695A (en) | Method of diffusing an impurity into semiconductor wafers |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A85 | Still pending on 85-01-01 | ||
BV | The patent application has lapsed |