US2869001A
(en)
*
|
|
1959-01-13 |
|
Welker |
US2841510A
(en)
*
|
|
1958-07-01 |
|
Method of producing p-n junctions in |
US2770762A
(en)
*
|
1949-04-01 |
1956-11-13 |
Int Standard Electric Corp |
Crystal triodes
|
NL87381C
(pt)
*
|
1950-03-31 |
|
|
|
NL159657B
(nl)
*
|
1950-06-28 |
|
Bayer Ag |
Werkwijze ter bereiding van een n-hydroxyimidothiocarbon- zuurester.
|
US2792538A
(en)
*
|
1950-09-14 |
1957-05-14 |
Bell Telephone Labor Inc |
Semiconductor translating devices with embedded electrode
|
US2791524A
(en)
*
|
1953-04-03 |
1957-05-07 |
Gen Electric |
Fabrication method for p-n junctions
|
BE523775A
(pt)
*
|
1950-09-29 |
|
|
|
GB688866A
(en)
*
|
1950-10-19 |
1953-03-18 |
Gen Electric Co Ltd |
Improvements in or relating to crystal rectifiers
|
US2762953A
(en)
*
|
1951-05-15 |
1956-09-11 |
Sylvania Electric Prod |
Contact rectifiers and methods
|
US2859140A
(en)
*
|
1951-07-16 |
1958-11-04 |
Sylvania Electric Prod |
Method of introducing impurities into a semi-conductor
|
US2771382A
(en)
*
|
1951-12-12 |
1956-11-20 |
Bell Telephone Labor Inc |
Method of fabricating semiconductors for signal translating devices
|
US2736849A
(en)
*
|
1951-12-31 |
1956-02-28 |
Hazeltine Research Inc |
Junction-type transistors
|
NL175652B
(nl)
*
|
1952-02-07 |
|
Krings Josef |
Glijschoen voor een spaninrichting van een greppelbouwinrichting.
|
DE976709C
(de)
*
|
1952-02-24 |
1964-03-12 |
Siemens Ag |
Verfahren zur Herstellung eines Halbleiterkristalls mit Zonen verschiedenen Leitungstyps bei A-B-Verbindungen
|
NL176299B
(nl)
*
|
1952-03-10 |
|
Hydrotech Int Inc |
Inrichting voor het losneembaar afsluiten van pijpleidingen.
|
US2842723A
(en)
*
|
1952-04-15 |
1958-07-08 |
Licentia Gmbh |
Controllable asymmetric electrical conductor systems
|
NL177655B
(nl)
*
|
1952-04-19 |
|
Johnson & Johnson |
Chirurgisch laken.
|
US2897105A
(en)
*
|
1952-04-19 |
1959-07-28 |
Ibm |
Formation of p-n junctions
|
US2743201A
(en)
*
|
1952-04-29 |
1956-04-24 |
Hughes Aircraft Co |
Monatomic semiconductor devices
|
US2829422A
(en)
*
|
1952-05-21 |
1958-04-08 |
Bell Telephone Labor Inc |
Methods of fabricating semiconductor signal translating devices
|
US2714566A
(en)
*
|
1952-05-28 |
1955-08-02 |
Rca Corp |
Method of treating a germanium junction rectifier
|
BE520380A
(pt)
*
|
1952-06-02 |
|
|
|
US2796562A
(en)
*
|
1952-06-02 |
1957-06-18 |
Rca Corp |
Semiconductive device and method of fabricating same
|
DE1007438B
(de)
*
|
1952-06-13 |
1957-05-02 |
Rca Corp |
Flaechentransistor nach dem Legierungsprinzip
|
US2793145A
(en)
*
|
1952-06-13 |
1957-05-21 |
Sylvania Electric Prod |
Method of forming a junction transistor
|
NL299567A
(pt)
*
|
1952-06-14 |
|
|
|
US2742383A
(en)
*
|
1952-08-09 |
1956-04-17 |
Hughes Aircraft Co |
Germanium junction-type semiconductor devices
|
US2842724A
(en)
*
|
1952-08-18 |
1958-07-08 |
Licentia Gmbh |
Conductor devices and method of making the same
|
NL180750B
(nl)
*
|
1952-08-20 |
|
Bristol Myers Co |
Werkwijze voor het bereiden van een 7-amino-3-cefem-4-carbonzuur derivaat door een 7-acylamino-3-cefem-4-carbonzuur derivaat om te zetten.
|
US2818536A
(en)
*
|
1952-08-23 |
1957-12-31 |
Hughes Aircraft Co |
Point contact semiconductor devices and methods of making same
|
DE1212640B
(de)
*
|
1952-10-24 |
1966-03-17 |
Siemens Ag |
Verfahren zum Herstellen eines Halbleiterbauelements mit einem durch Waermebehandeln zusammengefuegten Halbleiterkoerper
|
US2953730A
(en)
*
|
1952-11-07 |
1960-09-20 |
Rca Corp |
High frequency semiconductor devices
|
US2836522A
(en)
*
|
1952-11-15 |
1958-05-27 |
Rca Corp |
Junction type semiconductor device and method of its manufacture
|
US2784121A
(en)
*
|
1952-11-20 |
1957-03-05 |
Bell Telephone Labor Inc |
Method of fabricating semiconductor bodies for translating devices
|
US2763581A
(en)
*
|
1952-11-25 |
1956-09-18 |
Raytheon Mfg Co |
Process of making p-n junction crystals
|
NL94129C
(pt)
*
|
1952-12-29 |
|
|
|
US3162556A
(en)
*
|
1953-01-07 |
1964-12-22 |
Hupp Corp |
Introduction of disturbance points in a cadmium sulfide transistor
|
US2823148A
(en)
*
|
1953-03-02 |
1958-02-11 |
Rca Corp |
Method for removing portions of semiconductor device electrodes
|
US2754431A
(en)
*
|
1953-03-09 |
1956-07-10 |
Rca Corp |
Semiconductor devices
|
US2974236A
(en)
*
|
1953-03-11 |
1961-03-07 |
Rca Corp |
Multi-electrode semiconductor devices
|
US2801347A
(en)
*
|
1953-03-17 |
1957-07-30 |
Rca Corp |
Multi-electrode semiconductor devices
|
US2849342A
(en)
*
|
1953-03-17 |
1958-08-26 |
Rca Corp |
Semiconductor devices and method of making them
|
US3066249A
(en)
*
|
1953-04-07 |
1962-11-27 |
Sylvania Electric Prod |
Junction type semiconductor triode
|
US2822307A
(en)
*
|
1953-04-24 |
1958-02-04 |
Sylvania Electric Prod |
Technique for multiple p-n junctions
|
US2867732A
(en)
*
|
1953-05-14 |
1959-01-06 |
Ibm |
Current multiplication transistors and method of producing same
|
US2862787A
(en)
*
|
1953-05-27 |
1958-12-02 |
Paul F Seguin |
Process and apparatus for the preparation of semi-conductors from arsenides and phosphides and detectors formed therefrom
|
BE529698A
(pt)
*
|
1953-06-19 |
|
|
|
US2792539A
(en)
*
|
1953-07-07 |
1957-05-14 |
Sprague Electric Co |
Transistor construction
|
US2976426A
(en)
*
|
1953-08-03 |
1961-03-21 |
Rca Corp |
Self-powered semiconductive device
|
US2836520A
(en)
*
|
1953-08-17 |
1958-05-27 |
Westinghouse Electric Corp |
Method of making junction transistors
|
US2759855A
(en)
*
|
1953-08-24 |
1956-08-21 |
Eagle Picher Co |
Coated electronic device and method of making same
|
BE531626A
(pt)
*
|
1953-09-04 |
|
|
|
US2861017A
(en)
*
|
1953-09-30 |
1958-11-18 |
Honeywell Regulator Co |
Method of preparing semi-conductor devices
|
US3089219A
(en)
*
|
1953-10-19 |
1963-05-14 |
Raytheon Co |
Transistor assembly and method
|
US2823149A
(en)
*
|
1953-10-27 |
1958-02-11 |
Sprague Electric Co |
Process of forming barrier layers in crystalline bodies
|
US2844737A
(en)
*
|
1953-10-30 |
1958-07-22 |
Rca Corp |
Semi-conductive materials
|
US2803569A
(en)
*
|
1953-12-03 |
1957-08-20 |
Jacobs Harold |
Formation of junctions in semiconductors
|
US2829992A
(en)
*
|
1954-02-02 |
1958-04-08 |
Hughes Aircraft Co |
Fused junction semiconductor devices and method of making same
|
US2860218A
(en)
*
|
1954-02-04 |
1958-11-11 |
Gen Electric |
Germanium current controlling devices
|
US3010857A
(en)
*
|
1954-03-01 |
1961-11-28 |
Rca Corp |
Semi-conductor devices and methods of making same
|
BE536122A
(pt)
*
|
1954-03-05 |
|
|
|
BE536185A
(pt)
*
|
1954-03-05 |
1900-01-01 |
|
|
US2788300A
(en)
*
|
1954-03-10 |
1957-04-09 |
Sylvania Electric Prod |
Processing of alloy junction devices
|
US2788299A
(en)
*
|
1954-03-10 |
1957-04-09 |
Sylvania Electric Prod |
Method of forming junction transistors
|
US2821493A
(en)
*
|
1954-03-18 |
1958-01-28 |
Hughes Aircraft Co |
Fused junction transistors with regrown base regions
|
US2846346A
(en)
*
|
1954-03-26 |
1958-08-05 |
Philco Corp |
Semiconductor device
|
NL197918A
(pt)
*
|
1954-04-01 |
|
|
|
NL111118C
(pt)
*
|
1954-04-01 |
|
|
|
US2976433A
(en)
*
|
1954-05-26 |
1961-03-21 |
Rca Corp |
Radioactive battery employing semiconductors
|
US2936256A
(en)
*
|
1954-06-01 |
1960-05-10 |
Gen Electric |
Semiconductor devices
|
US2845373A
(en)
*
|
1954-06-01 |
1958-07-29 |
Rca Corp |
Semi-conductor devices and methods of making same
|
US2842466A
(en)
*
|
1954-06-15 |
1958-07-08 |
Gen Electric |
Method of making p-nu junction semiconductor unit
|
NL198430A
(pt)
*
|
1954-06-29 |
|
|
|
NL207969A
(pt)
*
|
1955-06-28 |
|
|
|
US2832898A
(en)
*
|
1954-07-12 |
1958-04-29 |
Rca Corp |
Time delay transistor trigger circuit
|
BE539938A
(pt)
*
|
1954-07-21 |
|
|
|
US2850412A
(en)
*
|
1954-08-13 |
1958-09-02 |
Sylvania Electric Prod |
Process for producing germaniumindium alloyed junctions
|
NL190331A
(pt)
*
|
1954-08-26 |
1900-01-01 |
|
|
NL199921A
(pt)
*
|
1954-08-27 |
|
|
|
US2992337A
(en)
*
|
1955-05-20 |
1961-07-11 |
Ibm |
Multiple collector transistors and circuits therefor
|
US2889499A
(en)
*
|
1954-09-27 |
1959-06-02 |
Ibm |
Bistable semiconductor device
|
US2787564A
(en)
*
|
1954-10-28 |
1957-04-02 |
Bell Telephone Labor Inc |
Forming semiconductive devices by ionic bombardment
|
NL103256C
(pt)
*
|
1954-10-29 |
|
|
|
US2874341A
(en)
*
|
1954-11-30 |
1959-02-17 |
Bell Telephone Labor Inc |
Ohmic contacts to silicon bodies
|
DE1073111B
(de)
*
|
1954-12-02 |
1960-01-14 |
Siemens Schuckertwerke Aktiengesellschaft Berlin und Erlangen |
Verfahren zur Herstellung eines Flachentransistors mit einer Oberflachenschicht erhöhter Storstellenkonzentration an den freien Stellen zwischen den Elektroden an einem einkristallmen Halbleiterkörper
|
US2804405A
(en)
*
|
1954-12-24 |
1957-08-27 |
Bell Telephone Labor Inc |
Manufacture of silicon devices
|
BE544843A
(pt)
*
|
1955-02-25 |
|
|
|
NL212855A
(pt)
*
|
1955-03-10 |
|
|
|
US3065534A
(en)
*
|
1955-03-30 |
1962-11-27 |
Itt |
Method of joining a semiconductor to a conductor
|
US2857527A
(en)
*
|
1955-04-28 |
1958-10-21 |
Rca Corp |
Semiconductor devices including biased p+p or n+n rectifying barriers
|
US2871149A
(en)
*
|
1955-05-02 |
1959-01-27 |
Sprague Electric Co |
Semiconductor method
|
US2763822A
(en)
*
|
1955-05-10 |
1956-09-18 |
Westinghouse Electric Corp |
Silicon semiconductor devices
|
US2887415A
(en)
*
|
1955-05-12 |
1959-05-19 |
Honeywell Regulator Co |
Method of making alloyed junction in a silicon wafer
|
US2941131A
(en)
*
|
1955-05-13 |
1960-06-14 |
Philco Corp |
Semiconductive apparatus
|
US2995665A
(en)
*
|
1955-05-20 |
1961-08-08 |
Ibm |
Transistors and circuits therefor
|
US2845374A
(en)
*
|
1955-05-23 |
1958-07-29 |
Texas Instruments Inc |
Semiconductor unit and method of making same
|
US2785096A
(en)
*
|
1955-05-25 |
1957-03-12 |
Texas Instruments Inc |
Manufacture of junction-containing silicon crystals
|
US2927222A
(en)
*
|
1955-05-27 |
1960-03-01 |
Philco Corp |
Polarizing semiconductive apparatus
|
US2993998A
(en)
*
|
1955-06-09 |
1961-07-25 |
Sprague Electric Co |
Transistor combinations
|
BE547274A
(pt)
*
|
1955-06-20 |
|
|
|
BE547665A
(pt)
*
|
1955-06-28 |
|
|
|
US2871100A
(en)
*
|
1955-07-22 |
1959-01-27 |
Rca Corp |
Method of preparing indium phosphide
|
US3818262A
(en)
*
|
1955-08-04 |
1974-06-18 |
Rca Corp |
Targets for television pickup tubes
|
US3398316A
(en)
*
|
1955-08-04 |
1968-08-20 |
Army Usa |
Infrared imaging device with photoconductive target
|
GB807995A
(en)
*
|
1955-09-02 |
1959-01-28 |
Gen Electric Co Ltd |
Improvements in or relating to the production of semiconductor bodies
|
US2898247A
(en)
*
|
1955-10-24 |
1959-08-04 |
Ibm |
Fabrication of diffused junction semi-conductor devices
|
US2863105A
(en)
*
|
1955-11-10 |
1958-12-02 |
Hoffman Electronics Corp |
Rectifying device
|
NL215555A
(pt)
*
|
1956-03-23 |
|
|
|
NL103828C
(pt)
*
|
1956-03-30 |
|
|
|
DE1116824B
(de)
*
|
1956-06-07 |
1961-11-09 |
Licentia Gmbh |
Verfahren zum Herstellen einer elektrischen Halbleiteranordnung mit mindestens einemp-n-UEbergang
|
US3035183A
(en)
*
|
1956-06-14 |
1962-05-15 |
Siemens And Halske Ag Berlin A |
Monostable, bistable double base diode circuit utilizing hall effect to perform switching function
|
US2914715A
(en)
*
|
1956-07-02 |
1959-11-24 |
Bell Telephone Labor Inc |
Semiconductor diode
|
US2836523A
(en)
*
|
1956-08-02 |
1958-05-27 |
Bell Telephone Labor Inc |
Manufacture of semiconductive devices
|
US2977256A
(en)
*
|
1956-08-16 |
1961-03-28 |
Gen Electric |
Semiconductor devices and methods of making same
|
NL276978A
(pt)
*
|
1956-09-05 |
|
|
|
US2930949A
(en)
*
|
1956-09-25 |
1960-03-29 |
Philco Corp |
Semiconductive device and method of fabrication thereof
|
US2862840A
(en)
*
|
1956-09-26 |
1958-12-02 |
Gen Electric |
Semiconductor devices
|
NL221194A
(pt)
*
|
1956-10-01 |
|
|
|
US2984890A
(en)
*
|
1956-12-24 |
1961-05-23 |
Gahagan Inc |
Crystal diode rectifier and method of making same
|
BE562375A
(pt)
*
|
1957-01-02 |
|
|
|
US2954307A
(en)
*
|
1957-03-18 |
1960-09-27 |
Shockley William |
Grain boundary semiconductor device and method
|
US2979427A
(en)
*
|
1957-03-18 |
1961-04-11 |
Shockley William |
Semiconductor device and method of making the same
|
US2968750A
(en)
*
|
1957-03-20 |
1961-01-17 |
Clevite Corp |
Transistor structure and method of making the same
|
US2953529A
(en)
*
|
1957-04-01 |
1960-09-20 |
Rca Corp |
Semiconductive radiation-sensitive device
|
US2989385A
(en)
*
|
1957-05-14 |
1961-06-20 |
Bell Telephone Labor Inc |
Process for ion bombarding and etching metal
|
US3054033A
(en)
*
|
1957-05-21 |
1962-09-11 |
Sony Corp |
Junction type semiconductor device
|
US2979668A
(en)
*
|
1957-09-16 |
1961-04-11 |
Bendix Corp |
Amplifier
|
NL106425C
(pt)
*
|
1958-01-14 |
|
|
|
NL224040A
(pt)
*
|
1958-01-14 |
|
|
|
US2998334A
(en)
*
|
1958-03-07 |
1961-08-29 |
Transitron Electronic Corp |
Method of making transistors
|
DE1093483B
(de)
*
|
1958-06-04 |
1960-11-24 |
Telefunken Gmbh |
Verfahren zur Herstellung von Halbleiteranordnungen mit zwei pn-UEbergaengen, insbesondere Silizium-Transistoren, durch Verschmelzen von zwei Halbleiterkristallen
|
NL113840C
(pt)
*
|
1958-06-14 |
|
|
|
NL241982A
(pt)
*
|
1958-08-13 |
1900-01-01 |
|
|
FR1210880A
(fr)
*
|
1958-08-29 |
1960-03-11 |
|
Perfectionnements aux transistors à effet de champ
|
BE569934A
(pt)
*
|
1958-12-18 |
|
|
|
US3069603A
(en)
*
|
1959-01-02 |
1962-12-18 |
Transitron Electronic Corp |
Semi-conductor device and method of making
|
US3082131A
(en)
*
|
1959-01-16 |
1963-03-19 |
Texas Instruments Inc |
Versatile transistor structure
|
BE590792A
(pt)
*
|
1959-05-12 |
|
|
|
US3108914A
(en)
*
|
1959-06-30 |
1963-10-29 |
Fairchild Camera Instr Co |
Transistor manufacturing process
|
US2959502A
(en)
*
|
1959-09-01 |
1960-11-08 |
Wolfgang W Gaertner |
Fabrication of semiconductor devices
|
US3476993A
(en)
*
|
1959-09-08 |
1969-11-04 |
Gen Electric |
Five layer and junction bridging terminal switching device
|
US3211595A
(en)
*
|
1959-11-02 |
1965-10-12 |
Hughes Aircraft Co |
P-type alloy bonding of semiconductors using a boron-gold alloy
|
US3056100A
(en)
*
|
1959-12-04 |
1962-09-25 |
Bell Telephone Labor Inc |
Temperature compensated field effect resistor
|
DE1194983B
(de)
*
|
1959-12-09 |
1965-06-16 |
Egyesuelt Izzolampa |
Verfahren zur Herstellung von Halbleiterbau-elementen, insbesondere Drifttransistoren
|
US3109760A
(en)
*
|
1960-02-15 |
1963-11-05 |
Cievite Corp |
P-nu junction and method
|
US3118794A
(en)
*
|
1960-09-06 |
1964-01-21 |
Bell Telephone Labor Inc |
Composite tunnel diode
|
NL269346A
(pt)
*
|
1960-09-20 |
|
|
|
US3288656A
(en)
*
|
1961-07-26 |
1966-11-29 |
Nippon Electric Co |
Semiconductor device
|
US3274454A
(en)
*
|
1961-09-21 |
1966-09-20 |
Mallory & Co Inc P R |
Semiconductor multi-stack for regulating charging of current producing cells
|
US3292128A
(en)
*
|
1961-12-26 |
1966-12-13 |
Gen Electric |
Semiconductor strain sensitive devices
|
DE1209211B
(de)
*
|
1962-03-27 |
1966-01-20 |
Siemens Ag |
Steuerbares Halbleiterbauelement mit mindestens drei pn-UEbergaengen und mit einer Steuerelektrode
|
CH407264A
(de)
*
|
1963-10-08 |
1966-02-15 |
Bbc Brown Boveri & Cie |
Verfahren zur Herstellung einer Gasdiffusionselektrode für elektrochemische Brennstoffelemente
|
US3280391A
(en)
*
|
1964-01-31 |
1966-10-18 |
Fairchild Camera Instr Co |
High frequency transistors
|
US3301716A
(en)
*
|
1964-09-10 |
1967-01-31 |
Rca Corp |
Semiconductor device fabrication
|
US3332137A
(en)
*
|
1964-09-28 |
1967-07-25 |
Rca Corp |
Method of isolating chips of a wafer of semiconductor material
|
US3333324A
(en)
*
|
1964-09-28 |
1967-08-01 |
Rca Corp |
Method of manufacturing semiconductor devices
|
US3375143A
(en)
*
|
1964-09-29 |
1968-03-26 |
Melpar Inc |
Method of making tunnel diode
|
US3972741A
(en)
*
|
1974-04-29 |
1976-08-03 |
General Electric Company |
Multiple p-n junction formation with an alloy droplet
|
DE2926785C2
(de)
*
|
1979-07-03 |
1985-12-12 |
HIGRATHERM electric GmbH, 7100 Heilbronn |
Bipolarer Transistor und Verfahren zu seiner Herstellung
|
US4381214A
(en)
*
|
1980-06-26 |
1983-04-26 |
The General Electric Company Limited |
Process for growing crystals
|
JPH0770476B2
(ja)
*
|
1985-02-08 |
1995-07-31 |
株式会社東芝 |
半導体装置の製造方法
|