NL8201226A - Lichtemitterende halfgeleiderinrichting. - Google Patents
Lichtemitterende halfgeleiderinrichting. Download PDFInfo
- Publication number
- NL8201226A NL8201226A NL8201226A NL8201226A NL8201226A NL 8201226 A NL8201226 A NL 8201226A NL 8201226 A NL8201226 A NL 8201226A NL 8201226 A NL8201226 A NL 8201226A NL 8201226 A NL8201226 A NL 8201226A
- Authority
- NL
- Netherlands
- Prior art keywords
- layer
- channel
- groove
- active region
- current
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 40
- 239000010410 layer Substances 0.000 claims description 87
- 239000000463 material Substances 0.000 claims description 28
- 238000000034 method Methods 0.000 claims description 25
- 230000005855 radiation Effects 0.000 claims description 23
- 238000005530 etching Methods 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 239000011247 coating layer Substances 0.000 claims description 8
- 230000003287 optical effect Effects 0.000 claims description 5
- 239000000969 carrier Substances 0.000 claims description 4
- 239000002245 particle Substances 0.000 claims description 4
- 239000013078 crystal Substances 0.000 claims description 3
- 230000000295 complement effect Effects 0.000 claims description 2
- 210000000056 organ Anatomy 0.000 claims 1
- 230000000644 propagated effect Effects 0.000 claims 1
- 230000002269 spontaneous effect Effects 0.000 description 12
- 238000010276 construction Methods 0.000 description 10
- 238000013016 damping Methods 0.000 description 9
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 5
- 230000008901 benefit Effects 0.000 description 5
- 239000002131 composite material Substances 0.000 description 5
- 238000010791 quenching Methods 0.000 description 5
- 230000000171 quenching effect Effects 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 4
- 241001660693 Trapezia Species 0.000 description 4
- 238000004943 liquid phase epitaxy Methods 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 230000035515 penetration Effects 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 241000234282 Allium Species 0.000 description 3
- 235000002732 Allium cepa var. cepa Nutrition 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005253 cladding Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 229910052763 palladium Inorganic materials 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910003086 Ti–Pt Inorganic materials 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 125000005842 heteroatom Chemical group 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 230000004224 protection Effects 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- 101100269850 Caenorhabditis elegans mask-1 gene Proteins 0.000 description 1
- 241000826860 Trapezium Species 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 238000005246 galvanizing Methods 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 235000015110 jellies Nutrition 0.000 description 1
- 239000008274 jelly Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
- H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2202—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure by making a groove in the upper laser structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2054—Methods of obtaining the confinement
- H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Geometry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/247,523 US4447905A (en) | 1981-03-25 | 1981-03-25 | Current confinement in semiconductor light emitting devices |
| US24752381 | 1981-03-25 | ||
| US24835781A | 1981-03-27 | 1981-03-27 | |
| US24835781 | 1981-03-27 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL8201226A true NL8201226A (nl) | 1982-10-18 |
Family
ID=26938732
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL8201226A NL8201226A (nl) | 1981-03-25 | 1982-03-24 | Lichtemitterende halfgeleiderinrichting. |
Country Status (4)
| Country | Link |
|---|---|
| DE (1) | DE3210749A1 (fr) |
| FR (1) | FR2502847A1 (fr) |
| GB (1) | GB2095474A (fr) |
| NL (1) | NL8201226A (fr) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL8401172A (nl) * | 1984-04-12 | 1985-11-01 | Philips Nv | Halfgeleiderlaser. |
| FR2563051B1 (fr) * | 1984-04-13 | 1987-08-07 | Telecommunications Sa | Diode laser a confinement electrique par jonction inverse |
| DE3527720A1 (de) * | 1985-08-02 | 1987-02-12 | Telefunken Electronic Gmbh | Lichtemittierendes halbleiterbauelement |
| NL8802936A (nl) * | 1988-11-29 | 1990-06-18 | Koninkl Philips Electronics Nv | Electroluminescerende diode met lage capaciteit. |
| DE4327029C2 (de) * | 1993-08-12 | 1998-04-16 | Telefunken Microelectron | Infrarot-Hochstromdiode aus einem Verbindungs-Halbleiter |
| DE102010008603A1 (de) * | 2010-02-19 | 2011-08-25 | OSRAM Opto Semiconductors GmbH, 93055 | Elektrisches Widerstandselement |
| US10547159B1 (en) * | 2018-12-12 | 2020-01-28 | Trumpf Photonics Inc. | Laterally tailoring current injection for laser diodes |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5248066B2 (fr) * | 1974-03-04 | 1977-12-07 | ||
| US3958263A (en) * | 1973-11-12 | 1976-05-18 | Bell Telephone Laboratories, Incorporated | Stress reduction in algaas-algaasp multilayer structures |
| US3996528A (en) * | 1975-12-31 | 1976-12-07 | International Business Machines Corporation | Folded cavity injection laser |
| FR2440616A1 (fr) * | 1978-10-31 | 1980-05-30 | Bouley Jean Claude | Laser a injection a double heterostructure a profil d'indice de refraction |
| FR2465337A1 (fr) * | 1979-09-11 | 1981-03-20 | Landreau Jean | Procede de fabrication d'un laser a semi-conducteur a confinements transverses optique et electrique et laser obtenu par ce procede |
-
1982
- 1982-03-23 FR FR8204902A patent/FR2502847A1/fr active Pending
- 1982-03-24 DE DE19823210749 patent/DE3210749A1/de not_active Withdrawn
- 1982-03-24 NL NL8201226A patent/NL8201226A/nl not_active Application Discontinuation
- 1982-03-25 GB GB8208752A patent/GB2095474A/en not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| GB2095474A (en) | 1982-09-29 |
| FR2502847A1 (fr) | 1982-10-01 |
| DE3210749A1 (de) | 1982-10-28 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| BV | The patent application has lapsed |