NL8201226A - Lichtemitterende halfgeleiderinrichting. - Google Patents
Lichtemitterende halfgeleiderinrichting. Download PDFInfo
- Publication number
- NL8201226A NL8201226A NL8201226A NL8201226A NL8201226A NL 8201226 A NL8201226 A NL 8201226A NL 8201226 A NL8201226 A NL 8201226A NL 8201226 A NL8201226 A NL 8201226A NL 8201226 A NL8201226 A NL 8201226A
- Authority
- NL
- Netherlands
- Prior art keywords
- layer
- channel
- groove
- active region
- current
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 40
- 239000010410 layer Substances 0.000 claims description 87
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- 241001660693 Trapezia Species 0.000 description 4
- 238000004943 liquid phase epitaxy Methods 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 230000035515 penetration Effects 0.000 description 4
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- 241000234282 Allium Species 0.000 description 3
- 235000002732 Allium cepa var. cepa Nutrition 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910003086 Ti–Pt Inorganic materials 0.000 description 2
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- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- 101100269850 Caenorhabditis elegans mask-1 gene Proteins 0.000 description 1
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- 229910052740 iodine Inorganic materials 0.000 description 1
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- 238000005019 vapor deposition process Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
- H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2202—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure by making a groove in the upper laser structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2054—Methods of obtaining the confinement
- H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Geometry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/247,523 US4447905A (en) | 1981-03-25 | 1981-03-25 | Current confinement in semiconductor light emitting devices |
| US24752381 | 1981-03-25 | ||
| US24835781A | 1981-03-27 | 1981-03-27 | |
| US24835781 | 1981-03-27 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL8201226A true NL8201226A (nl) | 1982-10-18 |
Family
ID=26938732
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL8201226A NL8201226A (nl) | 1981-03-25 | 1982-03-24 | Lichtemitterende halfgeleiderinrichting. |
Country Status (4)
| Country | Link |
|---|---|
| DE (1) | DE3210749A1 (fr) |
| FR (1) | FR2502847A1 (fr) |
| GB (1) | GB2095474A (fr) |
| NL (1) | NL8201226A (fr) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL8401172A (nl) * | 1984-04-12 | 1985-11-01 | Philips Nv | Halfgeleiderlaser. |
| FR2563051B1 (fr) * | 1984-04-13 | 1987-08-07 | Telecommunications Sa | Diode laser a confinement electrique par jonction inverse |
| DE3527720A1 (de) * | 1985-08-02 | 1987-02-12 | Telefunken Electronic Gmbh | Lichtemittierendes halbleiterbauelement |
| NL8802936A (nl) * | 1988-11-29 | 1990-06-18 | Koninkl Philips Electronics Nv | Electroluminescerende diode met lage capaciteit. |
| DE4327029C2 (de) * | 1993-08-12 | 1998-04-16 | Telefunken Microelectron | Infrarot-Hochstromdiode aus einem Verbindungs-Halbleiter |
| DE102010008603A1 (de) * | 2010-02-19 | 2011-08-25 | OSRAM Opto Semiconductors GmbH, 93055 | Elektrisches Widerstandselement |
| US10547159B1 (en) * | 2018-12-12 | 2020-01-28 | Trumpf Photonics Inc. | Laterally tailoring current injection for laser diodes |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5248066B2 (fr) * | 1974-03-04 | 1977-12-07 | ||
| US3958263A (en) * | 1973-11-12 | 1976-05-18 | Bell Telephone Laboratories, Incorporated | Stress reduction in algaas-algaasp multilayer structures |
| US3996528A (en) * | 1975-12-31 | 1976-12-07 | International Business Machines Corporation | Folded cavity injection laser |
| FR2440616A1 (fr) * | 1978-10-31 | 1980-05-30 | Bouley Jean Claude | Laser a injection a double heterostructure a profil d'indice de refraction |
| FR2465337A1 (fr) * | 1979-09-11 | 1981-03-20 | Landreau Jean | Procede de fabrication d'un laser a semi-conducteur a confinements transverses optique et electrique et laser obtenu par ce procede |
-
1982
- 1982-03-23 FR FR8204902A patent/FR2502847A1/fr active Pending
- 1982-03-24 DE DE19823210749 patent/DE3210749A1/de not_active Withdrawn
- 1982-03-24 NL NL8201226A patent/NL8201226A/nl not_active Application Discontinuation
- 1982-03-25 GB GB8208752A patent/GB2095474A/en not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| GB2095474A (en) | 1982-09-29 |
| DE3210749A1 (de) | 1982-10-28 |
| FR2502847A1 (fr) | 1982-10-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| BV | The patent application has lapsed |