NL8103752A - Werkwijze voor het maken van siliciuminrichtingen; apparatuur voor het uitvoeren van deze werkwijze. - Google Patents

Werkwijze voor het maken van siliciuminrichtingen; apparatuur voor het uitvoeren van deze werkwijze. Download PDF

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Publication number
NL8103752A
NL8103752A NL8103752A NL8103752A NL8103752A NL 8103752 A NL8103752 A NL 8103752A NL 8103752 A NL8103752 A NL 8103752A NL 8103752 A NL8103752 A NL 8103752A NL 8103752 A NL8103752 A NL 8103752A
Authority
NL
Netherlands
Prior art keywords
hydrogen chloride
mixture
oxidizing environment
hcl
steam
Prior art date
Application number
NL8103752A
Other languages
English (en)
Dutch (nl)
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of NL8103752A publication Critical patent/NL8103752A/nl

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H10P14/6308—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors
    • H10P14/6309—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors of silicon in uncombined form, i.e. pure silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/005—Oxydation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6322—Formation by thermal treatments

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
NL8103752A 1980-08-11 1981-08-10 Werkwijze voor het maken van siliciuminrichtingen; apparatuur voor het uitvoeren van deze werkwijze. NL8103752A (nl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US17690180A 1980-08-11 1980-08-11
US17690180 1980-08-11

Publications (1)

Publication Number Publication Date
NL8103752A true NL8103752A (nl) 1982-03-01

Family

ID=22646361

Family Applications (1)

Application Number Title Priority Date Filing Date
NL8103752A NL8103752A (nl) 1980-08-11 1981-08-10 Werkwijze voor het maken van siliciuminrichtingen; apparatuur voor het uitvoeren van deze werkwijze.

Country Status (5)

Country Link
JP (1) JPS5754331A (enExample)
DE (1) DE3131086A1 (enExample)
FR (1) FR2488443A1 (enExample)
GB (1) GB2082384A (enExample)
NL (1) NL8103752A (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0518182Y2 (enExample) * 1985-01-25 1993-05-14
US4606935A (en) * 1985-10-10 1986-08-19 International Business Machines Corporation Process and apparatus for producing high purity oxidation on a semiconductor substrate
US5721176A (en) * 1992-05-29 1998-02-24 Olin Corporation Use of oxalyl chloride to form chloride-doped silicon dioxide films of silicon substrates

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2026156A1 (en) * 1970-05-29 1971-12-09 Licentia Gmbh Thermal oxidizer for solid bodies - using water vapour - enriched carrier gas as oxidant
CA936791A (en) * 1970-11-10 1973-11-13 Northern Electric Company Limited Method of reducing the mobile ion contamination in thermally grown silicon dioxide
US4167915A (en) * 1977-03-09 1979-09-18 Atomel Corporation High-pressure, high-temperature gaseous chemical apparatus
NL7903198A (nl) * 1979-04-24 1980-10-28 Philips Nv Werkwijze voor het vervaardigen van een halfgeleider- inrichting en halfgeleiderinrichting vervaardigd volgens de werkwijze.

Also Published As

Publication number Publication date
JPS5754331A (enExample) 1982-03-31
GB2082384A (en) 1982-03-03
DE3131086A1 (de) 1982-03-25
FR2488443A1 (fr) 1982-02-12

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