NL8004108A - Inrichting voor het doen groeien van een kristallijn lichaam. - Google Patents
Inrichting voor het doen groeien van een kristallijn lichaam. Download PDFInfo
- Publication number
- NL8004108A NL8004108A NL8004108A NL8004108A NL8004108A NL 8004108 A NL8004108 A NL 8004108A NL 8004108 A NL8004108 A NL 8004108A NL 8004108 A NL8004108 A NL 8004108A NL 8004108 A NL8004108 A NL 8004108A
- Authority
- NL
- Netherlands
- Prior art keywords
- crucible
- lid
- die
- melt
- capillary
- Prior art date
Links
- 239000000463 material Substances 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 14
- 239000000155 melt Substances 0.000 claims description 12
- 239000000289 melt material Substances 0.000 claims description 11
- 239000007788 liquid Substances 0.000 claims description 8
- 238000002844 melting Methods 0.000 claims description 8
- 230000008018 melting Effects 0.000 claims description 8
- 238000004891 communication Methods 0.000 claims description 6
- 230000036433 growing body Effects 0.000 claims description 4
- 238000000465 moulding Methods 0.000 claims description 3
- 230000000712 assembly Effects 0.000 description 10
- 238000000429 assembly Methods 0.000 description 10
- 230000012010 growth Effects 0.000 description 7
- 230000013011 mating Effects 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000002178 crystalline material Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 230000000284 resting effect Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 238000005231 Edge Defined Film Fed Growth Methods 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910001602 chrysoberyl Inorganic materials 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 238000005755 formation reaction Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 230000021332 multicellular organism growth Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/34—Edge-defined film-fed crystal-growth using dies or slits
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US6550679A | 1979-08-10 | 1979-08-10 | |
| US6550679 | 1979-08-10 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL8004108A true NL8004108A (nl) | 1981-02-12 |
Family
ID=22063201
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL8004108A NL8004108A (nl) | 1979-08-10 | 1980-07-16 | Inrichting voor het doen groeien van een kristallijn lichaam. |
Country Status (9)
| Country | Link |
|---|---|
| JP (1) | JPS5632395A (https=) |
| AU (1) | AU536526B2 (https=) |
| CA (1) | CA1165212A (https=) |
| DE (1) | DE3030169A1 (https=) |
| FR (1) | FR2463203A1 (https=) |
| GB (1) | GB2055614B (https=) |
| IL (1) | IL60434A (https=) |
| IN (1) | IN154236B (https=) |
| NL (1) | NL8004108A (https=) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20210381097A1 (en) * | 2020-06-04 | 2021-12-09 | Applied Materials, Inc. | Vapor deposition apparatus and method for coating a substrate in a vacuum chamber |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4402786A (en) * | 1981-09-01 | 1983-09-06 | Mobil Solar Energy Corporation | Adjustable heat shield assembly |
| US5037622A (en) * | 1990-07-13 | 1991-08-06 | Mobil Solar Energy Corporation | Wet-tip die for EFG crystal growth apparatus |
| FR2769639B1 (fr) * | 1997-10-10 | 1999-11-12 | Commissariat Energie Atomique | Filiere pour le tirage de cristaux a partir d'un bain fondu |
-
1980
- 1980-06-25 CA CA000354711A patent/CA1165212A/en not_active Expired
- 1980-06-26 IN IN486/DEL/80A patent/IN154236B/en unknown
- 1980-06-29 IL IL6043480A patent/IL60434A/xx unknown
- 1980-07-02 GB GB8021616A patent/GB2055614B/en not_active Expired
- 1980-07-03 AU AU60080/80A patent/AU536526B2/en not_active Expired - Fee Related
- 1980-07-16 NL NL8004108A patent/NL8004108A/nl not_active Application Discontinuation
- 1980-08-06 FR FR8017377A patent/FR2463203A1/fr not_active Withdrawn
- 1980-08-08 DE DE19803030169 patent/DE3030169A1/de not_active Withdrawn
- 1980-08-11 JP JP11016480A patent/JPS5632395A/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20210381097A1 (en) * | 2020-06-04 | 2021-12-09 | Applied Materials, Inc. | Vapor deposition apparatus and method for coating a substrate in a vacuum chamber |
Also Published As
| Publication number | Publication date |
|---|---|
| CA1165212A (en) | 1984-04-10 |
| GB2055614B (en) | 1984-04-18 |
| FR2463203A1 (fr) | 1981-02-20 |
| GB2055614A (en) | 1981-03-11 |
| AU6008080A (en) | 1981-02-12 |
| JPS5632395A (en) | 1981-04-01 |
| IL60434A (en) | 1983-12-30 |
| DE3030169A1 (de) | 1981-02-26 |
| IN154236B (https=) | 1984-10-06 |
| AU536526B2 (en) | 1984-05-10 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| BA | A request for search or an international-type search has been filed | ||
| BB | A search report has been drawn up | ||
| A85 | Still pending on 85-01-01 | ||
| BV | The patent application has lapsed |