NL8003825A - Mengsel met oplosmiddel, dienend voor het langs galvanotechnische weg aanbrengen van een laag. - Google Patents

Mengsel met oplosmiddel, dienend voor het langs galvanotechnische weg aanbrengen van een laag. Download PDF

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Publication number
NL8003825A
NL8003825A NL8003825A NL8003825A NL8003825A NL 8003825 A NL8003825 A NL 8003825A NL 8003825 A NL8003825 A NL 8003825A NL 8003825 A NL8003825 A NL 8003825A NL 8003825 A NL8003825 A NL 8003825A
Authority
NL
Netherlands
Prior art keywords
mixture according
silicon
mixture
added
organic solvent
Prior art date
Application number
NL8003825A
Other languages
English (en)
Dutch (nl)
Original Assignee
Licentia Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Licentia Gmbh filed Critical Licentia Gmbh
Publication of NL8003825A publication Critical patent/NL8003825A/nl

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C30B7/12—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by electrolysis
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D9/00—Electrolytic coating other than with metals
    • C25D9/04—Electrolytic coating other than with metals with inorganic materials
    • C25D9/08—Electrolytic coating other than with metals with inorganic materials by cathodic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Electrolytic Production Of Non-Metals, Compounds, Apparatuses Therefor (AREA)
  • Chemical Vapour Deposition (AREA)
  • Silicon Compounds (AREA)
  • Photovoltaic Devices (AREA)
NL8003825A 1979-07-21 1980-07-02 Mengsel met oplosmiddel, dienend voor het langs galvanotechnische weg aanbrengen van een laag. NL8003825A (nl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19792929669 DE2929669A1 (de) 1979-07-21 1979-07-21 Gemisch eines loesungsmittels fuer die galvanische abscheidung
DE2929669 1979-07-21

Publications (1)

Publication Number Publication Date
NL8003825A true NL8003825A (nl) 1981-01-23

Family

ID=6076440

Family Applications (1)

Application Number Title Priority Date Filing Date
NL8003825A NL8003825A (nl) 1979-07-21 1980-07-02 Mengsel met oplosmiddel, dienend voor het langs galvanotechnische weg aanbrengen van een laag.

Country Status (5)

Country Link
JP (1) JPS5616695A (de)
DE (1) DE2929669A1 (de)
FR (1) FR2466516A1 (de)
GB (1) GB2055400B (de)
NL (1) NL8003825A (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59228997A (ja) * 1983-06-08 1984-12-22 Fuji Sharyo Kk 発酵槽
JPH0572941U (ja) * 1992-09-24 1993-10-05 富士車輌株式会社 発酵槽
JP2008231516A (ja) * 2007-03-20 2008-10-02 Toyota Motor Corp 金属酸化物薄膜、コンデンサ、水素分離膜−電解質膜接合体および燃料電池の製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2508803C3 (de) 1975-02-28 1982-07-08 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Verfahren zur Herstellung plattenförmiger Siliciumkristalle mit Kolumnarstruktur
US3990953A (en) * 1975-11-17 1976-11-09 Battelle Development Corporation Silicon electrodeposition

Also Published As

Publication number Publication date
FR2466516A1 (fr) 1981-04-10
DE2929669A1 (de) 1981-01-29
GB2055400A (en) 1981-03-04
JPS5616695A (en) 1981-02-17
GB2055400B (en) 1983-06-08

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Legal Events

Date Code Title Description
A85 Still pending on 85-01-01
BV The patent application has lapsed