NL79529C - - Google Patents

Info

Publication number
NL79529C
NL79529C NL79529DA NL79529C NL 79529 C NL79529 C NL 79529C NL 79529D A NL79529D A NL 79529DA NL 79529 C NL79529 C NL 79529C
Authority
NL
Netherlands
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of NL79529C publication Critical patent/NL79529C/xx

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • H03F3/14—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with amplifying devices having more than three electrodes or more than two PN junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
    • H03D7/12—Transference of modulation from one carrier to another, e.g. frequency-changing by means of semiconductor devices having more than two electrodes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
NL79529D 1948-09-24 NL79529C (US07494231-20090224-C00006.png)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US50897A US2502479A (en) 1948-09-24 1948-09-24 Semiconductor amplifier

Publications (1)

Publication Number Publication Date
NL79529C true NL79529C (US07494231-20090224-C00006.png)

Family

ID=21968142

Family Applications (1)

Application Number Title Priority Date Filing Date
NL79529D NL79529C (US07494231-20090224-C00006.png) 1948-09-24

Country Status (7)

Country Link
US (1) US2502479A (US07494231-20090224-C00006.png)
BE (1) BE490958A (US07494231-20090224-C00006.png)
CH (1) CH282857A (US07494231-20090224-C00006.png)
DE (1) DE890847C (US07494231-20090224-C00006.png)
FR (1) FR990032A (US07494231-20090224-C00006.png)
GB (1) GB700236A (US07494231-20090224-C00006.png)
NL (1) NL79529C (US07494231-20090224-C00006.png)

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US2691076A (en) * 1951-01-18 1954-10-05 Rca Corp Semiconductor signal translating system
US2701302A (en) * 1951-03-29 1955-02-01 Rca Corp Semiconductor frequency converter
US2794863A (en) * 1951-07-20 1957-06-04 Bell Telephone Labor Inc Semiconductor translating device and circuit
US2761020A (en) * 1951-09-12 1956-08-28 Bell Telephone Labor Inc Frequency selective semiconductor circuit elements
US2757243A (en) * 1951-09-17 1956-07-31 Bell Telephone Labor Inc Transistor circuits
US2736849A (en) * 1951-12-31 1956-02-28 Hazeltine Research Inc Junction-type transistors
US2776381A (en) * 1952-01-25 1957-01-01 Bell Telephone Labor Inc Multielectrode semiconductor circuit element
DE1006169B (de) * 1952-02-07 1957-04-11 Siemes & Halske Ag Anordnung zur Umwandlung mechanischer in elektrische Schwingungen
US2693568A (en) * 1952-03-05 1954-11-02 Bell Telephone Labor Inc Current and voltage regulation
NL176299B (nl) * 1952-03-10 Hydrotech Int Inc Inrichting voor het losneembaar afsluiten van pijpleidingen.
NL96818C (US07494231-20090224-C00006.png) * 1952-03-14
NL93080C (US07494231-20090224-C00006.png) * 1952-06-19
DE954624C (de) * 1952-06-19 1956-12-20 Western Electric Co Hochfrequenz-Halbleiterverstaerker
DE1031893B (de) * 1952-08-01 1958-06-12 Standard Elektrik Ag Verfahren zur aeusseren Formgebung von Halbleiteranordnungen, insbesondere fuer Gleichrichter- und Verstaerkerzwecke mit Halbleitern aus Germanium oder Silizium
BE523907A (US07494231-20090224-C00006.png) * 1952-10-31
DE1018917B (de) * 1952-11-08 1957-11-07 Dr Oskar Vierling Schaltungsanordnung fuer einen Kleinstverstaerker mit Kristalltrioden, insbesondere Germaniumtrioden
US2754455A (en) * 1952-11-29 1956-07-10 Rca Corp Power Transistors
DE966276C (de) * 1953-03-01 1957-07-18 Siemens Ag Halbleiteranordnung mit wenigstens zwei Steuerelektroden oder Steuerelektrodengruppenfuer elektronische Abtast- oder Schaltanordnungen
US2769926A (en) * 1953-03-09 1956-11-06 Gen Electric Non-linear resistance device
US2849342A (en) * 1953-03-17 1958-08-26 Rca Corp Semiconductor devices and method of making them
US2795744A (en) * 1953-06-12 1957-06-11 Bell Telephone Labor Inc Semiconductor signal translating devices
US2907934A (en) * 1953-08-12 1959-10-06 Gen Electric Non-linear resistance device
GB805292A (en) * 1953-12-02 1958-12-03 Philco Corp Semiconductor devices
NL102058C (US07494231-20090224-C00006.png) * 1953-12-31
US2829992A (en) * 1954-02-02 1958-04-08 Hughes Aircraft Co Fused junction semiconductor devices and method of making same
GB767311A (en) * 1954-03-08 1957-01-30 Gen Electric Co Ltd Improvements in or relating to semiconductor devices
US2931958A (en) * 1954-05-03 1960-04-05 Nat Res Dev Semi-conductor devices
US2802117A (en) * 1954-05-27 1957-08-06 Gen Electric Semi-conductor network
US2805347A (en) * 1954-05-27 1957-09-03 Bell Telephone Labor Inc Semiconductive devices
BE539001A (US07494231-20090224-C00006.png) * 1954-06-15
US2780752A (en) * 1954-06-16 1957-02-05 Gen Electric Semi-conductor network
US2770761A (en) * 1954-12-16 1956-11-13 Bell Telephone Labor Inc Semiconductor translators containing enclosed active junctions
US2937289A (en) * 1954-09-03 1960-05-17 Gen Electric Digital to analogue converter
BE541575A (US07494231-20090224-C00006.png) * 1954-09-27
US2926296A (en) * 1954-10-27 1960-02-23 Honeywell Regulator Co Transistor inverter
US2894152A (en) * 1955-05-16 1959-07-07 Ibm Crystal diode with improved recovery time
DE1035778B (de) * 1955-05-20 1958-08-07 Ibm Deutschland Transistor mit einem Halbleitergrundkoerper von einem Leitungstypus und mit drei oder mehr pn-UEbergaengen und einer oder mehreren Spitzenelektroden
NL106472C (US07494231-20090224-C00006.png) * 1955-05-25
DE1042128B (de) * 1955-11-12 1958-10-30 Siemens Ag Doppelbasistransistor zum Erzeugen von Schalt- oder Kippvorgaengen
DE1039649C2 (de) * 1956-02-13 1959-03-19 Siemens Ag Fadenhalbleiteranordnung mit zwei sperrfreien Basiselektroden verschiedenen Potentials und mindestens einer als Emitter dienenden sperrenden Elektrode
US2863070A (en) * 1956-03-21 1958-12-02 Gen Electric Double-base diode gated amplifier
FR1167044A (fr) * 1956-08-02 1958-11-19 Transistrons unipolaires à très haute fréquence
DE1045550B (de) * 1956-09-03 1958-12-04 Siemens Ag Fadenhalbleiteranordnung mit zwei sperrfreien Basiselektroden und mindestens einer Emitterelektrode mit stetiger oder stufenweiser Zunahme der Feldstaerke
US2913541A (en) * 1956-11-20 1959-11-17 Gen Electric Semiconductor wave filter
DE1094884B (de) * 1956-12-13 1960-12-15 Philips Nv Feldeffekt-Transistor mit einem Halbleiterkoerper aus zwei Zonen entgegengesetzten Leitfaehigkeitstyps und einer Nut zwischen den zwei ohmschen Elektroden und Verfahren zu seiner Herstellung
DE1054584B (de) * 1957-02-25 1959-04-09 Deutsche Bundespost Halbleiteranordnung zur wahlweisen Umschaltung eines Signals
DE1069784B (de) * 1957-04-27 1960-04-21 Süddeutsche Telefon-Apparate-, Kabel- und Drahtwerke A.G., TEKADE, Nürnberg Verfahren zur Herstellung einer sperrschichtfreien Elektrode auf dem Halbleiterkörper aus Germanium einer Halbleiteranordnung
GB887327A (en) * 1957-05-31 1962-01-17 Ibm Improvements in transistors
DE1084382B (de) * 1957-07-15 1960-06-30 Raytheon Mfg Co Halbleiteranordnung mit einem Halbleiterkoerper aus zwei Zonen entgegengesetzten Leitfaehigkeitstyps
BE572049A (US07494231-20090224-C00006.png) * 1957-12-03 1900-01-01
CH335368A (fr) * 1957-12-28 1958-12-31 Suisse Horlogerie Transistor
US3022472A (en) * 1958-01-22 1962-02-20 Bell Telephone Labor Inc Variable equalizer employing semiconductive element
US3116183A (en) * 1958-05-15 1963-12-31 Gen Electric Asymmetrically conductive device
US3025342A (en) * 1958-08-04 1962-03-13 Gen Dynamics Corp System for generating waveforms utilizing drift of carriers
NL245195A (US07494231-20090224-C00006.png) * 1958-12-11
US3138721A (en) * 1959-05-06 1964-06-23 Texas Instruments Inc Miniature semiconductor network diode and gate
US2989713A (en) * 1959-05-11 1961-06-20 Bell Telephone Labor Inc Semiconductor resistance element
DE1197987B (de) * 1960-01-26 1965-08-05 Fuji Electric Co Ltd Halbleiterbauelement mit Feldsteuerung fuer Schaltzwecke und Betriebsschaltungen
US3230428A (en) * 1960-05-02 1966-01-18 Texas Instruments Inc Field-effect transistor configuration
NL269039A (US07494231-20090224-C00006.png) * 1960-09-15
US3260900A (en) * 1961-04-27 1966-07-12 Merck & Co Inc Temperature compensating barrier layer semiconductor
BE624959A (US07494231-20090224-C00006.png) * 1961-11-20
FR1376515A (fr) * 1963-05-14 1964-10-31 Comp Generale Electricite Dispositif de blocage-déblocage à fonctionnement symétrique
DE1245425B (de) * 1965-06-23 1967-07-27 Telefunken Patent Elektromechanischer Wandler mit mechanisch empfindlichem Halbleiterbauelement
US20050205891A1 (en) * 2004-03-18 2005-09-22 Holm-Kennedy James W Distributed channel bipolar devices and architectures
WO2012003506A2 (en) * 2010-07-02 2012-01-05 Nuvotronics, Llc Three-dimensional microstructures
US9065163B1 (en) 2011-12-23 2015-06-23 Nuvotronics, Llc High frequency power combiner/divider
US8952752B1 (en) 2012-12-12 2015-02-10 Nuvotronics, Llc Smart power combiner

Also Published As

Publication number Publication date
FR990032A (fr) 1951-09-17
DE890847C (de) 1953-09-24
CH282857A (de) 1952-05-15
US2502479A (en) 1950-04-04
GB700236A (en) 1953-11-25
BE490958A (US07494231-20090224-C00006.png)

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