NL7920182A - Complementaire transistor voor een dieelektrisch geisoleerde geintegreerde keten ten gebruike bij hoge spanningen. - Google Patents

Complementaire transistor voor een dieelektrisch geisoleerde geintegreerde keten ten gebruike bij hoge spanningen. Download PDF

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Publication number
NL7920182A
NL7920182A NL7920182A NL7920182A NL7920182A NL 7920182 A NL7920182 A NL 7920182A NL 7920182 A NL7920182 A NL 7920182A NL 7920182 A NL7920182 A NL 7920182A NL 7920182 A NL7920182 A NL 7920182A
Authority
NL
Netherlands
Prior art keywords
cavities
zone
layer
semiconductor device
semiconductor material
Prior art date
Application number
NL7920182A
Other languages
English (en)
Dutch (nl)
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of NL7920182A publication Critical patent/NL7920182A/nl

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76297—Dielectric isolation using EPIC techniques, i.e. epitaxial passivated integrated circuit
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H01L27/0826—Combination of vertical complementary transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
NL7920182A 1978-12-20 1979-12-06 Complementaire transistor voor een dieelektrisch geisoleerde geintegreerde keten ten gebruike bij hoge spanningen. NL7920182A (nl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US05/971,632 US4232328A (en) 1978-12-20 1978-12-20 Dielectrically-isolated integrated circuit complementary transistors for high voltage use
US97163278 1978-12-20

Publications (1)

Publication Number Publication Date
NL7920182A true NL7920182A (nl) 1980-10-31

Family

ID=25518630

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7920182A NL7920182A (nl) 1978-12-20 1979-12-06 Complementaire transistor voor een dieelektrisch geisoleerde geintegreerde keten ten gebruike bij hoge spanningen.

Country Status (12)

Country Link
US (1) US4232328A (it)
JP (1) JPH0413863B2 (it)
BE (1) BE880726A (it)
CA (1) CA1126875A (it)
DE (1) DE2953394T1 (it)
ES (1) ES487064A1 (it)
FR (1) FR2445027A1 (it)
GB (1) GB2049281A (it)
IT (1) IT1126601B (it)
NL (1) NL7920182A (it)
SE (1) SE424028B (it)
WO (1) WO1980001335A1 (it)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1177148A (en) * 1981-10-06 1984-10-30 Robert J. Mcintyre Avalanche photodiode array
US4631570A (en) * 1984-07-03 1986-12-23 Motorola, Inc. Integrated circuit having buried oxide isolation and low resistivity substrate for power supply interconnection
US5448100A (en) * 1985-02-19 1995-09-05 Harris Corporation Breakdown diode structure
JPH01123417A (ja) * 1987-11-07 1989-05-16 Mitsubishi Electric Corp 半導体装置の製造方法
US5416354A (en) * 1989-01-06 1995-05-16 Unitrode Corporation Inverted epitaxial process semiconductor devices
WO1991011028A1 (en) * 1990-01-08 1991-07-25 Harris Corporation Thin, dielectrically isolated island resident transistor structure having low collector resistance
US6375741B2 (en) 1991-03-06 2002-04-23 Timothy J. Reardon Semiconductor processing spray coating apparatus
JP2654268B2 (ja) * 1991-05-13 1997-09-17 株式会社東芝 半導体装置の使用方法
US5744851A (en) * 1992-01-27 1998-04-28 Harris Corporation Biasing of island-surrounding material to suppress reduction of breakdown voltage due to field plate acting on buried layer/island junction between high and low impurity concentration regions
GB2344689A (en) * 1998-12-07 2000-06-14 Ericsson Telefon Ab L M Analogue switch
US20020115198A1 (en) * 2000-09-20 2002-08-22 Nerenberg Michael I. Microfabricated ultrasound array for use as resonant sensors

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL91725C (it) * 1952-12-16
US3850707A (en) * 1964-09-09 1974-11-26 Honeywell Inc Semiconductors
US3412295A (en) * 1965-10-19 1968-11-19 Sprague Electric Co Monolithic structure with three-region complementary transistors
DE1816081A1 (de) * 1968-12-20 1970-06-25 Siemens Ag Integrierte Halbleiterschaltungsanordnung
GB1289953A (it) * 1969-01-16 1972-09-20
GB1258382A (it) * 1969-01-16 1971-12-30
US3628064A (en) * 1969-03-13 1971-12-14 Signetics Corp Voltage to frequency converter with constant current sources
US3953255A (en) * 1971-12-06 1976-04-27 Harris Corporation Fabrication of matched complementary transistors in integrated circuits
US3865649A (en) * 1972-10-16 1975-02-11 Harris Intertype Corp Fabrication of MOS devices and complementary bipolar transistor devices in a monolithic substrate
US3944447A (en) * 1973-03-12 1976-03-16 Ibm Corporation Method for fabrication of integrated circuit structure with full dielectric isolation utilizing selective oxidation
US3895392A (en) * 1973-04-05 1975-07-15 Signetics Corp Bipolar transistor structure having ion implanted region and method
DE2451861A1 (de) * 1973-11-02 1975-05-15 Hitachi Ltd Integrierte halbleiterschaltungsbauelemente
US4042949A (en) * 1974-05-08 1977-08-16 Motorola, Inc. Semiconductor devices
US4146905A (en) * 1974-06-18 1979-03-27 U.S. Philips Corporation Semiconductor device having complementary transistor structures and method of manufacturing same
NL7408110A (nl) * 1974-06-18 1975-12-22 Philips Nv Halfgeleiderinrichting met complementaire tran- sistorstrukturen en werkwijze ter vervaardiging daarvan.
US3990102A (en) * 1974-06-28 1976-11-02 Hitachi, Ltd. Semiconductor integrated circuits and method of manufacturing the same
US4086610A (en) * 1974-06-28 1978-04-25 Motorola, Inc. High reliability epi-base radiation hardened power transistor

Also Published As

Publication number Publication date
GB2049281A (en) 1980-12-17
US4232328A (en) 1980-11-04
IT7928204A0 (it) 1979-12-19
GB2049281B (it)
JPS55501040A (it) 1980-11-27
IT1126601B (it) 1986-05-21
WO1980001335A1 (en) 1980-06-26
CA1126875A (en) 1982-06-29
SE8005704L (sv) 1980-08-13
ES487064A1 (es) 1980-09-16
DE2953394C2 (it) 1993-01-07
DE2953394T1 (de) 1981-01-08
JPH0413863B2 (it) 1992-03-11
BE880726A (fr) 1980-04-16
FR2445027A1 (fr) 1980-07-18
FR2445027B1 (it) 1984-03-09
SE424028B (sv) 1982-06-21

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