NL7802222A - Halfgeleiderinrichting. - Google Patents

Halfgeleiderinrichting.

Info

Publication number
NL7802222A
NL7802222A NL7802222A NL7802222A NL7802222A NL 7802222 A NL7802222 A NL 7802222A NL 7802222 A NL7802222 A NL 7802222A NL 7802222 A NL7802222 A NL 7802222A NL 7802222 A NL7802222 A NL 7802222A
Authority
NL
Netherlands
Prior art keywords
semi
guide device
guide
Prior art date
Application number
NL7802222A
Other languages
English (en)
Dutch (nl)
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of NL7802222A publication Critical patent/NL7802222A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/915—Active solid-state devices, e.g. transistors, solid-state diodes with titanium nitride portion or region

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Geometry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
NL7802222A 1977-03-01 1978-02-28 Halfgeleiderinrichting. NL7802222A (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/773,320 US4124826A (en) 1977-03-01 1977-03-01 Current confinement in semiconductor lasers

Publications (1)

Publication Number Publication Date
NL7802222A true NL7802222A (nl) 1978-09-05

Family

ID=25097870

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7802222A NL7802222A (nl) 1977-03-01 1978-02-28 Halfgeleiderinrichting.

Country Status (5)

Country Link
US (1) US4124826A (xx)
JP (1) JPS53134378A (xx)
CA (1) CA1110367A (xx)
DE (1) DE2808508A1 (xx)
NL (1) NL7802222A (xx)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2406896A1 (fr) * 1977-10-18 1979-05-18 Thomson Csf Diode emettrice et receptrice en lumiere notamment pour telecommunications optiques
NL7800583A (nl) * 1978-01-18 1979-07-20 Philips Nv Werkwijze voor het vervaardigen van een in- richting en inrichting vervaardigd met behulp van de werkwijze.
FR2465337A1 (fr) * 1979-09-11 1981-03-20 Landreau Jean Procede de fabrication d'un laser a semi-conducteur a confinements transverses optique et electrique et laser obtenu par ce procede
US4409727A (en) * 1979-11-14 1983-10-18 Ncr Corporation Methods of making narrow channel field effect transistors
US4318752A (en) * 1980-05-16 1982-03-09 Bell Telephone Laboratories, Incorporated Heterojunction semiconductor laser fabrication utilizing laser radiation
EP0077825B1 (en) * 1981-05-06 1987-08-12 University of Illinois Foundation Method of forming wide bandgap region within multilayer semiconductors
US4378255A (en) * 1981-05-06 1983-03-29 University Of Illinois Foundation Method for producing integrated semiconductor light emitter
US4416011A (en) * 1981-07-06 1983-11-15 Rca Corporation Semiconductor light emitting device
US4393504A (en) * 1981-08-24 1983-07-12 Rca Corporation High power semiconductor laser
DE3329107A1 (de) * 1983-08-11 1985-02-21 Siemens AG, 1000 Berlin und 8000 München Laserdiode mit homogenisierter mechanischer spannung und/oder waermeableitung
WO1985002943A1 (en) * 1983-12-19 1985-07-04 Mobil Solar Energy Corporation Method of fabricating solar cells
US5160492A (en) * 1989-04-24 1992-11-03 Hewlett-Packard Company Buried isolation using ion implantation and subsequent epitaxial growth
JPH03237784A (ja) * 1990-02-15 1991-10-23 Omron Corp 半導体素子およびその製造方法
US5552335A (en) * 1991-03-29 1996-09-03 Electronic Decisions, Inc. Acoustic charge transport integrated circuit process
US5358877A (en) * 1991-03-29 1994-10-25 Electronic Decisions Inc. Soft proton isolation process for an acoustic charge transport integrated circuit
JP3122324B2 (ja) * 1995-02-20 2001-01-09 三菱電線工業株式会社 半導体発光素子
US6114225A (en) * 1998-11-16 2000-09-05 Industrial Technology Research Institute Local penetrating proton beam transmutation doping method for silicon
US6214750B1 (en) 1999-01-04 2001-04-10 Industrial Technology Research Institute Alternative structure to SOI using proton beams
US7205632B2 (en) * 2004-04-05 2007-04-17 Taiwan Semiconductor Manufacturing Company, Ltd. Anti-scattering attenuator structure for high energy particle radiation into integrated circuits
WO2006024025A2 (en) * 2004-08-25 2006-03-02 Nanosource, Inc. Optical-mode-confined and electrical-current-confined semiconductor light sources utilizing resistive interfacial layers
US20100020837A1 (en) * 2008-07-22 2010-01-28 Avago Technologies Fiber Ip (Singapore) Pte. Ltd. Semiconductor light emission device having an improved current confinement structure, and method for confining current in a semiconductor light emission device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE791929A (fr) * 1971-12-02 1973-03-16 Western Electric Co Procede de fabrication de regions isolantes dans un corps de semi-conducteur
US3936322A (en) * 1974-07-29 1976-02-03 International Business Machines Corporation Method of making a double heterojunction diode laser
JPS51132984A (en) * 1975-05-14 1976-11-18 Sharp Corp Semiconductor laser device
JPS5296878A (en) * 1976-02-09 1977-08-15 Sharp Corp Manufacture of semiconductor laser element

Also Published As

Publication number Publication date
DE2808508A1 (de) 1978-09-07
US4124826A (en) 1978-11-07
CA1110367A (en) 1981-10-06
JPS53134378A (en) 1978-11-22

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Legal Events

Date Code Title Description
BB A search report has been drawn up
BV The patent application has lapsed