NL7713457A - Halfgeleiderinrichting. - Google Patents
Halfgeleiderinrichting.Info
- Publication number
- NL7713457A NL7713457A NL7713457A NL7713457A NL7713457A NL 7713457 A NL7713457 A NL 7713457A NL 7713457 A NL7713457 A NL 7713457A NL 7713457 A NL7713457 A NL 7713457A NL 7713457 A NL7713457 A NL 7713457A
- Authority
- NL
- Netherlands
- Prior art keywords
- semi
- guide device
- guide
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
- H01L27/0218—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of field effect structures
- H01L27/0225—Charge injection in static induction transistor logic structures [SITL]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
- H01L27/0711—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors
- H01L27/0722—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors in combination with lateral bipolar transistors and diodes, or capacitors, or resistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Junction Field-Effect Transistors (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP51147253A JPS588147B2 (ja) | 1976-12-08 | 1976-12-08 | 半導体集積回路装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
NL7713457A true NL7713457A (nl) | 1978-06-12 |
Family
ID=15426038
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL7713457A NL7713457A (nl) | 1976-12-08 | 1977-12-06 | Halfgeleiderinrichting. |
Country Status (3)
Country | Link |
---|---|
JP (1) | JPS588147B2 (nl) |
DE (1) | DE2754734A1 (nl) |
NL (1) | NL7713457A (nl) |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL7107040A (nl) * | 1971-05-22 | 1972-11-24 |
-
1976
- 1976-12-08 JP JP51147253A patent/JPS588147B2/ja not_active Expired
-
1977
- 1977-12-06 NL NL7713457A patent/NL7713457A/nl not_active Application Discontinuation
- 1977-12-08 DE DE19772754734 patent/DE2754734A1/de not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
DE2754734A1 (de) | 1978-06-15 |
JPS588147B2 (ja) | 1983-02-14 |
JPS5371574A (en) | 1978-06-26 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
BV | The patent application has lapsed |