NL7701379A - Licht-uitzendend halfgeleiderelement. - Google Patents

Licht-uitzendend halfgeleiderelement.

Info

Publication number
NL7701379A
NL7701379A NL7701379A NL7701379A NL7701379A NL 7701379 A NL7701379 A NL 7701379A NL 7701379 A NL7701379 A NL 7701379A NL 7701379 A NL7701379 A NL 7701379A NL 7701379 A NL7701379 A NL 7701379A
Authority
NL
Netherlands
Prior art keywords
semiconductor element
light emissioning
emissioning
light
semiconductor
Prior art date
Application number
NL7701379A
Other languages
English (en)
Dutch (nl)
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of NL7701379A publication Critical patent/NL7701379A/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
NL7701379A 1976-02-27 1977-02-09 Licht-uitzendend halfgeleiderelement. NL7701379A (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000776A JPS52104091A (en) 1976-02-27 1976-02-27 Light-emitting semiconductor

Publications (1)

Publication Number Publication Date
NL7701379A true NL7701379A (nl) 1977-08-30

Family

ID=12015056

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7701379A NL7701379A (nl) 1976-02-27 1977-02-09 Licht-uitzendend halfgeleiderelement.

Country Status (6)

Country Link
US (1) US4122486A (OSRAM)
JP (1) JPS52104091A (OSRAM)
DE (1) DE2702935A1 (OSRAM)
FR (1) FR2342560A1 (OSRAM)
GB (1) GB1540004A (OSRAM)
NL (1) NL7701379A (OSRAM)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS546787A (en) * 1977-06-17 1979-01-19 Matsushita Electric Ind Co Ltd Luminous element
US4354140A (en) * 1979-05-28 1982-10-12 Zaidan Hojin Handotai Kenkyu Shinkokai Light-emitting semiconductor
JPS56111276A (en) * 1980-02-07 1981-09-02 Semiconductor Res Found Luminous semiconductor device
GB2070859B (en) * 1980-02-07 1984-03-21 Stanley Electric Co Ltd Hetero-junction light-emitting diode
DE3041358A1 (de) * 1980-11-03 1982-06-09 Siemens AG, 1000 Berlin und 8000 München Lichtreflektirender ohmscher kontakt fuer bauelemente
JPS57178386A (en) * 1981-04-27 1982-11-02 Stanley Electric Co Ltd Light emitting diode
US4477824A (en) * 1982-03-04 1984-10-16 At&T Bell Laboratories Light emitting device for optical switching
US4870468A (en) * 1986-09-12 1989-09-26 Kabushiki Kaisha Toshiba Semiconductor light-emitting device and method of manufacturing the same
US4966862A (en) * 1989-08-28 1990-10-30 Cree Research, Inc. Method of production of light emitting diodes
GB2252871B (en) * 1991-02-16 1994-11-02 Robin Mukerjee Wide surface LED
DE10234977A1 (de) * 2002-07-31 2004-02-12 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Dünnschicht-Halbleiterbauelement auf GaN-Basis
EP1668687A4 (en) * 2003-09-19 2007-11-07 Tinggi Tech Private Ltd FABRICATION OF A CONDUCTIVE METAL LAYER ON SEMICONDUCTOR COMPONENTS
CN100442557C (zh) * 2004-06-30 2008-12-10 奥斯兰姆奥普托半导体有限责任公司 用于施加到ⅲ/ⅴ化合物半导体材料上的具有多个层的反射层系统
DE102004040277B4 (de) * 2004-06-30 2015-07-30 Osram Opto Semiconductors Gmbh Reflektierendes Schichtsystem mit einer Mehrzahl von Schichten zur Aufbringung auf ein III/V-Verbindungshalbleitermaterial
EP2387081B1 (en) * 2010-05-11 2015-09-30 Samsung Electronics Co., Ltd. Semiconductor light emitting device and method for fabricating the same

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4866384A (OSRAM) * 1971-12-14 1973-09-11
JPS5057189A (OSRAM) * 1973-09-17 1975-05-19
JPS5115983A (en) * 1974-07-31 1976-02-07 Hitachi Ltd Handotaisochino seizohoho
JPS5734671B2 (OSRAM) * 1974-09-20 1982-07-24

Also Published As

Publication number Publication date
FR2342560B1 (OSRAM) 1979-10-05
US4122486A (en) 1978-10-24
JPS52104091A (en) 1977-09-01
GB1540004A (en) 1979-02-07
FR2342560A1 (fr) 1977-09-23
DE2702935A1 (de) 1977-09-01

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Legal Events

Date Code Title Description
BV The patent application has lapsed