NL7701011A - Veldeffectinrichting ingangs beschermingsstruc- tuur. - Google Patents
Veldeffectinrichting ingangs beschermingsstruc- tuur.Info
- Publication number
- NL7701011A NL7701011A NL7701011A NL7701011A NL7701011A NL 7701011 A NL7701011 A NL 7701011A NL 7701011 A NL7701011 A NL 7701011A NL 7701011 A NL7701011 A NL 7701011A NL 7701011 A NL7701011 A NL 7701011A
- Authority
- NL
- Netherlands
- Prior art keywords
- field effect
- effect device
- protection structure
- device input
- input protection
- Prior art date
Links
- 230000005669 field effect Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
- H01L27/0727—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/52—Circuit arrangements for protecting such amplifiers
- H03F1/523—Circuit arrangements for protecting such amplifiers for amplifiers using field-effect devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
- H03K17/0812—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
- H03K17/08122—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Amplifiers (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/699,527 US4057844A (en) | 1976-06-24 | 1976-06-24 | MOS input protection structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL7701011A true NL7701011A (nl) | 1977-12-28 |
Family
ID=24809722
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL7701011A NL7701011A (nl) | 1976-06-24 | 1977-02-01 | Veldeffectinrichting ingangs beschermingsstruc- tuur. |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US4057844A (fr) |
| JP (1) | JPS531478A (fr) |
| CA (1) | CA1068008A (fr) |
| DE (1) | DE2707843B2 (fr) |
| FR (1) | FR2356273A1 (fr) |
| GB (1) | GB1547543A (fr) |
| NL (1) | NL7701011A (fr) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5715459A (en) * | 1980-07-01 | 1982-01-26 | Fujitsu Ltd | Semiconductor integrated circuit |
| JPS5780774A (en) * | 1980-11-07 | 1982-05-20 | Hitachi Ltd | Semiconductor integrated circuit device |
| US4402003A (en) * | 1981-01-12 | 1983-08-30 | Supertex, Inc. | Composite MOS/bipolar power device |
| CA1175503A (fr) * | 1981-07-17 | 1984-10-02 | Andreas Demetriou | Circuit d'excitation a cmos |
| EP0090280A3 (fr) * | 1982-03-25 | 1986-03-19 | Nissan Motor Co., Ltd. | Dispositif semi-conducteur intégré et son procédé de fabrication |
| US4679112A (en) * | 1986-07-31 | 1987-07-07 | General Motors Corporation | Transistor protection circuit for automotive motor control applications |
| US4802054A (en) * | 1987-03-13 | 1989-01-31 | Motorola, Inc. | Input protection for an integrated circuit |
| JPH01262654A (ja) * | 1988-04-14 | 1989-10-19 | Toshiba Corp | 半導体装置 |
| JPH01267985A (ja) * | 1988-04-20 | 1989-10-25 | Fuji Photo Film Co Ltd | 発熱抵抗体の駆動回路 |
| CA1314946C (fr) * | 1989-02-01 | 1993-03-23 | Colin Harris | Protection d'entrees de tension analogiques de reference et de polarisation |
| US4930037A (en) * | 1989-02-16 | 1990-05-29 | Advaced Micro Devices, Inc. | Input voltage protection system |
| US4950924A (en) * | 1989-05-11 | 1990-08-21 | Northern Telecom Limited | High speed noise immune bipolar logic family |
| JP2589814B2 (ja) * | 1989-07-19 | 1997-03-12 | 松下電器産業株式会社 | クロック抽出装置およびトラッキング誤差信号採取装置 |
| US5032742A (en) * | 1989-07-28 | 1991-07-16 | Dallas Semiconductor Corporation | ESD circuit for input which exceeds power supplies in normal operation |
| DE4118441A1 (de) * | 1991-06-05 | 1992-12-10 | Siemens Ag | Schaltungsanordnung zum schutz gegen ueberspannungen an eingaengen integrierter mos-schaltkreise |
| EP0559243B1 (fr) * | 1992-02-03 | 1997-04-02 | Koninklijke Philips Electronics N.V. | Circuit comparateur muni d'un atténuateur de signal d'entrée |
| US5319259A (en) * | 1992-12-22 | 1994-06-07 | National Semiconductor Corp. | Low voltage input and output circuits with overvoltage protection |
| US6069493A (en) * | 1997-11-28 | 2000-05-30 | Motorola, Inc. | Input circuit and method for protecting the input circuit |
| US6380027B2 (en) | 1999-01-04 | 2002-04-30 | International Business Machines Corporation | Dual tox trench dram structures and process using V-groove |
| JP4346322B2 (ja) * | 2003-02-07 | 2009-10-21 | 株式会社ルネサステクノロジ | 半導体装置 |
| US20110122539A1 (en) * | 2009-11-20 | 2011-05-26 | Nxp B.V. | Method and structure for over-voltage tolerant cmos input-output circuits |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3395290A (en) * | 1965-10-08 | 1968-07-30 | Gen Micro Electronics Inc | Protective circuit for insulated gate metal oxide semiconductor fieldeffect device |
| US3408511A (en) * | 1966-05-13 | 1968-10-29 | Motorola Inc | Chopper circuit capable of handling large bipolarity signals |
| JPS468254B1 (fr) * | 1967-11-13 | 1971-03-02 | ||
| US3924265A (en) * | 1973-08-29 | 1975-12-02 | American Micro Syst | Low capacitance V groove MOS NOR gate and method of manufacture |
-
1976
- 1976-06-24 US US05/699,527 patent/US4057844A/en not_active Expired - Lifetime
-
1977
- 1977-01-12 CA CA269,582A patent/CA1068008A/fr not_active Expired
- 1977-02-01 NL NL7701011A patent/NL7701011A/xx not_active Application Discontinuation
- 1977-02-09 GB GB5431/77A patent/GB1547543A/en not_active Expired
- 1977-02-16 FR FR7704460A patent/FR2356273A1/fr not_active Withdrawn
- 1977-02-23 DE DE2707843A patent/DE2707843B2/de not_active Withdrawn
- 1977-06-24 JP JP7540677A patent/JPS531478A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| JPS531478A (en) | 1978-01-09 |
| GB1547543A (en) | 1979-06-20 |
| DE2707843A1 (de) | 1977-12-29 |
| CA1068008A (fr) | 1979-12-11 |
| US4057844A (en) | 1977-11-08 |
| FR2356273A1 (fr) | 1978-01-20 |
| DE2707843B2 (de) | 1979-10-04 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| BV | The patent application has lapsed |