NL7611983A - Werkwijze voor de inplantatie van ionen. - Google Patents

Werkwijze voor de inplantatie van ionen.

Info

Publication number
NL7611983A
NL7611983A NL7611983A NL7611983A NL7611983A NL 7611983 A NL7611983 A NL 7611983A NL 7611983 A NL7611983 A NL 7611983A NL 7611983 A NL7611983 A NL 7611983A NL 7611983 A NL7611983 A NL 7611983A
Authority
NL
Netherlands
Prior art keywords
inplanting
ions
procedure
Prior art date
Application number
NL7611983A
Other languages
English (en)
Dutch (nl)
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of NL7611983A publication Critical patent/NL7611983A/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H10D1/64—Variable-capacitance diodes, e.g. varactors 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/21—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically active species
    • H10P30/212—Through-implantation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/222—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the angle between the ion beam and the crystal planes or the main crystal surface
NL7611983A 1975-10-28 1976-10-28 Werkwijze voor de inplantatie van ionen. NL7611983A (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50129646A JPS5834931B2 (ja) 1975-10-28 1975-10-28 ハンドウタイヘノフジユンブツドウニユウホウ

Publications (1)

Publication Number Publication Date
NL7611983A true NL7611983A (nl) 1977-05-02

Family

ID=15014653

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7611983A NL7611983A (nl) 1975-10-28 1976-10-28 Werkwijze voor de inplantatie van ionen.

Country Status (4)

Country Link
JP (1) JPS5834931B2 (en:Method)
DE (1) DE2649134A1 (en:Method)
FR (1) FR2330143A1 (en:Method)
NL (1) NL7611983A (en:Method)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2351082A1 (fr) * 1976-05-11 1977-12-09 Rhone Poulenc Ind Procede de fabrication d'acide terephtalique a partir de terephtalate dipotassique, realisation en deux etages
DE2833319C2 (de) * 1978-07-29 1982-10-07 Philips Patentverwaltung Gmbh, 2000 Hamburg Kapazitätsdiode
JP2597976B2 (ja) * 1985-03-27 1997-04-09 株式会社東芝 半導体装置及びその製造方法
JPS61178268U (en:Method) * 1985-04-24 1986-11-07
JPH0831428B2 (ja) * 1985-06-20 1996-03-27 住友電気工業株式会社 結晶へのイオン注入方法
US4790890A (en) * 1987-12-03 1988-12-13 Ireco Incorporated Packaged emulsion explosives and methods of manufacture thereof
JPH04343479A (ja) * 1991-05-21 1992-11-30 Nec Yamagata Ltd 可変容量ダイオード
EP1139434A3 (en) 2000-03-29 2003-12-10 Tyco Electronics Corporation Variable capacity diode with hyperabrubt junction profile

Also Published As

Publication number Publication date
FR2330143B3 (en:Method) 1979-07-13
DE2649134A1 (de) 1977-05-12
JPS5253658A (en) 1977-04-30
JPS5834931B2 (ja) 1983-07-29
FR2330143A1 (fr) 1977-05-27

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Legal Events

Date Code Title Description
BA A request for search or an international-type search has been filed
A85 Still pending on 85-01-01
BB A search report has been drawn up
BC A request for examination has been filed
BV The patent application has lapsed