NL7410799A - Veldeffecttransistor met een resistieve afvoer. - Google Patents

Veldeffecttransistor met een resistieve afvoer.

Info

Publication number
NL7410799A
NL7410799A NL7410799A NL7410799A NL7410799A NL 7410799 A NL7410799 A NL 7410799A NL 7410799 A NL7410799 A NL 7410799A NL 7410799 A NL7410799 A NL 7410799A NL 7410799 A NL7410799 A NL 7410799A
Authority
NL
Netherlands
Prior art keywords
field effect
effect transistor
resistive drain
resistive
drain
Prior art date
Application number
NL7410799A
Other languages
English (en)
Dutch (nl)
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of NL7410799A publication Critical patent/NL7410799A/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843Source or drain regions of field-effect devices
    • H01L29/0847Source or drain regions of field-effect devices of field-effect transistors with insulated gate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03GCONTROL OF AMPLIFICATION
    • H03G1/00Details of arrangements for controlling amplification
    • H03G1/0005Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
    • H03G1/0035Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal using continuously variable impedance elements
    • H03G1/007Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal using continuously variable impedance elements using FET type devices
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H11/00Networks using active elements
    • H03H11/02Multiple-port networks
    • H03H11/24Frequency-independent attenuators
    • H03H11/245Frequency-independent attenuators using field-effect transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Networks Using Active Elements (AREA)
NL7410799A 1973-08-11 1974-08-12 Veldeffecttransistor met een resistieve afvoer. NL7410799A (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9024073A JPS563675B2 (de) 1973-08-11 1973-08-11

Publications (1)

Publication Number Publication Date
NL7410799A true NL7410799A (nl) 1975-02-13

Family

ID=13992957

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7410799A NL7410799A (nl) 1973-08-11 1974-08-12 Veldeffecttransistor met een resistieve afvoer.

Country Status (7)

Country Link
JP (1) JPS563675B2 (de)
CA (1) CA1016665A (de)
DE (1) DE2438693A1 (de)
FR (1) FR2240531B1 (de)
GB (1) GB1481724A (de)
IT (1) IT1019875B (de)
NL (1) NL7410799A (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5230183A (en) * 1975-09-02 1977-03-07 Matsushita Electric Ind Co Ltd Mos semiconductor device and process for producing it
GB1546672A (en) * 1975-07-03 1979-05-31 Sony Corp Signal compression and expansion circuits
NL7606483A (nl) * 1976-06-16 1977-12-20 Philips Nv Inrichting voor het mengen van signalen.
JPS5396768A (en) * 1977-02-04 1978-08-24 Nippon Telegr & Teleph Corp <Ntt> High resistance gate mis semiconductor

Also Published As

Publication number Publication date
GB1481724A (en) 1977-08-03
IT1019875B (it) 1977-11-30
JPS5039878A (de) 1975-04-12
DE2438693A1 (de) 1975-02-20
CA1016665A (en) 1977-08-30
FR2240531A1 (de) 1975-03-07
FR2240531B1 (de) 1979-08-03
JPS563675B2 (de) 1981-01-26

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Legal Events

Date Code Title Description
BV The patent application has lapsed