NL7409821A - Werkwijze ter vervaardiging van geel licht gevende galliumfosfidedioden, alsmede voort- brengsels, verkregen volgens deze werkwijze. - Google Patents

Werkwijze ter vervaardiging van geel licht gevende galliumfosfidedioden, alsmede voort- brengsels, verkregen volgens deze werkwijze.

Info

Publication number
NL7409821A
NL7409821A NL7409821A NL7409821A NL7409821A NL 7409821 A NL7409821 A NL 7409821A NL 7409821 A NL7409821 A NL 7409821A NL 7409821 A NL7409821 A NL 7409821A NL 7409821 A NL7409821 A NL 7409821A
Authority
NL
Netherlands
Prior art keywords
manufacture
properties
well
gallium phosphide
lightening
Prior art date
Application number
NL7409821A
Other languages
English (en)
Dutch (nl)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19732338264 external-priority patent/DE2338264C3/de
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of NL7409821A publication Critical patent/NL7409821A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02543—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02581—Transition metal or rare earth elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02625—Liquid deposition using melted materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/906—Special atmosphere other than vacuum or inert

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Led Devices (AREA)
NL7409821A 1973-07-27 1974-07-19 Werkwijze ter vervaardiging van geel licht gevende galliumfosfidedioden, alsmede voort- brengsels, verkregen volgens deze werkwijze. NL7409821A (nl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19732338264 DE2338264C3 (de) 1973-07-27 Verfahren zur Herstellung von leuchtenden Galliumphosphid-Dioden
DE19732346198 DE2346198A1 (de) 1973-07-27 1973-09-13 Verfahren zur herstellung gelb leuchtender galliumphosphid-dioden

Publications (1)

Publication Number Publication Date
NL7409821A true NL7409821A (nl) 1975-01-29

Family

ID=25765559

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7409821A NL7409821A (nl) 1973-07-27 1974-07-19 Werkwijze ter vervaardiging van geel licht gevende galliumfosfidedioden, alsmede voort- brengsels, verkregen volgens deze werkwijze.

Country Status (8)

Country Link
US (1) US3948693A (xx)
AT (1) AT334431B (xx)
BE (1) BE818149A (xx)
DE (1) DE2346198A1 (xx)
FR (1) FR2239073B1 (xx)
GB (1) GB1442506A (xx)
LU (1) LU70616A1 (xx)
NL (1) NL7409821A (xx)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5596629A (en) * 1979-01-17 1980-07-23 Matsushita Electric Ind Co Ltd Method of epitaxially growing in liquid phase
US4227962A (en) * 1979-03-12 1980-10-14 Varian Associates, Inc. Prevention of decomposition of phosphorous containing substrates during an epitaxial growth sequence
DE4113143C2 (de) * 1991-04-23 1994-08-04 Forschungszentrum Juelich Gmbh Verfahren zur Herstellung eines Schichtsystems und Schichtsystem
CN1142598C (zh) 1997-07-25 2004-03-17 日亚化学工业株式会社 氮化物半导体发光器件
JP3770014B2 (ja) 1999-02-09 2006-04-26 日亜化学工業株式会社 窒化物半導体素子
KR100683877B1 (ko) * 1999-03-04 2007-02-15 니치아 카가쿠 고교 가부시키가이샤 질화물 반도체 레이저소자
TWI362769B (en) * 2008-05-09 2012-04-21 Univ Nat Chiao Tung Light emitting device and fabrication method therefor

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4831149B1 (xx) * 1969-03-18 1973-09-27
US3689330A (en) * 1969-04-18 1972-09-05 Sony Corp Method of making a luminescent diode
BE754437A (fr) * 1969-08-08 1971-01-18 Western Electric Co Dispositif electroluminescent ameliore
US3669767A (en) * 1969-08-21 1972-06-13 Bell Telephone Labor Inc Doping profile for gap diodes improved electroluminescent efficiency
US3603833A (en) * 1970-02-16 1971-09-07 Bell Telephone Labor Inc Electroluminescent junction semiconductor with controllable combination colors
JPS53271B1 (xx) * 1971-03-05 1978-01-06

Also Published As

Publication number Publication date
BE818149A (fr) 1974-11-18
DE2338264A1 (de) 1975-02-20
LU70616A1 (xx) 1974-12-10
ATA613574A (de) 1976-05-15
AT334431B (de) 1976-01-10
GB1442506A (en) 1976-07-14
FR2239073A1 (xx) 1975-02-21
US3948693A (en) 1976-04-06
DE2346198A1 (de) 1975-05-07
DE2338264B2 (de) 1976-10-21
FR2239073B1 (xx) 1980-01-04

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