ATA613574A - Verfahren zur herstellung gelb leuchtender galliumphosphid-dioden - Google Patents

Verfahren zur herstellung gelb leuchtender galliumphosphid-dioden

Info

Publication number
ATA613574A
ATA613574A AT613574A AT613574A ATA613574A AT A613574 A ATA613574 A AT A613574A AT 613574 A AT613574 A AT 613574A AT 613574 A AT613574 A AT 613574A AT A613574 A ATA613574 A AT A613574A
Authority
AT
Austria
Prior art keywords
galliumphosphide
diodes
yellow luminous
manufacturing yellow
manufacturing
Prior art date
Application number
AT613574A
Other languages
English (en)
Other versions
AT334431B (de
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19732338264 external-priority patent/DE2338264C3/de
Application filed by Siemens Ag filed Critical Siemens Ag
Application granted granted Critical
Publication of AT334431B publication Critical patent/AT334431B/de
Publication of ATA613574A publication Critical patent/ATA613574A/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10P14/263—
    • H10P14/265—
    • H10P14/3416—
    • H10P14/3418—
    • H10P14/3441—
    • H10P14/3446—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/906—Special atmosphere other than vacuum or inert
AT613574A 1973-07-27 1974-07-25 Verfahren zur herstellung gelb leuchtender galliumphosphid-dioden AT334431B (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19732338264 DE2338264C3 (de) 1973-07-27 Verfahren zur Herstellung von leuchtenden Galliumphosphid-Dioden
DE19732346198 DE2346198A1 (de) 1973-07-27 1973-09-13 Verfahren zur herstellung gelb leuchtender galliumphosphid-dioden

Publications (2)

Publication Number Publication Date
AT334431B AT334431B (de) 1976-01-10
ATA613574A true ATA613574A (de) 1976-05-15

Family

ID=25765559

Family Applications (1)

Application Number Title Priority Date Filing Date
AT613574A AT334431B (de) 1973-07-27 1974-07-25 Verfahren zur herstellung gelb leuchtender galliumphosphid-dioden

Country Status (8)

Country Link
US (1) US3948693A (de)
AT (1) AT334431B (de)
BE (1) BE818149A (de)
DE (1) DE2346198A1 (de)
FR (1) FR2239073B1 (de)
GB (1) GB1442506A (de)
LU (1) LU70616A1 (de)
NL (1) NL7409821A (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5596629A (en) * 1979-01-17 1980-07-23 Matsushita Electric Ind Co Ltd Method of epitaxially growing in liquid phase
US4227962A (en) * 1979-03-12 1980-10-14 Varian Associates, Inc. Prevention of decomposition of phosphorous containing substrates during an epitaxial growth sequence
DE4113143C2 (de) * 1991-04-23 1994-08-04 Forschungszentrum Juelich Gmbh Verfahren zur Herstellung eines Schichtsystems und Schichtsystem
US7365369B2 (en) 1997-06-11 2008-04-29 Nichia Corporation Nitride semiconductor device
JP3770014B2 (ja) 1999-02-09 2006-04-26 日亜化学工業株式会社 窒化物半導体素子
KR100683877B1 (ko) * 1999-03-04 2007-02-15 니치아 카가쿠 고교 가부시키가이샤 질화물 반도체 레이저소자
TWI362769B (en) * 2008-05-09 2012-04-21 Univ Nat Chiao Tung Light emitting device and fabrication method therefor

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4831149B1 (de) * 1969-03-18 1973-09-27
US3689330A (en) * 1969-04-18 1972-09-05 Sony Corp Method of making a luminescent diode
BE754437A (fr) * 1969-08-08 1971-01-18 Western Electric Co Dispositif electroluminescent ameliore
US3669767A (en) * 1969-08-21 1972-06-13 Bell Telephone Labor Inc Doping profile for gap diodes improved electroluminescent efficiency
US3603833A (en) * 1970-02-16 1971-09-07 Bell Telephone Labor Inc Electroluminescent junction semiconductor with controllable combination colors
JPS53271B1 (de) * 1971-03-05 1978-01-06

Also Published As

Publication number Publication date
GB1442506A (en) 1976-07-14
LU70616A1 (de) 1974-12-10
DE2346198A1 (de) 1975-05-07
FR2239073A1 (de) 1975-02-21
US3948693A (en) 1976-04-06
DE2338264B2 (de) 1976-10-21
FR2239073B1 (de) 1980-01-04
DE2338264A1 (de) 1975-02-20
BE818149A (fr) 1974-11-18
NL7409821A (nl) 1975-01-29
AT334431B (de) 1976-01-10

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