NL7407116A - - Google Patents
Info
- Publication number
- NL7407116A NL7407116A NL7407116A NL7407116A NL7407116A NL 7407116 A NL7407116 A NL 7407116A NL 7407116 A NL7407116 A NL 7407116A NL 7407116 A NL7407116 A NL 7407116A NL 7407116 A NL7407116 A NL 7407116A
- Authority
- NL
- Netherlands
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2301/00—Functional characteristics
- H01S2301/18—Semiconductor lasers with special structural design for influencing the near- or far-field
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/321—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures having intermediate bandgap layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US00364665A US3855607A (en) | 1973-05-29 | 1973-05-29 | Semiconductor injection laser with reduced divergence of emitted beam |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL7407116A true NL7407116A (de) | 1974-12-03 |
Family
ID=23435523
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL7407116A NL7407116A (de) | 1973-05-29 | 1974-05-28 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US3855607A (de) |
| JP (1) | JPS5022589A (de) |
| CA (1) | CA1013456A (de) |
| DE (1) | DE2425363A1 (de) |
| FR (1) | FR2232108A1 (de) |
| GB (1) | GB1458426A (de) |
| NL (1) | NL7407116A (de) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5751276B2 (de) * | 1973-10-23 | 1982-11-01 | ||
| US3938172A (en) * | 1974-05-22 | 1976-02-10 | Rca Corporation | Semiconductor injection laser |
| JPS5235999B2 (de) * | 1974-08-26 | 1977-09-12 | ||
| JPS5734671B2 (de) * | 1974-09-20 | 1982-07-24 | ||
| FR2299730A1 (fr) * | 1975-01-31 | 1976-08-27 | Thomson Csf | Diodes electroluminescentes et leur procede de fabrication |
| US3990101A (en) * | 1975-10-20 | 1976-11-02 | Rca Corporation | Solar cell device having two heterojunctions |
| US4063189A (en) * | 1976-04-08 | 1977-12-13 | Xerox Corporation | Leaky wave diode laser |
| US4235507A (en) * | 1977-09-16 | 1980-11-25 | Hitachi, Ltd. | Optical system to condense light from a semiconductor laser into a circular spot |
| US4160258A (en) * | 1977-11-18 | 1979-07-03 | Bell Telephone Laboratories, Incorporated | Optically coupled linear bilateral transistor |
| NL184715C (nl) * | 1978-09-20 | 1989-10-02 | Hitachi Ltd | Halfgeleiderlaserinrichting. |
| JPH01280368A (ja) * | 1988-05-06 | 1989-11-10 | Sharp Corp | 化合物半導体発光素子 |
| RO102871B1 (en) * | 1990-04-20 | 1993-08-16 | Inst De Fizica Si Tehnologia M | High power laser diode |
| US6996150B1 (en) | 1994-09-14 | 2006-02-07 | Rohm Co., Ltd. | Semiconductor light emitting device and manufacturing method therefor |
| JPH11163458A (ja) * | 1997-11-26 | 1999-06-18 | Mitsui Chem Inc | 半導体レーザ装置 |
| US6508960B1 (en) | 1999-07-26 | 2003-01-21 | The United States Of America As Represented By The Secretary Of The Air Force | Telluride quaternary nonlinear optic materials |
| US6304583B1 (en) | 1999-07-26 | 2001-10-16 | The United States Of America As Represented By The Secretary Of The Air Force | Utilization of telluride quaternary nonlinear optic materials |
| EP1919432B1 (de) * | 2005-08-11 | 2011-10-19 | Medimop Medical Projects Ltd. | Transfervorrichtungen für flüssige arzneimittel zur ausfallsicheren korrekten rastverbindung auf medizinischen ampullen |
| US7830938B2 (en) * | 2008-12-15 | 2010-11-09 | Jds Uniphase Corporation | Laser diode |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3758875A (en) * | 1970-05-01 | 1973-09-11 | Bell Telephone Labor Inc | Double heterostructure junction lasers |
| JPS502235B1 (de) * | 1970-09-07 | 1975-01-24 | ||
| GB1273284A (en) * | 1970-10-13 | 1972-05-03 | Standard Telephones Cables Ltd | Improvements in or relating to injection lasers |
| US3733561A (en) * | 1971-07-27 | 1973-05-15 | Bell Telephone Labor Inc | High power, fundamental transverse mode operation in double heterostructure lasers |
| US3747016A (en) * | 1971-08-26 | 1973-07-17 | Rca Corp | Semiconductor injection laser |
-
1973
- 1973-05-29 US US00364665A patent/US3855607A/en not_active Expired - Lifetime
-
1974
- 1974-05-14 GB GB2124574A patent/GB1458426A/en not_active Expired
- 1974-05-15 CA CA200,034A patent/CA1013456A/en not_active Expired
- 1974-05-25 DE DE19742425363 patent/DE2425363A1/de not_active Withdrawn
- 1974-05-28 NL NL7407116A patent/NL7407116A/xx not_active Application Discontinuation
- 1974-05-28 JP JP49060677A patent/JPS5022589A/ja active Pending
- 1974-05-29 FR FR7418545A patent/FR2232108A1/fr not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| GB1458426A (en) | 1976-12-15 |
| CA1013456A (en) | 1977-07-05 |
| US3855607A (en) | 1974-12-17 |
| DE2425363A1 (de) | 1975-01-02 |
| FR2232108A1 (de) | 1974-12-27 |
| JPS5022589A (de) | 1975-03-11 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| BA | A request for search or an international-type search has been filed | ||
| BA | A request for search or an international-type search has been filed | ||
| BB | A search report has been drawn up | ||
| BV | The patent application has lapsed |