NL7406301A - - Google Patents

Info

Publication number
NL7406301A
NL7406301A NL7406301A NL7406301A NL7406301A NL 7406301 A NL7406301 A NL 7406301A NL 7406301 A NL7406301 A NL 7406301A NL 7406301 A NL7406301 A NL 7406301A NL 7406301 A NL7406301 A NL 7406301A
Authority
NL
Netherlands
Application number
NL7406301A
Other versions
NL179927B (nl
NL179927C (nl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL7406301A publication Critical patent/NL7406301A/xx
Publication of NL179927B publication Critical patent/NL179927B/xx
Application granted granted Critical
Publication of NL179927C publication Critical patent/NL179927C/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/125—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/02—Zone-melting with a solvent, e.g. travelling solvent process
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/08—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone
    • C30B13/10—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials
    • C30B13/12—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials in the gaseous or vapour state
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
    • C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
NLAANVRAGE7406301,A 1973-05-11 1974-05-10 Werkwijze voor het vervaardigen van een eenkristal van gedoteerd cadmiumtelluride, alsmede halfgeleiderinrichting. NL179927C (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7317261A FR2228540B1 (cs) 1973-05-11 1973-05-11

Publications (3)

Publication Number Publication Date
NL7406301A true NL7406301A (cs) 1974-11-13
NL179927B NL179927B (nl) 1986-07-01
NL179927C NL179927C (nl) 1986-12-01

Family

ID=9119239

Family Applications (1)

Application Number Title Priority Date Filing Date
NLAANVRAGE7406301,A NL179927C (nl) 1973-05-11 1974-05-10 Werkwijze voor het vervaardigen van een eenkristal van gedoteerd cadmiumtelluride, alsmede halfgeleiderinrichting.

Country Status (6)

Country Link
BE (1) BE813808A (cs)
DE (1) DE2422251C2 (cs)
FR (1) FR2228540B1 (cs)
GB (1) GB1434437A (cs)
IT (1) IT1014137B (cs)
NL (1) NL179927C (cs)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2593196B1 (fr) * 1986-01-21 1988-04-15 Telecommunications Sa Procede de preparation d'un lingot cristallin de hg1-xo cdxo te
EP0261647A3 (en) * 1986-09-26 1989-08-16 Nippon Mining Company Limited High resistivity cdte crystal and process for producing the same
FR2629476B1 (fr) * 1988-04-01 1990-11-30 Telecommunications Sa Procede de preparation d'un lingot cristallin de hgcdte
FR2703696B1 (fr) * 1993-04-08 1995-06-09 Eurorad 2 6 Sarl Procede d'obtention d'un materiau cristallin dope a base de tellure et de cadmium et detecteur comportant un tel materiau.
CN109594124A (zh) * 2018-12-29 2019-04-09 珠海鼎泰芯源晶体有限公司 晶体生长的加热装置及生长装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1129789A (en) * 1966-03-26 1968-10-09 Matsushita Electronics Corp Process for producing cadmium telluride crystal

Also Published As

Publication number Publication date
NL179927B (nl) 1986-07-01
IT1014137B (it) 1977-04-20
DE2422251A1 (de) 1974-11-28
FR2228540B1 (cs) 1978-02-10
GB1434437A (en) 1976-05-05
FR2228540A1 (cs) 1974-12-06
DE2422251C2 (de) 1985-09-19
NL179927C (nl) 1986-12-01
BE813808A (fr) 1974-08-16

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Legal Events

Date Code Title Description
BC A request for examination has been filed
BA A request for search or an international-type search has been filed
BB A search report has been drawn up
BC A request for examination has been filed
A85 Still pending on 85-01-01
V1 Lapsed because of non-payment of the annual fee