NL7405683A - - Google Patents

Info

Publication number
NL7405683A
NL7405683A NL7405683A NL7405683A NL7405683A NL 7405683 A NL7405683 A NL 7405683A NL 7405683 A NL7405683 A NL 7405683A NL 7405683 A NL7405683 A NL 7405683A NL 7405683 A NL7405683 A NL 7405683A
Authority
NL
Netherlands
Application number
NL7405683A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL7405683A publication Critical patent/NL7405683A/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)
NL7405683A 1973-04-27 1974-04-26 NL7405683A (US20020095090A1-20020718-M00002.png)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19732321426 DE2321426C3 (de) 1973-04-27 1973-04-27 Bipolarer Dünnschicht-Transistor

Publications (1)

Publication Number Publication Date
NL7405683A true NL7405683A (US20020095090A1-20020718-M00002.png) 1974-10-29

Family

ID=5879480

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7405683A NL7405683A (US20020095090A1-20020718-M00002.png) 1973-04-27 1974-04-26

Country Status (12)

Country Link
JP (1) JPS5016480A (US20020095090A1-20020718-M00002.png)
AT (1) AT331860B (US20020095090A1-20020718-M00002.png)
BE (1) BE814252A (US20020095090A1-20020718-M00002.png)
CA (1) CA1007762A (US20020095090A1-20020718-M00002.png)
CH (1) CH567336A5 (US20020095090A1-20020718-M00002.png)
DE (1) DE2321426C3 (US20020095090A1-20020718-M00002.png)
DK (1) DK140818B (US20020095090A1-20020718-M00002.png)
FR (1) FR2227644B1 (US20020095090A1-20020718-M00002.png)
GB (1) GB1433667A (US20020095090A1-20020718-M00002.png)
IT (1) IT1010046B (US20020095090A1-20020718-M00002.png)
LU (1) LU69932A1 (US20020095090A1-20020718-M00002.png)
NL (1) NL7405683A (US20020095090A1-20020718-M00002.png)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5961159A (ja) * 1982-09-30 1984-04-07 Toshiba Corp 半導体装置及びその製造方法
FR2694449B1 (fr) * 1992-07-09 1994-10-28 France Telecom Composant électronique multifonctions, notamment élément à résistance dynamique négative, et procédé de fabrication correspondant.
EP0809293B1 (en) * 1996-05-21 2001-08-29 Co.Ri.M.Me. Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno Power semiconductor structure with lateral transistor driven by vertical transistor
JP5551790B2 (ja) * 2009-12-03 2014-07-16 エプコス アクチエンゲゼルシャフト 横方向のエミッタおよびコレクタを有するバイポーラトランジスタならびに製造方法

Also Published As

Publication number Publication date
AT331860B (de) 1976-08-25
GB1433667A (en) 1976-04-28
DE2321426A1 (de) 1974-11-07
JPS5016480A (US20020095090A1-20020718-M00002.png) 1975-02-21
DE2321426B2 (de) 1978-04-27
ATA264574A (de) 1975-12-15
DE2321426C3 (de) 1978-12-21
CA1007762A (en) 1977-03-29
FR2227644A1 (US20020095090A1-20020718-M00002.png) 1974-11-22
DK140818B (da) 1979-11-19
IT1010046B (it) 1977-01-10
DK140818C (US20020095090A1-20020718-M00002.png) 1980-04-28
BE814252A (fr) 1974-08-16
FR2227644B1 (US20020095090A1-20020718-M00002.png) 1977-10-28
CH567336A5 (US20020095090A1-20020718-M00002.png) 1975-09-30
LU69932A1 (US20020095090A1-20020718-M00002.png) 1974-08-06

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Legal Events

Date Code Title Description
BV The patent application has lapsed