NL7316145A - - Google Patents

Info

Publication number
NL7316145A
NL7316145A NL7316145A NL7316145A NL7316145A NL 7316145 A NL7316145 A NL 7316145A NL 7316145 A NL7316145 A NL 7316145A NL 7316145 A NL7316145 A NL 7316145A NL 7316145 A NL7316145 A NL 7316145A
Authority
NL
Netherlands
Application number
NL7316145A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL7316145A publication Critical patent/NL7316145A/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02Main electrodes
    • H01J1/34Photo-emissive cathodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02Manufacture of electrodes or electrode systems
    • H01J9/12Manufacture of electrodes or electrode systems of photo-emissive cathodes; of secondary-emission electrodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00Electrodes common to discharge tubes
    • H01J2201/34Photoemissive electrodes
    • H01J2201/342Cathodes
    • H01J2201/3421Composition of the emitting surface
    • H01J2201/3423Semiconductors, e.g. GaAs, NEA emitters
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/065Gp III-V generic compounds-processing
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/067Graded energy gap
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/072Heterojunctions
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/107Melt
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/12Photocathodes-Cs coated and solar cell

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Common Detailed Techniques For Electron Tubes Or Discharge Tubes (AREA)
NL7316145A 1972-11-27 1973-11-26 NL7316145A (US06826419-20041130-M00005.png)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US309756A US3914136A (en) 1972-11-27 1972-11-27 Method of making a transmission photocathode device

Publications (1)

Publication Number Publication Date
NL7316145A true NL7316145A (US06826419-20041130-M00005.png) 1974-05-29

Family

ID=23199555

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7316145A NL7316145A (US06826419-20041130-M00005.png) 1972-11-27 1973-11-26

Country Status (8)

Country Link
US (1) US3914136A (US06826419-20041130-M00005.png)
JP (1) JPS531142B2 (US06826419-20041130-M00005.png)
CA (1) CA998155A (US06826419-20041130-M00005.png)
DE (1) DE2359072C3 (US06826419-20041130-M00005.png)
FR (1) FR2208187B1 (US06826419-20041130-M00005.png)
GB (1) GB1452917A (US06826419-20041130-M00005.png)
IT (1) IT998785B (US06826419-20041130-M00005.png)
NL (1) NL7316145A (US06826419-20041130-M00005.png)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4015284A (en) * 1974-03-27 1977-03-29 Hamamatsu Terebi Kabushiki Kaisha Semiconductor photoelectron emission device
US3959045A (en) * 1974-11-18 1976-05-25 Varian Associates Process for making III-V devices
US3960620A (en) * 1975-04-21 1976-06-01 Rca Corporation Method of making a transmission mode semiconductor photocathode
US3972750A (en) * 1975-04-30 1976-08-03 The United States Of America As Represented By The Secretary Of The Army Electron emitter and method of fabrication
US3959038A (en) * 1975-04-30 1976-05-25 The United States Of America As Represented By The Secretary Of The Army Electron emitter and method of fabrication
US3959037A (en) * 1975-04-30 1976-05-25 The United States Of America As Represented By The Secretary Of The Army Electron emitter and method of fabrication
US4008106A (en) * 1975-11-13 1977-02-15 The United States Of America As Represented By The Secretary Of The Army Method of fabricating III-V photocathodes
US4000503A (en) * 1976-01-02 1976-12-28 International Audio Visual, Inc. Cold cathode for infrared image tube
US4107723A (en) * 1977-05-02 1978-08-15 Hughes Aircraft Company High bandgap window layer for GaAs solar cells and fabrication process therefor
DE2842492C2 (de) * 1978-09-29 1986-04-17 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zur Herstellung einer aus einem Halbleiter-Glas-Verbundwerkstoff bestehenden Photokathode
US4498225A (en) * 1981-05-06 1985-02-12 The United States Of America As Represented By The Secretary Of The Army Method of forming variable sensitivity transmission mode negative electron affinity photocathode
US4539687A (en) * 1982-12-27 1985-09-03 At&T Bell Laboratories Semiconductor laser CRT
US4906894A (en) * 1986-06-19 1990-03-06 Canon Kabushiki Kaisha Photoelectron beam converting device and method of driving the same
US4896035A (en) * 1987-08-06 1990-01-23 Phrasor Scientific, Inc. High mass ion detection system and method
US4830984A (en) * 1987-08-19 1989-05-16 Texas Instruments Incorporated Method for heteroepitaxial growth using tensioning layer on rear substrate surface
US4782028A (en) * 1987-08-27 1988-11-01 Santa Barbara Research Center Process methodology for two-sided fabrication of devices on thinned silicon
US4853595A (en) * 1987-08-31 1989-08-01 Alfano Robert R Photomultiplier tube having a transmission strip line photocathode and system for use therewith
US5404026A (en) * 1993-01-14 1995-04-04 Regents Of The University Of California Infrared-sensitive photocathode
US5506402A (en) * 1994-07-29 1996-04-09 Varo Inc. Transmission mode 1.06 μM photocathode for night vision having an indium gallium arsenide active layer and an aluminum gallium azsenide window layer
US6005257A (en) * 1995-09-13 1999-12-21 Litton Systems, Inc. Transmission mode photocathode with multilayer active layer for night vision and method
US5977705A (en) * 1996-04-29 1999-11-02 Litton Systems, Inc. Photocathode and image intensifier tube having an active layer comprised substantially of amorphic diamond-like carbon, diamond, or a combination of both
US6019913A (en) * 1998-05-18 2000-02-01 The Regents Of The University Of California Low work function, stable compound clusters and generation process
US7446474B2 (en) * 2002-10-10 2008-11-04 Applied Materials, Inc. Hetero-junction electron emitter with Group III nitride and activated alkali halide
US7015467B2 (en) * 2002-10-10 2006-03-21 Applied Materials, Inc. Generating electrons with an activated photocathode

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL279070A (US06826419-20041130-M00005.png) * 1959-06-18
US3478213A (en) * 1967-09-05 1969-11-11 Rca Corp Photomultiplier or image amplifier with secondary emission transmission type dynodes made of semiconductive material with low work function material disposed thereon
US3537029A (en) * 1968-06-10 1970-10-27 Rca Corp Semiconductor laser producing light at two wavelengths simultaneously
US3560275A (en) * 1968-11-08 1971-02-02 Rca Corp Fabricating semiconductor devices
US3565702A (en) * 1969-02-14 1971-02-23 Rca Corp Depositing successive epitaxial semiconductive layers from the liquid phase
JPS5141318B1 (US06826419-20041130-M00005.png) * 1969-04-01 1976-11-09
US3672992A (en) * 1969-07-30 1972-06-27 Gen Electric Method of forming group iii-v compound photoemitters having a high quantum efficiency and long wavelength response
US3622442A (en) * 1969-08-21 1971-11-23 Du Pont Non-woven fibrous webs bonded with cross-linked ethylene/carboxylic acid copolymers and methods of making same
GB1239893A (en) * 1970-03-05 1971-07-21 Standard Telephones Cables Ltd Improvements in or relating to photocathodes
US3770518A (en) * 1971-01-28 1973-11-06 Varian Associates Method of making gallium arsenide semiconductive devices
US3699401A (en) * 1971-05-17 1972-10-17 Rca Corp Photoemissive electron tube comprising a thin film transmissive semiconductor photocathode structure

Also Published As

Publication number Publication date
USB309756I5 (US06826419-20041130-M00005.png) 1975-01-28
FR2208187B1 (US06826419-20041130-M00005.png) 1978-06-16
DE2359072C3 (de) 1978-11-09
JPS4984575A (US06826419-20041130-M00005.png) 1974-08-14
DE2359072B2 (de) 1978-03-30
IT998785B (it) 1976-02-20
DE2359072A1 (de) 1974-06-06
CA998155A (en) 1976-10-05
FR2208187A1 (US06826419-20041130-M00005.png) 1974-06-21
JPS531142B2 (US06826419-20041130-M00005.png) 1978-01-14
US3914136A (en) 1975-10-21
GB1452917A (en) 1976-10-20

Similar Documents

Publication Publication Date Title
FR2207992A1 (US06826419-20041130-M00005.png)
JPS4881139A (US06826419-20041130-M00005.png)
FR2194645A1 (US06826419-20041130-M00005.png)
JPS5028670B2 (US06826419-20041130-M00005.png)
JPS5241841B2 (US06826419-20041130-M00005.png)
JPS4962526A (US06826419-20041130-M00005.png)
CS162799B2 (US06826419-20041130-M00005.png)
JPS5247607Y2 (US06826419-20041130-M00005.png)
JPS5322687B2 (US06826419-20041130-M00005.png)
JPS4941203A (US06826419-20041130-M00005.png)
JPS4895102U (US06826419-20041130-M00005.png)
JPS5527928Y2 (US06826419-20041130-M00005.png)
FR2185195A5 (US06826419-20041130-M00005.png)
CS161650B1 (US06826419-20041130-M00005.png)
CS154521B1 (US06826419-20041130-M00005.png)
JPS4932218U (US06826419-20041130-M00005.png)
JPS4988024A (US06826419-20041130-M00005.png)
CS153302B1 (US06826419-20041130-M00005.png)
JPS494063U (US06826419-20041130-M00005.png)
CS157286B1 (US06826419-20041130-M00005.png)
CS157351B1 (US06826419-20041130-M00005.png)
CS157372B1 (US06826419-20041130-M00005.png)
CS157575B1 (US06826419-20041130-M00005.png)
CS161677B2 (US06826419-20041130-M00005.png)
CS157993B1 (US06826419-20041130-M00005.png)

Legal Events

Date Code Title Description
BV The patent application has lapsed