NL7314576A - - Google Patents
Info
- Publication number
- NL7314576A NL7314576A NL7314576A NL7314576A NL7314576A NL 7314576 A NL7314576 A NL 7314576A NL 7314576 A NL7314576 A NL 7314576A NL 7314576 A NL7314576 A NL 7314576A NL 7314576 A NL7314576 A NL 7314576A
- Authority
- NL
- Netherlands
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/32—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/106—Masks, special
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/141—Self-alignment coat gate
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP47107222A JPS5910073B2 (ja) | 1972-10-27 | 1972-10-27 | シリコン・ゲ−トmos型半導体装置の製造方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
NL7314576A true NL7314576A (ja) | 1974-05-01 |
NL179434B NL179434B (nl) | 1986-04-01 |
NL179434C NL179434C (nl) | 1986-09-01 |
Family
ID=14453572
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NLAANVRAGE7314576,A NL179434C (nl) | 1972-10-27 | 1973-10-23 | Werkwijze voor het vervaardigen van een halfgeleiderinrichting, omvattende een halfgeleiderlichaam met een door een dunne isolerende laag van het halfgeleiderlichaam gescheiden geleidende stuurelektrode. |
Country Status (10)
Country | Link |
---|---|
US (1) | US3906620A (ja) |
JP (1) | JPS5910073B2 (ja) |
CA (1) | CA1032659A (ja) |
DE (1) | DE2352331A1 (ja) |
FR (1) | FR2204892B1 (ja) |
GB (1) | GB1428713A (ja) |
HK (1) | HK30179A (ja) |
IT (1) | IT998866B (ja) |
MY (1) | MY7900036A (ja) |
NL (1) | NL179434C (ja) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2554450A1 (de) * | 1975-12-03 | 1977-06-16 | Siemens Ag | Verfahren zur herstellung einer integrierten schaltung |
JPS5293278A (en) * | 1976-01-30 | 1977-08-05 | Matsushita Electronics Corp | Manufacture for mos type semiconductor intergrated circuit |
DE2858815C2 (de) * | 1977-01-26 | 1996-01-18 | Sgs Thomson Microelectronics | Verfahren zur Ausbildung eines Feldeffekttransistors in einer Halbleitervorrichtung |
IT1089299B (it) * | 1977-01-26 | 1985-06-18 | Mostek Corp | Procedimento per fabbricare un dispositivo semiconduttore |
US4553314B1 (en) * | 1977-01-26 | 2000-04-18 | Sgs Thomson Microelectronics | Method for making a semiconductor device |
US4259779A (en) * | 1977-08-24 | 1981-04-07 | Rca Corporation | Method of making radiation resistant MOS transistor |
US4240196A (en) * | 1978-12-29 | 1980-12-23 | Bell Telephone Laboratories, Incorporated | Fabrication of two-level polysilicon devices |
DE2902665A1 (de) * | 1979-01-24 | 1980-08-07 | Siemens Ag | Verfahren zum herstellen von integrierten mos-schaltungen in silizium-gate- technologie |
US4287661A (en) * | 1980-03-26 | 1981-09-08 | International Business Machines Corporation | Method for making an improved polysilicon conductor structure utilizing reactive-ion etching and thermal oxidation |
US4667395A (en) * | 1985-03-29 | 1987-05-26 | International Business Machines Corporation | Method for passivating an undercut in semiconductor device preparation |
JPH01235254A (ja) * | 1988-03-15 | 1989-09-20 | Nec Corp | 半導体装置及びその製造方法 |
US5550069A (en) * | 1990-06-23 | 1996-08-27 | El Mos Electronik In Mos Technologie Gmbh | Method for producing a PMOS transistor |
US6780718B2 (en) * | 1993-11-30 | 2004-08-24 | Stmicroelectronics, Inc. | Transistor structure and method for making same |
KR970003837B1 (en) * | 1993-12-16 | 1997-03-22 | Lg Semicon Co Ltd | Fabrication of mosfet |
JP2001291861A (ja) * | 2000-04-05 | 2001-10-19 | Nec Corp | Mosトランジスタ、トランジスタ製造方法 |
US8435873B2 (en) * | 2006-06-08 | 2013-05-07 | Texas Instruments Incorporated | Unguarded Schottky barrier diodes with dielectric underetch at silicide interface |
KR101163224B1 (ko) * | 2011-02-15 | 2012-07-06 | 에스케이하이닉스 주식회사 | 듀얼 폴리게이트 형성방법 및 이를 이용한 반도체소자의 제조방법 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB967002A (en) * | 1961-05-05 | 1964-08-19 | Standard Telephones Cables Ltd | Improvements in or relating to semiconductor devices |
NL131898C (ja) * | 1965-03-26 | |||
NL6617141A (ja) * | 1966-02-11 | 1967-08-14 | Siemens Ag | |
US3764865A (en) * | 1970-03-17 | 1973-10-09 | Rca Corp | Semiconductor devices having closely spaced contacts |
US3798752A (en) * | 1971-03-11 | 1974-03-26 | Nippon Electric Co | Method of producing a silicon gate insulated-gate field effect transistor |
CA910506A (en) * | 1971-06-25 | 1972-09-19 | Bell Canada-Northern Electric Research Limited | Modification of channel regions in insulated gate field effect transistors |
US3775191A (en) * | 1971-06-28 | 1973-11-27 | Bell Canada Northern Electric | Modification of channel regions in insulated gate field effect transistors |
JPS5340762B2 (ja) * | 1974-07-22 | 1978-10-28 |
-
1972
- 1972-10-27 JP JP47107222A patent/JPS5910073B2/ja not_active Expired
-
1973
- 1973-10-04 FR FR7335486A patent/FR2204892B1/fr not_active Expired
- 1973-10-18 DE DE19732352331 patent/DE2352331A1/de not_active Withdrawn
- 1973-10-18 GB GB4869573A patent/GB1428713A/en not_active Expired
- 1973-10-23 NL NLAANVRAGE7314576,A patent/NL179434C/xx not_active IP Right Cessation
- 1973-10-23 IT IT30438/73A patent/IT998866B/it active
- 1973-10-26 CA CA184,345A patent/CA1032659A/en not_active Expired
- 1973-10-29 US US410445A patent/US3906620A/en not_active Expired - Lifetime
-
1979
- 1979-05-10 HK HK301/79A patent/HK30179A/xx unknown
- 1979-12-30 MY MY36/79A patent/MY7900036A/xx unknown
Also Published As
Publication number | Publication date |
---|---|
MY7900036A (en) | 1979-12-31 |
NL179434B (nl) | 1986-04-01 |
CA1032659A (en) | 1978-06-06 |
DE2352331A1 (de) | 1974-05-16 |
JPS5910073B2 (ja) | 1984-03-06 |
US3906620A (en) | 1975-09-23 |
GB1428713A (en) | 1976-03-17 |
FR2204892A1 (ja) | 1974-05-24 |
FR2204892B1 (ja) | 1976-10-01 |
JPS4966074A (ja) | 1974-06-26 |
HK30179A (en) | 1979-05-18 |
IT998866B (it) | 1976-02-20 |
NL179434C (nl) | 1986-09-01 |
Similar Documents
Legal Events
Date | Code | Title | Description |
---|---|---|---|
BC | A request for examination has been filed | ||
A85 | Still pending on 85-01-01 | ||
V4 | Discontinued because of reaching the maximum lifetime of a patent |