NL7313457A - - Google Patents

Info

Publication number
NL7313457A
NL7313457A NL7313457A NL7313457A NL7313457A NL 7313457 A NL7313457 A NL 7313457A NL 7313457 A NL7313457 A NL 7313457A NL 7313457 A NL7313457 A NL 7313457A NL 7313457 A NL7313457 A NL 7313457A
Authority
NL
Netherlands
Application number
NL7313457A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL7313457A publication Critical patent/NL7313457A/xx

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/50Amplifiers in which input is applied to, or output is derived from, an impedance common to input and output circuits of the amplifying element, e.g. cathode follower
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H01L27/075Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
    • H01L27/0755Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/085Isolated-integrated
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/145Shaped junctions
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/151Simultaneous diffusion

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Element Separation (AREA)
NL7313457A 1972-10-04 1973-10-01 NL7313457A (no)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP9906172A JPS551704B2 (no) 1972-10-04 1972-10-04
US05/403,406 US3962718A (en) 1972-10-04 1973-10-04 Capacitance circuit
US05/596,764 US4025802A (en) 1972-10-04 1975-07-17 Capacitance circuit

Publications (1)

Publication Number Publication Date
NL7313457A true NL7313457A (no) 1974-04-08

Family

ID=27308850

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7313457A NL7313457A (no) 1972-10-04 1973-10-01

Country Status (6)

Country Link
US (2) US3962718A (no)
JP (1) JPS551704B2 (no)
DE (1) DE2349986A1 (no)
FR (1) FR2202371B1 (no)
GB (1) GB1450561A (no)
NL (1) NL7313457A (no)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4019152A (en) * 1975-08-25 1977-04-19 Rca Corporation Bias circuit for junction diodes
US4047217A (en) * 1976-04-12 1977-09-06 Fairchild Camera And Instrument Corporation High-gain, high-voltage transistor for linear integrated circuits
US4110775A (en) * 1976-08-23 1978-08-29 Festa Thomas A Schottky diode with voltage limiting guard band
DE2916114A1 (de) * 1978-04-21 1979-10-31 Hitachi Ltd Halbleitervorrichtung
JPS5676560A (en) * 1979-11-28 1981-06-24 Hitachi Ltd Semiconductor device
JPS5745283A (en) * 1980-08-29 1982-03-15 Nec Home Electronics Ltd Semiconductor device
JPS604250A (ja) * 1983-06-22 1985-01-10 Nec Corp 半導体集積回路装置
US4589002A (en) * 1984-07-18 1986-05-13 Rca Corporation Diode structure
DE3740302A1 (de) * 1987-11-27 1989-06-08 Telefunken Electronic Gmbh Integrierte schaltungsanordnung
DE3811947A1 (de) * 1988-04-11 1989-10-19 Telefunken Electronic Gmbh Steuerbare verstaerkerschaltung
GB2268328B (en) * 1992-06-30 1995-09-06 Texas Instruments Ltd A capacitor with electrostatic discharge protection
JPH07202224A (ja) * 1993-12-28 1995-08-04 Nec Corp 半導体装置
US5680173A (en) * 1995-06-23 1997-10-21 Thomson Consumer Electronics, Inc. Kinescope driver apparatus
GB2342191B (en) * 1998-10-01 2000-11-29 Metron Designs Ltd Improvements in zener diode reference voltage standards
JP5002899B2 (ja) * 2005-03-14 2012-08-15 富士電機株式会社 サージ電圧保護ダイオード
FR2953062B1 (fr) * 2009-11-24 2011-12-16 St Microelectronics Tours Sas Diode de protection bidirectionnelle basse tension
FR3146208A1 (fr) 2023-02-23 2024-08-30 Commissariat à l'énergie atomique et aux énergies alternatives Procédé de mesure par T-SAXS d’un défaut de recouvrement affectant un motif de contrôle porté par un composant microélectronique ; système instrumental et produit programme d’ordinateur associés.

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3118302A (en) * 1964-01-21 Fuel consumption indicator
US2964655A (en) * 1958-06-04 1960-12-13 Bell Telephone Labor Inc Transistor trigger circuit stabilization
US3402303A (en) * 1964-08-17 1968-09-17 Rca Corp Level sensitive switching circuit utilizing a zener diode for determining switching points and switching sensitivity
JPS4418900Y1 (no) * 1966-08-12 1969-08-14
DE1764398B1 (de) * 1968-05-30 1971-02-04 Itt Ind Gmbh Deutsche Sperrschichtkondensator
DE1764556C3 (de) * 1968-06-26 1979-01-04 Deutsche Itt Industries Gmbh, 7800 Freiburg Verfahren zur Herstellung eines Sperrschichtkondensatorelements und danach hergestellte Sperrschichtkondensatorelemente
FR1583248A (no) * 1968-06-27 1969-10-24
US3723830A (en) * 1970-10-14 1973-03-27 Motorola Inc Low current, now noise avalanche diode

Also Published As

Publication number Publication date
GB1450561A (en) 1976-09-22
DE2349986A1 (de) 1974-05-02
FR2202371B1 (no) 1978-01-06
US4025802A (en) 1977-05-24
JPS551704B2 (no) 1980-01-16
JPS4958726A (no) 1974-06-07
US3962718A (en) 1976-06-08
FR2202371A1 (no) 1974-05-03

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